Wet strip process for an antireflective coating layer

Patent metadata

Field	Value
Publication number	US-9460934-B2
Application number	US-201313833317-A
Country	US
Kind code	B2
Filing date	Mar 15, 2013
Priority date	Mar 15, 2013
Publication date	Oct 4, 2016
Grant date	Oct 4, 2016

Abstract

An silicon-containing antireflective coating (SiARC) material is applied on a substrate. The SiARC material which includes a base polymer and may include a boron silicate polymer including silsesquioxane. An etch sequence is utilized, which includes a first wet etch employing a basic solution, a second wet etch employing an acidic solution, and a third wet etch employing another basic solution. The first wet etch can be employed to break up the boron silicate polymer, and the second wet etch can remove the base polymer material, and the third wet etch can remove the residual boron silicate polymer and other residual materials. The SiARC material can be removed from a substrate employing the etch sequence, and the substrate can be reused for monitoring purposes.

First claim

What is claimed is:

1. A method for removing a silicon-containing antireflective coating (SiARC) layer from a substrate, said method comprising:
forming a SiARC layer comprising a silicon-containing base polymer and a boron silicate polymer capable of modifying a surface property of said base polymer on a substrate;
treating said SiARC layer by a first wet etch employing a first basic solution that removes said boron silicate polymer;
treating said SiARC layer by a second wet etch employing an acidic solution that removes said silicon-containing base polymer; and
removing residual portions of said SiARC layer by a third wet etch employing a second basic solution.

2. The method of claim 1 , wherein said first basic solution comprises quaternary ammonium hydroxide.

3. The method of claim 2 , wherein said first basic solution includes:
N-methyl-2-pyrrolidone;
propylene glycol at a weight percentage in a range from 10% to 40%; and
tetramethylammonium hydroxide at a weight percentage in a range from 1% to 5%.

4. The method of claim 3 , wherein said first basic solution further includes water at a weight percentage in a range from 0.1% to 2%.

5. The method of claim 1 , wherein said acidic solution includes diluted hydrofluoric acid.

6. The method of claim 5 , wherein said diluted hydrofluoric acid includes hydrofluoric acid at a weight percentage in a range from 0.1% to 2.0%.

7. The method of claim 5 , wherein said acidic solution consists essentially of said diluted hydrofluoric acid.

8. The method of claim 2 , wherein said first basic solution comprises an aqueous tetramethylammonium hydroxide solution.

9. The method of claim 8 , wherein said aqueous tetramethylammonium hydroxide solution is 0.263N tetramethylammonium hydroxide solution.

10. The method of claim 1 , wherein said silicon-containing base polymer comprises one or more monomer units selected from the group consisting of:

wherein x ranges from approximately 1 to approximately 2, R 1 is a chromophore moiety, R 2 is a transparent moiety that is transparent to a wavelength of a patterning radiation selected from the group consisting of 193 nm and 157 nm, and R 3 is a reactive site for reaction with a crosslinking component.

11. The method of claim 10 , wherein said chromophore moiety contains unsaturated carbon-carbon bonds.

12. The method of claim 10 , wherein said reactive site is selected from the group consisting of hydroxyl groups, amino groups, imino groups, carboxylic acids, vinyl ethers, epoxides and mixtures thereof.

13. The method of claim 10 , wherein said boron silicate polymer comprises at least one monomer unit of:

where x ranges from approximately 1 to approximately 2, R 4 consists of an acid labile functionality linked to a hydrophilic group.

14. The method of claim 13 , wherein said acid labile functionality is selected from the group consisting of tertiary alkyl carbonates, tertiary alkyl esters, tertiary alkyl ethers, acetals and ketals.

15. The method of claim 13 , wherein said hydrophilic side group is selected from the group consisting of phenols, alcohols, carboxylic acids, amides, and sulfonamides.

16. The method of claim 13 , wherein a weight ratio of said polymer capable of modifying surface property of said base polymer to said base polymer is in a range from 0.5:100 to 20:100.

17. The method of claim 13 , wherein said boron silicate polymer further comprising at least one monomer unit of:
—BO 1.5 —.

18. The method of claim 10 , wherein said silicon-containing base polymer comprises monomer units including:
monomer units of a first type having a chemical composition of —SiO 2 —,
monomer units of a second type having a chemical composition of

and
monomer units of a third type having a chemical composition of

19. The method of claim 17 , wherein said boron silicate polymer includes:
monomer units of a first type having a chemical composition of —BO 1.5 —,
monomer units of a second type having a chemical composition of

and
monomer units of a third type having a chemical composition of

20. The method of claim 19 , wherein said monomer units of said first type has a mole percentage greater than 40% of said boron silicate polymer.

Assignees

• Globalfoundries Inc
• Shin-Etsu Chemical Company Ltd

Inventors

• Glodde Martin
• Huang Wu-Song
• Perez Javier J
• Kinsho Takeshi
• Ogihara Tsutomu
• Tachibana Seiichiro
• Watanabe Takeru

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P50/283 Primary

  by chemical means · CPC title

• H01L21/31111 Primary

  Electricity · mapped topic

• H01L21/0276

  Electricity · mapped topic

• G03F7/0752

  in non photosensitive layers or as additives, e.g. for dry lithography · CPC title