Magnetic tunnel junction for MRAM applications

Patent metadata

Field	Value
Publication number	US-9455400-B2
Application number	US-201514979949-A
Country	US
Kind code	B2
Filing date	Dec 28, 2015
Priority date	Jan 19, 2011
Publication date	Sep 27, 2016
Grant date	Sep 27, 2016

Abstract

A MTJ in an MRAM array is disclosed with a composite free layer having a lower crystalline layer contacting a tunnel barrier and an upper amorphous layer for improved bit switching performance. According to one embodiment, the amorphous layer has a NiFeM 1 /NiFeM 2 configuration where M 1 and M 2 are Mg, Hf, Zr, Nb, or Ta, and M1 is unequal to M2. The crystalline layer is Fe, Ni, or FeB with a thickness of at least 6 Angstroms that affords a high magnetoresistive ratio. The M 1 and M 2 elements in the NiFeM 1 and NiFeM 2 layers each have a content of 5 to 30 atomic %. The NiFeM 1 /NiFeM 2 configuration substantially reduces bit line switching current and number of shorted bits. In an alternative embodiment, the crystalline layer may be a Fe/NiFe bilayer. Annealing at 300° C. to 360° C. provides a high magnetoresistive ratio of about 150%.

First claim

We claim:

1. A MTJ element in a magnetic device, comprising:
(a) a synthetic anti-ferromagnetic (SyAF) pinned layer formed on a substrate;
(b) a tunnel barrier layer on the SyAF pinned layer; and
(c) a composite free layer on the tunnel barrier layer, comprising:
(1) a crystalline magnetic layer contacting a top surface of the tunnel barrier layer; and
(2) an amorphous bilayer contacting a top surface of the crystalline magnetic layer wherein said amorphous bilayer has a lower NiFeM 1 layer and an upper NiFeM 2 layer in which M 1 and M 2 are one of Hf, Zr, Nb, Ta, or Mg, and M 1 is unequal to M 2 .

2. The MTJ element of claim 1 wherein the amorphous bilayer has a thickness between about 20 and 40 Angstroms.

3. The MTJ element of claim 1 wherein the crystalline magnetic layer is comprised of Fe, Ni, or FeB Y where y is from 0 to about 5 atomic %.

4. The MTJ element of claim 1 wherein the crystalline magnetic layer has a Fe/NiFe configuration in which the Fe layer contacts the tunnel barrier layer, and the NiFe layer is formed between the Fe layer and the amorphous bilayer.

5. The MTJ element of claim 1 wherein each of the NiFeM 1 and NiFeM 2 layers has a composition wherein M 1 and M 2 , respectively, have a content from about 5 to 30 atomic %.

6. The MTJ element of claim 3 wherein the crystalline magnetic layer is Fe and said Fe layer has a thickness of at least 6 Angstroms.

Assignees

• Headway Tech Inc

Inventors

• Cao Wei
• Horng Cheng T
• Kula Witold
• Torng Chyu Jiuh

Classifications

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L43/10 Primary

  Electricity · mapped topic

• H01L43/02

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• H10N50/85 Primary

  Materials of the active region · CPC title