Silicon carbide porous material, honeycomb structure and electric heating-type catalyst carrier

Patent metadata

Field	Value
Publication number	US-9457345-B2
Application number	US-201414482446-A
Country	US
Kind code	B2
Filing date	Sep 10, 2014
Priority date	Mar 28, 2012
Publication date	Oct 4, 2016
Grant date	Oct 4, 2016

Abstract

There is disclosed a silicon carbide porous material having a high thermal shock resistance. The silicon carbide porous material of the present invention includes silicon carbide particles, metal silicon and an oxide phase, and the silicon carbide particles are bonded to one another via at least one of the metal silicon and the oxide phase. Furthermore, the oxide phase includes a parent phase, and a dispersion phase dispersed in the parent phase and having a higher thermal expansion coefficient than the parent phase. Here, a lower limit value of a content ratio of the dispersion phase in the oxide phase is preferably 1 mass %, and upper limit value of the content ratio of the dispersion phase in the oxide phase is 40 mass %. Furthermore, it is preferable that the parent phase is cordierite and that the dispersion phase is mullite.

First claim

The invention claimed is:

1. A silicon carbide porous material which includes silicon carbide particles, metal silicon and an oxide phase and in which the silicon carbide particles are bonded to one another via at least one of the metal silicon and the oxide phase,
wherein the oxide phase comprises a parent phase, and a dispersion phase dispersed in the parent phase and having a higher thermal expansion coefficient than the parent phase.

2. The silicon carbide porous material according to claim 1 ,
wherein a content ratio of the dispersion phase in the oxide phase has a lower limit value of 1 mass % and an upper limit value of 40 mass %.

3. The silicon carbide porous material according to claim 2 ,
wherein an average particle diameter of the dispersion phase has a lower limit value of 0.1 μm and an upper limit value of 5 μm.

4. The silicon carbide porous material according to claim 2 , wherein the dispersion phase is in the shape of a plate, a needle or a fiber.

5. The silicon carbide porous material according to claim 2 ,
wherein a content ratio of the silicon carbide particles has a lower limit value of 50 mass % and an upper limit value of 80 mass %, a content ratio of the metal silicon has a lower limit value of 15 mass % and an upper limit value of 45 mass %, and a content ratio of an oxide has a lower limit value of 1 mass % and an upper limit value of 25 mass %.

6. The silicon carbide porous material according to claim 2 ,
wherein the parent phase is an oxide including an alkaline earth metal, aluminum and silicon, and the dispersion phase is an oxide including one or more of an alkaline earth metal, aluminum and silicon.

7. The silicon carbide porous material according to claim 6 , wherein the parent phase is cordierite.

8. The silicon carbide porous material according to claim 7 , wherein the dispersion phase is mullite.

9. The silicon carbide porous material according to claim 8 ,
wherein an average particle diameter of the dispersion phase has a lower limit value of 0.1 μm and an upper limit value of 5 μm.

10. The silicon carbide porous material according to claim 8 ,
wherein the dispersion phase is in the shape of a plate, a needle or a fiber.

11. The silicon carbide porous material according to claim 8 ,
wherein a content ratio of the silicon carbide particles has a lower limit value of 50 mass % and an upper limit value of 80 mass %, a content ratio of the metal silicon has a lower limit value of 15 mass % and an upper limit value of 45 mass %, and a content ratio of an oxide has a lower limit value of 1 mass % and an upper limit value of 25 mass %.

12. The silicon carbide porous material according to claim 9 , wherein the dispersion phase is in the shape of a plate, a needle or a fiber.

13. The silicon carbide porous material according to claim 12 ,
wherein a content ratio of the silicon carbide particles has a lower limit value of 50 mass % and an upper limit value of 80 mass %, a content ratio of the metal silicon has a lower limit value of 15 mass % and an upper limit value of 45 mass %, and a content ratio of an oxide has a lower limit value of 1 mass % and an upper limit value of 25 mass %.

14. The silicon carbide porous material according to claim 1 ,
wherein the parent phase is an oxide including an alkaline earth metal, aluminum and silicon, and the dispersion phase is an oxide including one or more of an alkaline earth metal, aluminum and silicon.

15. The silicon carbide porous material according to claim 14 , wherein the parent phase is cordierite.

16. The silicon carbide porous material according to claim 15 , wherein the dispersion phase is mullite.

17. A honeycomb structure which is constituted of the silicon carbide porous material according to claim 1 .

18. An electric heating-type catalyst carrier in which the silicon carbide porous material according to claim 1 is utilized.

19. A honeycomb structure which is constituted of the silicon carbide porous material according to claim 16 .

20. An electric heating-type catalyst carrier in which the silicon carbide porous material according to claim 16 is utilized.

21. A silicon carbide porous material which includes silicon carbide particles, metal silicon and an oxide phase and in which the silicon carbide particles are bonded to one another via at least one of the metal silicon and the oxide phase,
wherein the oxide phase comprises a parent phase, and a dispersion phase dispersed in the parent phase and having a higher thermal expansion coefficient than the parent phase, and
wherein the parent phase is an oxide including an alkaline earth metal, aluminum and silicon, and the dispersion phase is selected from the group consisting of alumina, cristobalite, forsterite, mullite, sapphirine and spinel.

Assignees

• Ngk Insulators Ltd

Inventors

• Tomita Takahiro
• Matsushima Kiyoshi
• Inoue Katsuhiro
• Kobayashi Yoshimasa

Classifications

• B01J35/57

  Honeycombs · CPC title

• B01J27/224 Primary

  Silicon carbide · CPC title

• C04B2235/663

  Oxidative annealing · CPC title

• B01J35/04

  Operations & Transport · mapped topic

• C04B2235/3213

  Strontium oxides or oxide-forming salts thereof · CPC title