Method of producing a semiconductor laser element, and semiconductor laser element

Patent metadata

Field	Value
Publication number	US-9450376-B2
Application number	US-201314420411-A
Country	US
Kind code	B2
Filing date	Aug 12, 2013
Priority date	Aug 13, 2012
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).

First claim

The invention claimed is:

1. A method of producing a plurality of semiconductor laser elements comprising:
A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements,
C) providing a wafer comprising a plurality of laser bars having a multiplicity of semiconductor laser diodes which comprise a common growth substrate and a semiconductor layer sequence grown thereon, wherein
strip-shaped metallizations for contact locations of the semiconductor laser elements are provided at a top side of the semiconductor layer sequence,
holes are introduced into the wafer, said holes being situated in each case between adjacent contact locations and penetrating through the common growth substrate and the semiconductor layer sequence completely, and wherein two adjacent semiconductor laser diodes share one of the holes,
D) fitting the wafer on a top side of the carrier assemblage, wherein the top side of the carrier assemblage is provided with a further metallization, said further metallization not being covered by the semiconductor laser diodes in places and forming further contact locations, wherein the semiconductor laser elements are electrically connectable via the contact locations and the further contact locations, and
E) singulating to form the semiconductor laser elements after D).

2. The method according to claim 1 , wherein the top side is oriented perpendicularly to an end side of the carrier assemblage, and which comprises between A) and C):
B) producing predetermined breaking locations in the carrier assemblage between adjacent carriers.

3. The method according to claim 2 , wherein the end side terminates flush with the semiconductor laser diodes.

4. The method according to claim 1 , wherein further predetermined breaking locations are produced at the laser bar before D), and the laser bar is singulated along the further predetermined breaking locations in E).

5. The method according to claim 1 , wherein in D) the laser bars are separated to form the semiconductor laser diodes by scribing, breaking and/or laser radiation, and simultaneously or subsequently the carrier assemblage is singulated such that adjacent carriers no longer directly mechanically connect to one another and one or a plurality of the semiconductor laser diodes are situated at each of the carriers.

6. The method according to claim 1 , wherein a predetermined breaking location extends 25% to 75% through the carrier assemblage, in a direction perpendicular to the top side.

7. The method according to claim 1 , wherein the laser bar in D) comprises 10 to 60 of the semiconductor laser diodes, and the semiconductor laser diodes are monomode lasers.

8. The method according to claim 1 , wherein in D) a plurality of the laser bars and a plurality of the carrier assemblages are combined alternately successively to form a rack, and, in each case, one of the laser bars is fixed to exactly one of the carrier assemblages in the rack by soldering.

9. The method according to claim 1 , wherein, after E), side surfaces of the divided growth substrate, of the semiconductor layer sequence and of the carriers are aligned parallel to one another and the carriers, and the divided growth substrate and the semiconductor layer sequence have identical widths with a tolerance of at most 6 μm and terminate flush with one another with a tolerance of at most 6 μm.

10. The method according to claim 1 , wherein the carrier assemblage projects beyond the laser bar in a direction perpendicular to a rear side situated opposite the end side and a holding strip of the carrier assemblage is formed as a result, and the holding strip is partly or completely removed in or after E).

11. The method according to claim 1 , wherein the finished semiconductor laser elements each comprise exactly one of the semiconductor laser diodes, the semiconductor laser elements have a width of 100 μm to 350 μm, a length of 175 μm to 700 μm and a thickness of 125 μm to 450 μm.

12. The method according to claim 1 , wherein the carrier assemblage and the carriers are produced from silicon or aluminum nitride and are provided with at least one electrically conductive coating at least in places at the top side.

13. The method according to claim 1 , wherein the semiconductor laser diode is based on AlInGaAs and emits laser radiation in the wavelength range of 790 nm to 890 nm.

14. A method of producing a plurality of semiconductor laser elements comprising:
A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements,
B) producing predetermined breaking locations in the carrier assemblage between adjacent carriers,
C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which comprise a common growth substrate and a semiconductor layer sequence grown thereon,
D) fitting the laser bar on a top side of the carrier assemblage such that the carrier assemblage projects beyond the laser bar in a direction perpendicular to a rear side situated opposite an end side of the carrier assemblage so that a partial region of the carrier assemblage projecting beyond the laser bar forms a holding strip of the carrier assemblage, wherein the holding strip is free of predetermined breaking locations and the individual carriers of the semiconductor laser elements are mechanically connected together by the holding strip, and
E) singulating at the predetermined breaking locations along singulation lines to form the semiconductor laser elements after D), wherein the holding strip is partly or completely removed during or after E).

15. The method according to claim 14 , wherein B) succeeds A).

16. The method according to claim 14 , wherein A) and B) are carried out before C).

17. The method according to claim 14 , wherein A) and B) are carried out after C).

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Enzmann Roland
• Haneder Stephan
• Arzberger Markus
• Walter Christoph
• Swietlik Tomasz
• König Harald
• Fehse Robin
• Kämpf Mathias
• Graul Markus
• Horn Markus

Classifications

• H01S5/0202 Primary

  Cleaving · CPC title

• H01S5/0201 Primary

  Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth · CPC title

• H01S5/02268

  Electricity · mapped topic

• H01S5/02272

  Electricity · mapped topic

• H01S5/02276

  Electricity · mapped topic