Integrated multi-color light emitting device made with hybrid crystal structure

Patent metadata

Field	Value
Publication number	US-9455374-B2
Application number	US-201414279614-A
Country	US
Kind code	B2
Filing date	May 16, 2014
Priority date	May 16, 2013
Publication date	Sep 27, 2016
Grant date	Sep 27, 2016

Abstract

An integrated hybrid crystal Light Emitting Diode (“LED”) display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

First claim

What is claimed is:

1. A double sided hybrid crystal and III-V/II-VI and III Nitride compound semiconductor device comprising:
a trigonal sapphire layer;
a hexagonal III-Nitride structure grown from a first side of the trigonal sapphire layer, wherein the hexagonal III-Nitride structure has a bandgap energy equal to that of a blue photon having a wavelength of 400-500 nm: and
a rhombohedral III-V or II-VI structure grown from a second side of the trigonal sapphire layer, wherein the rhombohedral III-V or II-VI structure has a bandgap energy equal to that of a red photon having a wavelength of 580-700 nm.

2. The device of claim 1 , wherein the trigonal sapphire layer is a (0001) c-plane sapphire layer.

3. The device of claim 2 , wherein the (0001) c-plane sapphire layer is selected from the group consisting of a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, and a crack-and-bonded c-plane sapphire layer on a substrate.

4. The device of claim 2 , wherein the hexagonal III-Nitride structure comprises at least a first p-type layer and at least a first n-type layer both comprised of AlGaN, InGaN, AlGaInN, AlN, InN or GaN; and
the rhombohedral III-V or II-VI structure comprises at least a second p-type layer and at least a second n-type layer comprised of AlGaP, InGaP, InAIP, AlGaInP, AlP, InP, GaP, AlGaAs, InGaAs, InAlAs, AlGaInAs, AlAs, InAs, GaAs, AlGaPAs, InGaPAs, InAlPAs, AlGaInPAs, AlPAs, InPAs, or GaPAs.

5. The device of claim. 4 , wherein the hexagonal III-Nitride structure further comprises at least a first intrinsic layer comprised of AlGaN, InGaN, AlGaInN, AlN, InN, or GaN separating the first p-type layer and the first n-type layer; and
the rhombohedral III-V or II-VI structure further comprises at least a second intrinsic layer comprised of AlGaP, InGaP, InAlP, AlGaInP, AlP, InP, GaP, AlGaAs, InGaAs, InAlAs, AlGaInAs, AlAs, InAs, GaAs, AlGaPAs, InGaPAs, InAlPAs, AlGaInPAs, AlPAs, InPAs, or GaPAs separating the second p-type layer and the second n-type layer.

6. The device of claim 5 , wherein the first n-type layer separates the first intrinsic layer and the (0001) c-plane sapphire layer; and
the second n-type layer separates the second intrinsic layer and the (0001) c-plane sapphire layer.

7. The device of claim 6 , wherein the hexagonal III-Nitride structure further comprises a third intrinsic layer formed on a side of the first p-type layer extending away from the (0001) c-plane sapphire layer and a third n-type layer formed on a side of the third intrinsic layer extending away from the first p-type layer.

8. The device of claim 7 , wherein:
the first intrinsic layer comprises a first intrinsic layer first portion and a first intrinsic layer second portion;
the first p-type layer comprises a first p-type layer first portion and a first p-type layer second portion;
the first intrinsic layer first portion, the first p-type layer first portion, the third intrinsic layer, the third n-type layer, and a first transparent electrode comprise a first column extending from the first n-type layer away from the (0001) c-plane sapphire layer;
the first intrinsic layer second portion, the first p-type layer second portion, and a second transparent electrode comprise a second column extending from the first n-type layer away from the (0001) c-plane sapphire layer and separate from the first column;
the first transparent electrode, the third n-type layer, the third intrinsic layer, and the first p-type layer first portion comprise a blue LED circuit;
the second transparent electrode, the first p-type layer second portion, the first intrinsic layer second portion, and the first n-type layer comprise a green LED circuit; and
the second is-type layer, the second intrinsic layer, the second p-type layer, and a metal electrode comprise a red LED circuit.

9. The device of claim 5 , wherein the first n-type layer separates the first intrinsic layer and the (0001) c-plane sapphire layer; and
the second p-type layer separates the second intrinsic layer and the (0001) c-plane sapphire layer.

10. The device of claim 9 , wherein the rhombohedral III-V or II-VI structure further comprises a third intrinsic layer formed on a side of the second n-type layer extending away from the (0001) c-plane sapphire layer and a third p-type layer formed on a side of the third intrinsic layer extending away from the second n-type layer.

11. The device of claim 10 , wherein:
the third p-type layer, the third intrinsic layer, and a first metal electrode comprise a column extending from the second n-type layer away from the (0001) c-plane sapphire layer;
a second metal electrode formed on a side of the second n-type layer away from the (0001) c-plane sapphire layer and separate from the column;
the first metal electrode, the third p-type layer, the third intrinsic layer, and the second n-type layer comprise a red LED circuit;
the second metal electrode, the second n-type layer, the second intrinsic layer, and the second p-type layer comprise a green LEE) circuit; and
the first n-type layer, the first intrinsic layer, the first p-type layer, and a transparent electrode comprise a blue LED circuit.

Assignees

• Nasa

Inventors

• Park Yeonjoon
• Choi Sang Hyouk

Classifications

• H10H29/10

  Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) · CPC title

• H10H20/01335

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/817

  characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous · CPC title

• H10H20/813 Primary

  having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies · CPC title

• H10H20/0133

  with a substrate not being Group III-V materials · CPC title