Method for manufacturing nanowires

Patent metadata

Field	Value
Publication number	US-9453283-B2
Application number	US-201514624318-A
Country	US
Kind code	B2
Filing date	Feb 17, 2015
Priority date	Aug 14, 2014
Publication date	Sep 27, 2016
Grant date	Sep 27, 2016

Abstract

A method of manufacturing a nanowire includes: forming a silicon oxide layer by performing deposition of a silicon oxide on a substrate; forming a metal layer by performing deposition of a metal on the silicon oxide layer; forming a metal agglomerate by performing heat treatment on the substrate where the metal layer is formed; and growing a nanowire in an area where the metal agglomerate is formed by performing plasma treatment on the substrate where the metal agglomerate is formed.

First claim

What is claimed is:

1. A method of manufacturing a nanowire, the method comprising:
forming a silicon oxide layer by performing deposition of a silicon oxide on a substrate;
forming a metal layer by performing deposition of a metal on the silicon oxide layer;
forming a metal agglomerate by performing heat treatment on the substrate where the metal layer is formed; and
growing a nanowire in an area where the metal agglomerate is formed by performing plasma treatment on the substrate where the metal agglomerate is formed, wherein the nanowire is grown between the metal agglomerate and the substrate.

2. The method of claim 1 , wherein forming the silicon oxide layer comprises performing one of chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD).

3. The method of claim 1 , wherein the silicon oxide layer has a thickness of 80 nm to 120 nm.

4. The method of claim 1 , wherein the metal is one of silver (Ag), copper (Cu), gold (Au), aluminum (Al), magnesium (Mg), rhodium (Rh), iridium (Ir), tungsten (W), molybdenum (Mo), cobalt (Co), zinc (Zn), nickel (Ni), cadmium (Cd), ruthenium (Ru), osmium (Os), platinum (Pt), palladium (Pd), tin (Sn), rubidium (Rb), chromium (Cr), tantalum (Ta), niobium (Nb) and metal alloys thereof.

5. The method of claim 4 , wherein the metal is silver (Ag) or a silver alloy.

6. The method of claim 1 , wherein forming the metal layer comprises performing one of a sputtering method, a vacuum deposition method, and an electroplating method.

7. The method of claim 1 , wherein the metal layer has a thickness of 5 nm to 20 nm.

8. The method of claim 1 , wherein the heat treatment is performed at a temperature of 50° C. to 600° C.

9. The method of claim 1 , wherein the plasma treatment uses gas comprising at least one of chlorine (Cl 2 ) gas, nitrogen (N 2 ) gas, argon (Ar) gas and hydrogen (H 2 ) gas.

10. The method of claim 1 , further comprising: removing the residual metal agglomerate from a surface of the nanowire by performing wet etching on the substrate where the nanowire grows.

Assignees

• Samsung Display Co Ltd

Inventors

• Choi Kyung Min

Classifications

• C23C14/165

  by cathodic sputtering · CPC title

• C23C16/56 Primary

  After-treatment · CPC title

• C23C14/0021

  Reactive sputtering or evaporation · CPC title

• C25D7/0607

  Wires · CPC title

• C23C16/402

  Silicon dioxide · CPC title