Process and device for forming a graphene layer

Patent metadata

Field	Value
Publication number	US-9458020-B2
Application number	US-201313887424-A
Country	US
Kind code	B2
Filing date	May 6, 2013
Priority date	May 6, 2013
Publication date	Oct 4, 2016
Grant date	Oct 4, 2016

Abstract

The invention concerns a method of forming a graphene layer involving: heating a support layer in a reaction chamber; and forming the graphene layer on a surface of the support layer by: a) during a first time period, introducing into the reaction chamber an organic compound gas to cause a formation of carbon atoms on the surface; b) during a second time period after the first time period, reducing a rate of introduction of the organic compound gas into the reaction chamber and introducing into the reaction chamber a further gas, wherein the further gas is a carbon etching gas; and repeating a) and b) one or more times.

First claim

What is claimed is:

1. A method of forming a graphene layer comprising:
heating a support layer in a reaction chamber; and
forming said graphene layer on a surface of said support layer by:
a) during a first time period, introducing into said reaction chamber an organic compound gas to provide graphene growth by causing a formation of carbon atoms on said surface;
b) during a second time period after said first time period, reducing a rate of introduction of said organic compound gas into said reaction chamber and introducing into said reaction chamber a further gas, wherein said further gas is a carbon etching gas; and
repeating a) and b) one or more times.

2. The method of claim 1 , further comprising introducing said further gas into said reaction chamber during each of said first time periods.

3. The method of claim 2 , wherein said further gas is at least one of hydrogen and oxygen.

4. The method of claim 1 , wherein each of said second time periods has a duration at least one tenth of the duration of each of said first time periods.

5. The method of claim 1 , wherein each of said second time periods has a duration at least equal to the duration of each of said first time periods.

6. The method of claim 1 , wherein the duration of each of said first time periods is at least one second.

7. The method of claim 1 , wherein the duration of each of said second time periods is at least 1 second.

8. The method of claim 1 , wherein the dose of organic compound gas introduced into said reaction chamber during each of said first time periods is equal to between 0.1 and 100 Pa·s.

9. The method of claim 1 , wherein the dose of organic compound gas introduced into said reaction chamber during each of said second time periods is less than or equal to 0.01 Pa·s.

10. The method of claim 1 , wherein said support layer is a copper foil.

11. The method of claim 1 , wherein said organic compound gas is introduced into said reaction chamber at a rate of at least 1 sccm during said first time periods and at a rate of at most 0.1 sccm during said second time periods.

12. The method of claim 1 , wherein, during said second time periods, said organic compound gas is not introduced into said reaction chamber.

13. The method of claim 1 , wherein a) and b) are repeated throughout a growth period of said graphene layer of at least 10 seconds.

14. The method of claim 1 , further comprising additionally introducing an inert gas into said reaction chamber during said first and second time periods.

15. The method of claim 1 , wherein said organic compound gas is at least one of: methane, butane, ethylene and acetylene.

16. The method of claim 1 , wherein said graphene layer has between 1 and 10 layers of carbon atoms.

17. The method of claim 1 , wherein said graphene layer has a single layer of carbon atoms.

18. The method claim 1 , wherein the rate of introduction of said organic compound gas into said reaction chamber is at a first rate during one or more of said first time periods, and at a second rate lower than said first rate during one or more of said first time periods.

19. A non-transient computer readable medium storing a instructions that, when executed by a processor, controls a process of growing a graphene layer on a surface of a support layer by:
a) controlling, during a first time period, the introduction into said reaction chamber of an organic compound gas to provide graphene growth by causing a formation of carbon atoms on said surface;
b) controlling, during a second time period directly after said first time period, the reduction of the rate of introduction of said organic compound gas into said reaction chamber and the introduction into said reaction chamber of a further gas, wherein said further gas is a carbon etching gas; and
repeating a) and b) one or more times.

Assignees

• Centre Nat Rech Scient

Inventors

• Bouchiat Vincent
• Coraux Johann
• Han Zheng

Classifications

• C01B2204/22

  Electronic properties · CPC title

• C01B31/0453 Primary

  Chemistry & Metallurgy · mapped topic

• C01B2204/04

  Specific amount of layers or specific thickness · CPC title

• C01B2204/02

  Single layer graphene · CPC title

• C23C16/26

  Deposition of carbon only · CPC title