High temperature atomic layer deposition of silicon oxide thin films

Patent metadata

Field	Value
Publication number	US-9460912-B2
Application number	US-201313857507-A
Country	US
Kind code	B2
Filing date	Apr 5, 2013
Priority date	Apr 12, 2012
Publication date	Oct 4, 2016
Grant date	Oct 4, 2016

Abstract

Composition(s) and atomic layer deposition (ALD) process(es) for the formation of a silicon oxide containing film at one or more deposition temperature of about 500° C. is disclosed. In one aspect, the composition and process use one or more silicon precursors selected from compounds having the following formulae I, II, described and combinations thereof

R 1 R 2 m Si(NR 3 R 4 ) n X p ; and  I.

R 1 R 2 m Si(OR 3 ) n (OR 4 ) q X p .  II

First claim

The invention claimed is:

1. A process to deposit silicon oxide, the process comprising the steps of:
a) providing a substrate in a reactor;
b) introducing into the reactor at least one silicon precursor comprising at least one anchoring functionality and a passivating functionality, wherein the at least one silicon precursor is at least one selected from the group consisting of diethylaminotrimethylsilane, dimethylaminotrimethylsilane, dimethylaminodimethylphenylsilane, diethylaminodimethylphenylsilane, ethylmethylaminotrimethylsilane, t-butylaminotrimethylsilane, iso-propylaminotrimethylsilane, di-isopropylaminotrimethylsilane, pyrrolidinotrimethylsilane, bis(diethylamino)dimethylsilane, bis(dimethylamino)dimethylsilane, bis(ethylmethylamino)dimethylsilane, bis(di-isopropylamino)dimethylsilane, bis(iso-propylamino)dimethylsilane, bis(tert-butylamino)dimethylsilane, bis(pyrrolidino)dimethylsilane bis(diethylamino)methylvinylsilane, bis(dimethylamino)methylvinylsilane, bis(ethylmethylamino)methylvinylsilane, bis(di-isopropylamino)methylvinylsilane, bis(iso-propylamino)methylvinylsilane, bis(tert-butylamino)methylvinylsilane, bis(pyrrolidino)methylvinylsilane, 2,6-dimethylpiperidinotrimethylsilane, tris(dimethylamino)chlorosilane, tris(dimethylamino)phenylsilane, tris(dimethylamino)methylsilane, methylaminotrimethylsilane, ethylaminotrimethylsilane, iso-propylaminotrimethylsilane, normal-propylaminotrimethylsilane, iso-butylaminotrimethylsilane, sec-butylaminotrimethylsilane, normal-butylaminotrimethylsilane, cyclohexylaminotrimethylsilane, 2-methylpyrrolidinotrimethylsilane, 2,5-dimethylpyrrolidinotrimethylsilane, piperidinotrimethylsilane, 1-methylpiperazinotrimethylsilane, pyrrolyltrimethylsilane, 2,5-dimethylpyrrolyltrimethylsilane, and imidazolyltrimethylsilane;
c) purging the reactor with purge gas;
d) introducing an oxygen source into the reactor, wherein the oxygen source is selected from the group consisting of water, oxygen (O 2 ), oxygen plasma, ozone (O 3 ), nitrous oxide (N 2 O), nitrogen dioxide (NO 2 ) carbon monoxide (CO), carbon dioxide (CO 2 ), and combinations thereof;
e) purging the reactor with purge gas; and
repeating steps b) through e) until a desired thickness is deposited,
wherein process temperature ranges from over 600 to 800° C. and pressure ranges from 50 milliTorr (mTorr) to 760 Torr.

2. The process of claim 1 , wherein the purge gas is selected from the group consisting of nitrogen, helium and argon.

3. The process of claim 1 , wherein the oxygen plasma is generated either in situ or remotely.

4. The process of claim 1 , wherein the process temperature ranges from 600 to 800° C.

5. The process of claim 1 wherein the at least one silicon precursor is selected from the group consisting of diethylaminotrimethylsilane, dimethylaminotrimethylsilane, dimethylaminodimethylphenylsilane, pyrrolyltrimethylsilane, pyrrolidinotrimethylsilane tris(dimethylamino)chlorosilane, tris(dimethylamino)phenylsilane, tris(dimethylamino)methylsilane, and bis(dimethylamino)dimethylsilane.

6. The process of claim 5 wherein the at least one silicon precursor is selected from the group consisting of diethylaminotrimethylsilane.

7. The process of claim 5 wherein the at least one silicon precursor is selected from the group consisting of dimethylaminotrimethylsilane.

8. The process of claim 5 wherein the at least one silicon precursor is selected from the group consisting of dimethylaminodimethylphenylsilane.

9. The process of claim 5 wherein the at least one silicon precursor is selected from the group consisting of bis(dimethylamino)dimethylsilane.

10. The process of claim 5 wherein the at least one silicon precursor is selected from the group consisting of pyrrolyltrimethylsilane.

11. The process of claim 5 wherein the at least one silicon precursor is selected from the group consisting of pyrrolidinotrimethylsilane.

12. The process of claim 5 wherein the at least one silicon precursor is selected from the group consisting of tris(dimethylamino)chlorosilane.

13. The process of claim 5 wherein the at least one silicon precursor is selected from the group consisting of tris(dimethylamino)methylsilane.

Assignees

• Air Prod & Chem

Inventors

• Chandra Haripin
• Wang Meiliang
• Xiao Manchao
• Lei Xinjian
• Pearlstein Ronald Martin
• O'Neill Mark Leonard
• Han Bing

Classifications

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/69215 Primary

  the material being a silicon oxide, e.g. SiO2 · CPC title

• C23C16/45527

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title

• C23C16/402

  Silicon dioxide · CPC title