Photoresist overcoat compositions and methods of forming electronic devices

Patent metadata

Field	Value
Publication number	US-9458348-B2
Application number	US-201514938340-A
Country	US
Kind code	B2
Filing date	Nov 11, 2015
Priority date	Sep 9, 2011
Publication date	Oct 4, 2016
Grant date	Oct 4, 2016

Abstract

Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.

First claim

What is claimed is:

1. A photoresist overcoat composition, comprising:
a polymer comprising as polymerized units a monomer of the following general formula (I):

wherein: R 1 is chosen from hydrogen and substituted or unsubstituted C1 to C3 alkyl; R 2 is chosen from C4 to C8 alkyl; X is oxygen, sulfur or is represented by the formula NR 3 , wherein R 3 is chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl; and Z is a single bond or a spacer unit chosen from optionally substituted aliphatic and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking moiety chosen from —O—, —S—, —COO— and —CONR 4 — wherein R 4 is chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl;
wherein the polymer is free of silicon and fluorine;

an organic solvent; and
a basic quencher;
wherein the photoresist overcoat composition is free of acid generator compounds.

2. The photoresist overcoat composition of claim 1 , wherein the polymer contains as polymerized units a monomer of the following general formula (II):

wherein R 5 , R 6 , and R 7 independently represent hydrogen or a C 1 to C 3 alkyl, fluoroalkyl or fluoroalcohol group.

3. The photoresist overcoat composition of claim 2 , wherein Z is a single bond.

4. The photoresist overcoat composition of claim 1 , wherein the basic quencher is present in an amount of from 0.1 to 5 wt % based on the polymer.

5. A coated substrate, comprising a substrate, a photoresist layer over the substrate and a layer of the photoresist overcoat composition of claim 1 over the photoresist layer.

6. A method of forming an electronic device, comprising:
(a) providing a semiconductor substrate comprising one or more layers to be patterned;
(b) forming a photoresist layer over the one or more layers to be patterned;
(c) forming an overcoat layer over the photoresist layer from the overcoat composition of claim 1 ;
(d) exposing the overcoat-coated photoresist layer to actinic radiation; and
(e) developing the overcoat-coated photoresist layer with an organic solvent developer.

7. The method of claim 6 , wherein the organic solvent developer comprises 2-heptanone.

8. The method of claim 6 , wherein the organic solvent comprises n-butyl acetate.

9. The photoresist overcoat composition of claim 1 , wherein R 2 is linear.

10. The photoresist overcoat composition of claim 1 , wherein R 2 is branched.

11. The photoresist overcoat composition of claim 10 , wherein R 2 has a plurality of branch points.

12. A photoresist overcoat composition, comprising:
a polymer comprising as polymerized units a monomer of the following general formula (I):

wherein: R 1 is chosen from hydrogen and substituted or unsubstituted C1 to C3 alkyl; R 2 is chosen from substituted and unsubstituted C1 to C15 alkyl; X is oxygen, sulfur or is represented by the formula NR 3 , wherein R 3 is chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl; and Z is a single bond or a spacer unit chosen from optionally substituted aliphatic and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking moiety chosen from —O—, —S—, —COO— and —CONR 4 — wherein R 4 is chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl;
wherein the polymer is free of silicon and fluorine;

an organic solvent; and
a basic quencher chosen from linear and cyclic amides and derivatives thereof;
aromatic amines and cyclic aliphatic amines;

wherein the photoresist overcoat composition is free of acid generator compounds.

13. The photoresist overcoat composition of claim 12 , wherein R 2 is linear.

14. The photoresist overcoat composition of claim 12 , wherein R 2 is branched.

15. The photoresist overcoat composition of claim 14 , wherein R 2 has a plurality of branch points.

16. A photoresist overcoat composition, comprising:
a polymer comprising as polymerized units a monomer of the following general formula (I):

wherein: R 1 is chosen from hydrogen and substituted or unsubstituted C1 to C3 alkyl; R 2 is chosen from substituted and unsubstituted C1 to C15 alkyl; X is oxygen, sulfur or is represented by the formula NR 3 , wherein R 3 is chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl; and Z is a single bond or a spacer unit chosen from optionally substituted aliphatic and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking moiety chosen from —O—, —S—, —COO— and —CONR 4 — wherein R 4 is chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl;
wherein the polymer is free of silicon and fluorine;

an organic solvent;
an actinic or contrast dye; and
a basic quencher;
wherein the photoresist overcoat composition is free of acid generator compounds.

Assignees

• Rohm & Haas Elect Mat

Inventors

• Bae Young Cheol
• Bell Rosemary
• Park Jong Keun
• Lee Seung-Hyun

Classifications

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• C09D133/16 Primary

  Homopolymers or copolymers of esters containing halogen atoms · CPC title

• Y10S430/12

  Nitrogen compound containing · CPC title

• Y10S430/114

  Initiator containing · CPC title

• G03F7/2041

  in the presence of a fluid, e.g. immersion; using fluid cooling means · CPC title