Quantum computing device spin transfer torque magnetic memory

US9460397B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9460397-B2
Application numberUS-201414478877-A
CountryUS
Kind codeB2
Filing dateSep 5, 2014
Priority dateOct 4, 2013
Publication dateOct 4, 2016
Grant dateOct 4, 2016

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Abstract

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A quantum computing device magnetic memory is described. The quantum computing device magnetic memory is coupled with a quantum processor including at least one quantum device corresponding to at least one qubit. The quantum computing device magnetic memory includes magnetic storage cells coupled with the quantum device(s) and bit lines coupled to the magnetic storage cells. Each of the magnetic storage cells includes at least one magnetic junction. The magnetic junction(s) include a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The magnetic junction(s) are configured to allow the free layer to be switched between stable magnetic states. The magnetic junction(s) are configured such that the free layer has a nonzero initial writing spin transfer torque in an absence of thermal fluctuations.

First claim

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We claim: 1. A quantum computing device magnetic memory coupled with a quantum processor including at least one quantum device corresponding to at least one qubit, the quantum computing device magnetic memory comprising: a plurality of magnetic storage cells coupled with the at least one quantum device, each of the plurality of magnetic storage cells including at least one magnetic junction, the at least one magnetic junction including a reference layer, a nonmagnetic spacer layer…

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What does patent US9460397B2 cover?
A quantum computing device magnetic memory is described. The quantum computing device magnetic memory is coupled with a quantum processor including at least one quantum device corresponding to at least one qubit. The quantum computing device magnetic memory includes magnetic storage cells coupled with the quantum device(s) and bit lines coupled to the magnetic storage cells. Each of the magneti…
Who is the assignee on this patent?
Samsung Electronics Co Ltd
What technology area does this patent fall under?
Primary CPC classification G06N99/002. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Oct 04 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).