Method and apparatus for optical modulation

Patent metadata

Field	Value
Publication number	US-9455372-B2
Application number	US-201313743935-A
Country	US
Kind code	B2
Filing date	Jan 17, 2013
Priority date	Nov 9, 2006
Publication date	Sep 27, 2016
Grant date	Sep 27, 2016

Abstract

The present invention is a method and an apparatus for optical modulation, for example for use in optical communications links. In one embodiment, an apparatus for optical modulation includes a first silicon layer having one or more trenches formed therein, a dielectric layer lining the first silicon layer, and a second silicon layer disposed on the dielectric layer and filling the trenches.

First claim

The invention claimed is:

1. A method for modulating an optical signal, the method comprising:
providing a first silicon layer for guiding the optical signal;
providing a dielectric layer adjacent to the first silicon layer, the dielectric layer having a substantially serpentine shape along a cross section perpendicular to a direction of propagation of the optical signal; and
applying a voltage sufficient to produce a surface charge along the dielectric layer when the optical signal is propagating through the silicon layer.

2. The method of claim 1 , wherein the first silicon layer comprises crystalline silicon.

3. The method of claim 2 , wherein the first silicon layer silicon is n-doped.

4. The method of claim 1 , further comprising:
providing a second silicon layer adjacent to the dielectric layer, wherein a refractive index of the dielectric layer is less than or approximately equal to a refractive index of the second silicon layer.

5. The method of claim 1 , further comprising:
providing a second silicon layer adjacent to the dielectric layer, wherein the second silicon layer comprises crystalline silicon or polysilicon.

6. The method of claim 1 , further comprising:
providing a second silicon layer adjacent to the dielectric layer, wherein the second silicon layer is p-doped.

7. The method of claim 1 , further comprising:
lining the dielectric layer with a layer of p-doped silicon.

8. The method of claim 7 , further comprising:
providing a second silicon layer adjacent to the layer of p-doped silicon, wherein the second silicon layer comprises undoped silicon.

9. The method of claim 1 , wherein the surface charge overlaps with a region of the first silicon layer through which the optical signal propagates.

10. The method of claim 1 , further comprising:
providing a layer of p-doped silicon adjacent to the dielectric layer; and
providing a second silicon layer adjacent to the layer of p-doped silicon, wherein the layer of p-doped silicon is thinner than the second silicon layer.

11. The method of claim 10 , wherein the first silicon layer is disposed directly on a buried oxide layer.

12. The method of claim 11 , wherein the second silicon layer is separated from the buried oxide layer by the first silicon layer, the dielectric layer, and the layer of p-doped silicon.

13. The method of claim 1 , wherein the dielectric layer comprises a gate oxide.

14. The method of claim 13 , wherein the gate oxide comprises silicon dioxide.

15. The method of claim 1 , further comprising:
providing a second silicon layer adjacent to the dielectric layer;
providing a first oxide layer disposed laterally relative to a first side of the dielectric layer, such that the first oxide layer is positioned between the first silicon layer and the second silicon layer; and
providing a second oxide layer disposed laterally relative to a second side of the dielectric layer, such that the second oxide layer is positioned between the first silicon layer and the second silicon layer,
wherein the first oxide layer and the second oxide layer are spaced apart relative to each other by a section of the dielectric layer residing between the first side of the dielectric layer and the second side of the dielectric layer.

16. The method of claim 1 , wherein the dielectric layer is continuous through at least two trenches along the cross section perpendicular to the direction of propagation of the optical signal.

17. The method of claim 1 , wherein the first silicon layer is continuous through at least two trenches along the cross section perpendicular to the direction of propagation of the optical signal.

18. The method of claim 15 , wherein the dielectric layer is continuous through at least two trenches along the cross section perpendicular to the direction of propagation of the optical signal.

19. The method of claim 18 , wherein the first oxide layer is continuous over the at least two trenches along the cross section perpendicular to the direction of propagation of the optical signal.

20. A method for modulating an optical signal, the method comprising:
providing a first silicon layer for guiding the optical signal;
providing a dielectric layer adjacent to the silicon layer, wherein a cross section of the dielectric layer in a direction perpendicular to a direction of propagation of the optical signal through the first silicon layer comprises a substantially serpentine shape; and
applying a voltage sufficient to produce a uniform surface charge along an entirety of the dielectric layer when the optical signal is propagating through the silicon layer.

Assignees

• Globalfoundries Inc

Inventors

• Vlasov Yurii A
• Xia Fengnian

Classifications

• H10H20/014 Primary

  having light-emitting regions comprising only Group IV materials · CPC title

• G02F2202/103

  a-Si · CPC title

• G02F2202/104

  poly-Si · CPC title

• G02F1/01708

  in an optical wavequide structure · CPC title

• G02F1/011

  in optical waveguides, not otherwise provided for in this subclass · CPC title