Integrated structures

Patent metadata

Field	Value
Publication number	US-9455261-B1
Application number	US-201514796938-A
Country	US
Kind code	B1
Filing date	Jul 10, 2015
Priority date	Jul 10, 2015
Publication date	Sep 27, 2016
Grant date	Sep 27, 2016

Abstract

Some embodiments include an integrated structure having a stack of alternating dielectric levels and conductive levels, vertically-stacked memory cells within the conductive levels, an insulative material over the stack and a select gate material over the insulative material. An opening extends through the select gate material, through the insulative material, and through the stack of alternating dielectric and conductive levels. A first region of the opening within the insulative material is wider along a cross-section than a second region of the opening within the select gate material, and is wider along the cross-section than a third region of the opening within the stack of alternating dielectric levels and conductive levels. Channel material is within the opening and adjacent the insulative material, the select gate material and the memory cells. Some embodiments include methods of forming vertically-stacked memory cells.

First claim

We claim:

1. An integrated structure, comprising:
a stack of alternating dielectric levels and conductive levels;
vertically-stacked memory cells within the conductive levels;
an insulative material over the stack;
a select gate material over the insulative material;
an opening extending through the select gate material, through the insulative material, and through the stack of alternating dielectric levels and conductive levels; a first region of the opening within the insulative material being wider along a cross-section than a second region of the opening within the select gate material, and being wider along the cross-section than a third region of the opening within the stack of alternating dielectric levels and conductive levels; and
channel material within the opening and adjacent the insulative material, the select gate material and the memory cells;
cavities extending into the conductive levels;
charge-blocking dielectric and charge-storage structures within the cavities;
gate dielectric along the charge-storage structures; and
wherein the memory cells include the charge-blocking dielectric, charge-storage structures and gate dielectric.

2. The integrated structure of claim 1 wherein the insulative material comprises silicon dioxide.

3. The integrated structure of claim 1 wherein the select gate material is drain-side select gate material and comprises conductively-doped silicon.

4. The integrated structure of claim 1 wherein the second and third regions of the opening are about a same width as one another along the cross-section.

5. The integrated structure of claim 1 wherein the first region is wider than the second and third regions by an amount within a range of from about 3 nm to about 25 nm.

6. The integrated structure of claim 1 wherein the first region has a width along the cross-section within a range of from about 60 nm to about 75 nm.

7. The integrated structure of claim 6 wherein the second and third regions have widths along the cross-section within a range of from about 55 nm to about 65 nm.

8. The integrated structure of claim 1 wherein the conductive levels comprise conductively-doped silicon and the dielectric levels comprise silicon dioxide.

9. The integrated structure of claim 1 comprising silicon dioxide between the select gate material and the channel material.

10. The integrated structure of claim 1 wherein the insulative material is a third insulative material; wherein a first insulative material is over the stack, a second insulative material is over the first insulative material, and the third insulative material is over the second insulative material.

11. The integrated structure of claim 10 wherein the first, second and third insulative materials comprise silicon dioxide, silicon nitride and silicon dioxide, respectively.

12. The integrated structure of claim 1 wherein the opening extends through a source-side select gate material and to a conductive source material, and wherein the first region of the opening is wider than a fourth region of the opening within the source-side select gate material along the cross-section.

Assignees

• Micron Technology Inc

Inventors

• Sun Jie
• Simsek-Ege Fatma Arzum

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/6314

  of a metallic layer · CPC title

• H10W20/4451

  Semiconductor materials, e.g. polysilicon · CPC title