Underlayer composition and method of manufacturing a semiconductor device
US-2024369932-A1 · Nov 7, 2024 · US
US9454079B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9454079-B2 |
| Application number | US-201414271606-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 7, 2014 |
| Priority date | Nov 7, 2011 |
| Publication date | Sep 27, 2016 |
| Grant date | Sep 27, 2016 |
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According to one embodiment, there is provided an actinic ray- or radiation-sensitive resin composition including (A) a compound represented by a general formula (1) below that generates an acid when exposed to actinic rays or radiation, and (B) a resin.
Opening claim text (preview).
What is claimed is: 1. An actinic ray- or radiation-sensitive resin composition comprising: (A) a compound represented by a general formula (1) below that generates an acid when exposed to actinic rays or radiation, and (B) a resin, wherein X represents a bivalent group containing an oxygen atom, a sulfur atom or a nitrogen atom, which bivalent group is connected to S + to thereby form a cyclic structure; R 1 represents an alkyl group, an alkoxy group, a cycloalkyl group, a cycloalkoxy group, an aryl group or an alkenyl group; each of R 2 and R 3 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group or an aryl group, provided that R 2 and R 3 may be connected to each other to thereby form a ring, and that at least one of R 2 and R 3 is an alkyl group, a cycloalkyl group or an aryl group; provided that R 1 and R 2 may be connected to each other to thereby form a ring; and Z − represents a sulfonate anion represented by a general formula (2) below or a disulfonylimidate anion represented by a general formula (2′) below, wherein each Xfs independently represents a fluorine atom or an alkyl group substituted with at least one fluorine atom; L represents a single bond or a bivalent connecting group; A represents an organic group with a cyclic structure; and x is an integer of 1 to 20, wherein Xf is as defined above in the general formula (2), provided that two Xfs may be connected to each other to thereby form a cyclic structure. 2. The actinic ray- or radiation-sensitive resin composition according to claim 1 , wherein in the general formula (1), X contains an oxygen atom or a group represented by >N—SO 2 —R 4 in which R 4 represents an alkyl group, a cycloalkyl group or an aryl group. 3. The actinic ray- or radiation-sensitive resin composition according to claim 1 , wherein the compound represented by the general formula (1) is represented by general formulae (1a) or (1b) below, wherein R 1 , R 2 and R 3 are as defined above in claim 1 ; Y represents an oxygen atom, a sulfur atom or a nitrogen atom; R 5 represents an electron withdrawing group when Y is a nitrogen atom and is not in existence when Y is an oxygen atom or a sulfur atom; and each of m, n, p and q is an integer of 0 to 3. 4. The actinic ray- or radiation-sensitive resin composition according to claim 3 , wherein in the general formula (1a), Y is an oxygen atom or a nitrogen atom, provided that when Y is a nitrogen atom, R 5 is a group represented by —SO 2 —R 4 , in which R 4 represents an alkyl group, a cycloalkyl group or an aryl group. 5. The actinic ray- or radiation-sensitive resin composition according to claim 1 , wherein the resin (B) is a resin that is decomposed by an action of the acid to thereby increase its solubility in an alkali developer. 6. The actinic ray- or radiation-sensitive resin composition according to claim 1 , wherein the resin (B) contains at least one of repeating units represented by a general formula (3) below and a lactone structure, wherein R 8 represents a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms; R 9 represents a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms; and n is an integer of 1 to 6. 7. An actinic ray- or radiation-sensitive film comprising the actinic ray- or radiation-sensitive resin composition according to claim 1 . 8. A method of forming a pattern, comprising: forming the actinic ray- or radiation-sensitive film containing the actinic ray- or radiation-sensitive resin composition according to claim 1 ; exposing the film to the actinic rays or radiation, and developing the exposed film. 9. The method according to claim 8 , wherein the exposure is an ArF liquid-immersion exposure. 10. A process for manufacturing an electronic device, comprising the method according to claim 8 . 11. The actinic ray- or radiation-sensitive resin composition according to claim 1 , wherein the anion Z − in general formula (1) is a sulfonate anion represented by general formula (2) and A general formula (2) is a alicyclic group having a polycyclic structure.
in the presence of a fluid, e.g. immersion; using fluid cooling means · CPC title
having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title
of salts of sulfonic acids · CPC title
containing only one sulfo group · CPC title
Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) · CPC title
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