Thin-film devices and fabrication

Patent metadata

Field	Value
Publication number	US-9454053-B2
Application number	US-201214362863-A
Country	US
Kind code	B2
Filing date	Dec 10, 2012
Priority date	Dec 12, 2011
Publication date	Sep 27, 2016
Grant date	Sep 27, 2016

Abstract

Thin-film devices, for example electrochromic devices for windows, and methods of manufacturing are described. Particular focus is given to methods of patterning optical devices. Various edge deletion and isolation scribes are performed, for example, to ensure the optical device has appropriate isolation from any edge defects. Methods described herein apply to any thin-film device having one or more material layers sandwiched between two thin film electrical conductor layers. The described methods create novel optical device configurations.

First claim

We claim:

1. A method of fabricating an optical device comprising one or more material layers sandwiched between a first and a second conducting layer, the method comprising:
(i) receiving a substrate comprising the first conducting layer over its work surface;
(ii) removing a first width of the first conducting layer at the periphery of the substrate and along between about 10% and about 90% of the perimeter of the substrate;
(iii) depositing said one or more material layers of the optical device and the second conducting layer such that they cover the first conducting layer and extend beyond the first conducting layer into the first width at the periphery of the substrate;
(iv) removing a second width, narrower than the first width, of all the layers at the periphery of the substrate along substantially the entire perimeter of the substrate, wherein the depth of removal is at least sufficient to remove the first conducting layer;
(v) removing at least one portion of the second transparent conducting layer and the one or more layers of the optical device thereunder, thereby revealing at least one exposed portion of the first conducting layer; and
(vi) applying a bus bar to said at least one exposed portion of the first transparent conducting layer, wherein at least one of the first and second conducting layers is transparent.

2. The method of claim 1 , wherein (ii) comprises removing the first width of the first conducting layer from between about 50% and about 75% around the perimeter of the substrate.

3. The method of claim 2 , wherein said at least one exposed portion of the first conducting layer exposed is fabricated along the perimeter portion of the optical device proximate the side or sides of the substrate where the first conducting layer was not removed in (ii).

4. The method of claim 3 , further comprising applying at least one second bus bar to the second conducting layer.

5. The method of claim 4 , wherein said at least one second bus bar is applied to the second conducting layer on a portion that does not cover the first conducting layer.

6. The method of claim 5 , further comprising fabricating at least one L2 scribe line to isolate a portion of the optical device orthogonal the bus bar.

7. The method of claim 5 , further comprising fabricating an L3 scribe line to isolate a portion of the optical device between the bus bar and an active region of the optical device.

8. The method of claim 5 , further comprising:
fabricating at least one L2 scribe line to isolate a portion of the optical device orthogonal the bus bar; and
fabricating an L3 scribe line to isolate a portion of the optical device between the bus bar and an active region of the optical device.

9. The method of claim 4 , wherein the depth of removal sufficient to remove at least the first conducting layer in (iv) is sufficient to remove the diffusion barrier, and wherein said at least one second bus bar is applied to the second conducting layer on a portion that does not cover the first conducting layer or the diffusion barrier.

10. The method of claim 9 , further comprising fabricating at least one L2 scribe line to isolate a portion of the optical device orthogonal the bus bar.

11. The method of claim 9 , further comprising fabricating an L3 scribe line to isolate a portion of the optical device between the bus bar and an active region of the optical device.

12. The method of claim 9 , further comprising:
fabricating at least one L2 scribe line to isolate a portion of the optical device orthogonal to the bus bar; and
fabricating an L3 scribe line to isolate a portion of the optical device between the bus bar and an active region of the optical device.

13. The method of claim 12 , wherein the optical device is an electrochromic device.

14. The method of claim 13 , wherein the electrochromic device is all solid-state and inorganic.

15. The method of claim 14 , wherein the substrate is float glass and the first conducting layer comprises fluorinated tin oxide.

16. The method of claim 8 , wherein (iii) is performed in an all vacuum integrated deposition apparatus.

17. The method of claim 8 , further comprising depositing a vapor barrier layer on the second conducting layer prior to (iv).

18. The method of claim 8 , wherein both the first and second conducting layers are transparent.

19. The method of claim 18 , wherein the substrate is transparent.

20. The method of claim 12 , wherein the substrate is rectangular.

21. The method of claim 20 , wherein (ii) comprises removing the first width of the first conducting layer from three sides about the perimeter of the substrate.

22. The method of claim 21 , wherein said at least one exposed portion of the first conducting layer is fabricated along the length of one side of the optical device.

23. The method of claim 22 , wherein said at least one exposed portion of the first conducting layer is fabricated along the length of the side of the optical device proximate the side of the substrate where the first conducting layer was not removed in (ii).

24. The method of claim 23 , wherein said at least one second bus bar is applied to the second conducting layer proximate the side of the optical device opposite said at least one exposed portion of the first conducting layer.

25. The method of claim 24 , wherein the optical device is an electrochromic device.

26. The method of claim 25 , wherein the electrochromic device is all solid-state and inorganic.

27. The method of claim 26 , wherein the substrate is float glass, tempered or untempered, and the first conducting layer comprises fluorinated tin oxide.

28. The method of claim 27 , wherein (iii) is performed in an all vacuum integrated deposition apparatus.

29. The method of claim 28 , further comprising depositing a vapor barrier layer on the second conducting layer prior to (iv).

30. The method of claim 12 , wherein (ii) comprises removing the first width of the first conducting layer from two opposing sides at the perimeter of the substrate.

31. The method of claim 30 , wherein said at least one exposed portion of the first conducting layer comprises a pair of exposed portions fabricated along the lengths of the opposing sides of the optical device from which the first width was not removed in (ii).

32. The method of claim 31 , wherein (vi) comprises applying a bus bar to each of said pair of exposed portions of the first conducting layer.

33. The method of claim 32 , wherein applying said at least one second bus bar to the second conducting layer comprises applying a pair of second bus bars, each of said pair of second bus bars on opposing lengths of the second conducting layer and over areas where the first conducting layer was removed in (ii).

34. The method of claim 33 , wherein the optical device is an electrochromic device.

35. The method of claim 34 , wherein the electrochromic device is all solid-state and inorganic.

36. The method of claim 35 , wherein the substrate is float glass, tempered or untempered, and the first conducting layer comprises fluorinated tin oxide.

37. The method of claim 36 , wherein (iii) is performed in an all vacuum integrated deposition apparatus.

Assignees

• Strong Fabian
• Bhatnagar Yashraj
• Dixit Abhishek Anant
• Martin Todd
• Rozbicki Robert T
• View Inc

Inventors

• Strong Fabian
• Bhatnagar Yashraj
• Dixit Abhishek Anant
• Martin Todd
• Rozbicki Robert T

Classifications

• Y10T29/49126

  Assembling bases · CPC title

• G02F1/155 Primary

  Electrodes · CPC title

• B32B17/1099

  After-treatment of the layered product, e.g. cooling · CPC title

• C23C14/086

  of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title

• B32B17/10513

  Electrochromic layer · CPC title