Organic light emitting diode

Patent metadata

Field	Value
Publication number	US-9450200-B2
Application number	US-201514714750-A
Country	US
Kind code	B2
Filing date	May 18, 2015
Priority date	Nov 20, 2012
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

An organic light emitting diode includes a first electrode including a first electrode including a reflective metal layer formed of a light-reflective metal, an upper transparent conductive layer positioned on the reflective metal layer, and a protective layer positioned on the upper transparent conductive layer; an organic emission layer positioned on the first electrode; and a second electrode positioned on the organic emission layer, wherein the upper transparent conductive layer is amorphous.

First claim

What is claimed is:

1. An organic light emitting diode, comprising:
a first electrode including a reflective metal layer of a light-reflective metal, an upper transparent conductive layer on the reflective metal layer, and a protective layer on the upper transparent conductive layer;
an organic emission layer on the first electrode; and
a second electrode on the organic emission layer,
wherein the upper transparent conductive layer is amorphous,
the upper transparent conductive layer contains indium tin oxide (ITO) or indium zinc oxide (IZO),
the upper transparent conductive layer further includes a transition metal or a post-transition metal, and
the transition metal is one of cobalt (Co), copper (Cu), cadmium (Cd), zinc (Zn), nickel (Ni), mercury (Hg), iron (Fe), manganese (Mn), and titanium (Ti).

2. The organic light emitting diode of claim 1 , wherein the reflective metal layer contains silver (Ag).

3. The organic light emitting diode of claim 1 , wherein the upper transparent conductive layer includes the post-transition metal and the post-transition metal is one of thallium (Tl), bismuth (Bi), aluminum (Al), tin (Sn), and lead (Pb).

4. The organic light emitting diode of claim 1 , wherein the protective layer comprises an amorphous oxide.

5. The organic light emitting diode of claim 4 , wherein the amorphous oxide comprises at least one of silver (Ag), copper (Cu), aluminum (Al), hydrogen fluoride (HF), rhenium (Re), tantalum (Ta), bismuth (Bi), iron (Fe), indium (In), ruthenium (Ru), tellurium (Te), vanadium (V), zirconium (Zr), chromium (Cr), gallium (Ga), antimony (Sb), and manganese (Mn).

6. The organic light emitting diode of claim 1 , wherein the protective layer comprises an amorphous iodide.

7. The organic light emitting diode of claim 6 , wherein the amorphous iodide comprises one of alkali metal, alkaline earth metal, transition metal, post-transition metal, and lanthanoid metal.

8. The organic light emitting diode of claim 7 , wherein the alkali metal is one of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), and cesium (Cs).

9. The organic light emitting diode of claim 7 , wherein the alkaline earth metal is one of magnesium (Mg), calcium (Ca), barium (Ba), and strontium (Sr).

10. The organic light emitting diode of claim 7 , wherein the transition metal is one of cobalt (Co), copper (Cu), cadmium (Cd), zinc (Zn), nickel (Ni), mercury (Hg), iron (Fe), manganese (Mn), and titanium (Ti).

11. The organic light emitting diode of claim 7 , wherein the post-transition metal is one of thallium (Tl), bismuth (Bi), aluminum (Al), tin (Sn), and lead (Pb).

12. The organic light emitting diode of claim 7 , wherein the lanthanoid metal is one of ytterbium (Yb), samarium (Sm), and europium (Eu).

13. The organic light emitting diode of claim 1 , further comprising a lower transparent conductive layer below the reflective metal layer.

14. The organic light emitting diode of claim 1 , wherein the protective layer has a lower work function than the upper transparent conductive layer.

15. The organic light emitting diode of claim 1 , wherein the protective layer has a smaller thickness than the upper transparent conductive layer.

16. The organic light emitting diode of claim 15 , wherein the protective layer has a thickness of 1 nm to 5 nm.

17. The organic light emitting diode of claim 1 , wherein the reflective metal layer and the protective layer are in contact with the upper transparent conductive layer.

Assignees

• Samsung Display Co Ltd

Inventors

• Kim Dong-Chan
• Lee Jong-Hyuk
• Song Young-Woo
• Kim Won-Jong
• Hwang Kyu-Hwan
• Yoon Seok-Gyu
• Kim Eung-Do
• Jung Bo-Ra
• Seo Dong-Kyu

Classifications

• H10K50/818

  Reflective anodes, e.g. ITO combined with thick metallic layers · CPC title

• H10K59/80518 Primary

  Reflective anodes, e.g. ITO combined with thick metallic layers · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H01L27/3244

  Electricity · mapped topic