Semiconductor device and current control method that controls amount of current used for voltage generation based on connection state of external capacitor

Patent metadata

Field	Value
Publication number	US-9454165-B2
Application number	US-201414471685-A
Country	US
Kind code	B2
Filing date	Aug 28, 2014
Priority date	Sep 3, 2013
Publication date	Sep 27, 2016
Grant date	Sep 27, 2016

Abstract

There is provided a semiconductor device including: a current generation circuit that generates a current; a voltage generation circuit that, using the current generated by the current generation circuit, generates and outputs a predetermined voltage from a reference voltage, with an internal capacitor element that is connected to output of the voltage generation circuit, the internal capacitor element being provided within an integrated circuit on which the device itself is mounted; a storage section that stores a flag indicating a connection state between the output of the voltage generation circuit and an external capacitor element provided externally to the integrated circuit; and a controller that, based on the flag, controls a current amount of the current used by the voltage generation circuit to generate the predetermined voltage.

First claim

What is claimed is:

1. A semiconductor device comprising:
a current generation circuit that generates a current;
a voltage generation circuit that, using the current generated by the current generation circuit, generates and outputs a predetermined voltage from a reference voltage, with an internal capacitor element that is connected to an output of the voltage generation circuit, the internal capacitor element being provided within an integrated circuit on which the semiconductor device itself is mounted;
a storage section that stores a flag indicating a connection state between the output of the voltage generation circuit and an external capacitor element provided externally to the integrated circuit; and
a controller that, based on the flag, controls a current amount of the current used by the voltage generation circuit to generate the predetermined voltage,
wherein the current generation circuit comprises
a first PMOS transistor, with a source connected to a power source voltage section,
a second PMOS transistor, with a source connected to the power source voltage section, and with a gate connected to a gate of the first PMOS transistor;
a first NMOS transistor, with a drain connected to a drain and the gate of the first PMOS transistor, and with a gate connected to a drain of the second PMOS transistor,
a second NMOS transistor, with a drain connected to the drain of the second PMOS transistor, with a source connected to a location at a predetermined potential, and with a gate connected to the gate of the first NMOS transistor,
a first resistor element with one terminal connected to a source of the first NMOS transistor,
a second resistor element with one terminal connected to another terminal of the first resistor element, and with another terminal connected to a location at the predetermined potential, and
a third NMOS transistor with a drain connected to the other terminal of the first resistor element, a source connected to a location at the predetermined potential, and a gate connected to the controller,
wherein the controller places the third NMOS transistor in an OFF state in a case in which the flag indicates a connection state of the output of the voltage generation circuit and the external capacitor element connected together, and places the third NMOS transistor in an ON state in a case in which the flag indicates a connection state of the output of the voltage generation circuit and the external capacitor element not connected together.

2. The semiconductor device of claim 1 , wherein the controller:
controls to a first current amount in a case in which the connection state indicated by the flag indicates that the output of the voltage generation circuit and the external capacitor element are connected together; and
controls to a second current amount, that is larger than the current amount of the first current amount, in a case in which the connection state indicated by the flag indicates that the output of the voltage generation circuit and the external capacitor element are not connected together.

3. The semiconductor device of claim 1 , wherein the controller controls the current amount of the current generated by the current generation circuit based on the flag.

4. A semiconductor device comprising:
a current generation circuit that generates current;
a voltage generation circuit that, using the current generated by the current generation circuit, generates and outputs a predetermined voltage from a reference voltage, with an internal capacitor element that is connected to an output of the voltage generation circuit, the internal capacitor element being provided within an integrated circuit on which the semiconductor device itself is mounted; and
a controller that determines a connection state between the output of the voltage generation circuit and an external capacitor element provided externally to the integrated circuit, and that controls a current amount of the current used by the voltage generation circuit to generate the predetermined voltage, based on the connection state,
wherein the current generation circuit comprises
a first PMOS transistor, with a source connected to a power source voltage section,
a second PMOS transistor, with a source connected to the power source voltage section, and with a gate connected to a gate of the first PMOS transistor,
a first NMOS transistor, with a drain connected to a drain and the gate of the first PMOS transistor, and with a gate connected to a drain of the second PMOS transistor,
a second NMOS transistor, with a drain connected to the drain of the second PMOS transistor, with a source connected to a location at a predetermined potential, and with a gate connected to the gate of the first NMOS transistor,
a first resistor element with one terminal connected to a source of the first NMOS transistor,
a second resistor element with one terminal connected to another terminal of the first resistor element, and with another terminal connected to a location at the predetermined potential, and
a third NMOS transistor with a drain connected to the other terminal of the first resistor element, a source connected to a location at the predetermined potential, and a gate connected to the controller,
wherein the controller places the third NMOS transistor in an OFF state in a case in which a connection state of the output of the voltage generation circuit and the external capacitor element are connected together, and places the third NMOS transistor in an ON state in a case in which a connection state of the output of the voltage generation circuit and the external capacitor element are not connected together.

5. The semiconductor device of claim 4 , wherein the controller determines the connection state based on a change amount per unit time of the output voltage output from the voltage generation circuit.

6. The semiconductor device of claim 4 , wherein the controller includes:
a constant current circuit that supplies a predetermined current to the output of the voltage generation circuit;
a control reference voltage generation circuit that generates a control reference voltage with a higher voltage value than the reference voltage; and
a comparison circuit that compares the control reference voltage and the output of the voltage generation circuit,
wherein the controller controls the current amount of the current used by the voltage generation circuit to generate the predetermined voltage, based on a comparison result of the comparison circuit.

7. The semiconductor device of claim 6 , wherein the controller includes:
a control circuit that outputs a start signal and a stop signal;
a first RS latch that is set by, and outputs, a signal at a level corresponding to the start signal, and that is reset according to a signal corresponding to a combination of the comparison result of the comparison circuit and the stop signal;
a switching element that controls to supply current from the constant current circuit to the output of the voltage generation circuit according to level of the output of the first RS latch;
a second RS latch that is set by, and outputs, a signal at a level according to the comparison result of the comparison circuit, and that is reset according to a signal at a level according to the start signal,
wherein the controller controls the current amount based on the signal output from the second RS latch.

8. A current control method of a semiconductor device comprising:
a process of using a current generation circuit to generate a current;
a process of using a voltage generation circuit having an internal capacitor element that is connected to an output of the voltage generation circuit, the internal capacitor element being provided within an int

Assignees

• Lapis Semiconductor Co Ltd

Inventors

• Utsuno Kikuo

Classifications

• G05F3/242

  with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage · CPC title

• G05F3/30

  Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities (G05F3/26 takes precedence) · CPC title

• G05F1/563 Primary

  including two stages of regulation at least one of which is output level responsive, e.g. coarse and fine regulation · CPC title