Solid state transducer dies having reflective features over contacts and associated systems and methods

Patent metadata

Field	Value
Publication number	US-9450152-B2
Application number	US-201213482176-A
Country	US
Kind code	B2
Filing date	May 29, 2012
Priority date	May 29, 2012
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

Systems and methods for improved light emitting efficiency of a solid state transducer (SST), for example light emitting diodes (LED), are disclosed. One embodiment of an SST die in accordance with the technology includes a reflective material disposed over electrical connectors on a front side of the die. The reflective material has a higher reflectivity than a base material of the connectors such that light traveling toward the connectors reflects back out of the device.

First claim

We claim:

1. A light emitting diode (LED), comprising:
a transduction structure including a back side, a front side opposite the back side, a first semiconductor material having a first surface at the back side, a second semiconductor material having a second surface at the front side, and an active material between the first and second semiconductor materials;
a first electrical connector electrically coupled to the first semiconductor material; and
a second electrical connector having—
a base material electrically coupled to the second surface of the second semiconductor material, the base material having a first outer surface facing the transduction structure, a flat second outer surface opposite the first outer surface, and a third and a fourth outer surfaces extending between the first and second outer surfaces, and
a reflective material over the base material, wherein the reflective material has a higher reflectivity than the base material, wherein the second surface of the second semiconductor material is only partially covered by the reflective material, and wherein the reflective material surrounds the entire second outer surface, the third outer surface, and the fourth outer surface of the base material.

2. The LED of claim 1 wherein the second electrical connector further comprises a current spreading material between the base material and the reflective material.

3. The LED of claim 2 wherein the base material is at least one of a Ti—Al alloy and Al, the current spreading material is Au, and the reflective material is at least one of Al, Ag or an Ag alloy.

4. The LED of claim 1 wherein the second electrical connector comprises a plurality of traces of the base material on a surface of the second semiconductor material.

5. The LED of claim 1 , further comprising a converter material disposed at least partially around the active semiconductor material.

6. A method of manufacturing light emitting diode (LED) dies, comprising:
forming a transduction structure having a back side, a front side opposite the back side, a first semiconductor material having a first surface at the back side, a second semiconductor material having a second surface at the front side, and an active material between the first and second semiconductor materials;
forming a first electrical connector electrically coupled to the first semiconductor material; and
forming a second electrical connector electrically coupled to the second semiconductor material by—
electrically coupling a base material of the second electrical connector to the second semiconductor material, wherein the base material has a first outer surface facing the transduction structure, a flat second outer surface opposite the first outer surface, and a third and a fourth outer surfaces extending between the first and second outer surfaces, and
depositing a reflective material over the base material, wherein the reflective material has a higher reflectivity than the base material, and wherein the second surface of the second semiconductor material is only partially covered by the reflective material, and wherein the reflective material surrounds the entitire second outer surface, the third outer surface, and the fourth outer surface of the base material.

7. The method of claim 6 , further comprising forming a current spreading material on the base material before depositing the reflective material such that the current spreading material is between the base material and the reflective material.

8. The method of claim 7 wherein the base material is at least one of a Ti—Al alloy and Al, the current spreading material is Au, and the reflective material is at least one of Al, Ag or an Ag alloy.

9. The method of claim 6 wherein forming the second electrical connector comprises disposing a plurality of traces of the base material on a surface of the second semiconductor material.

10. The method of claim 6 , further comprising providing a converter material at least partially around the active semiconductor material.

11. The method of claim 6 , further comprising providing a lens at least partially around the active semiconductor material.

Assignees

• Schubert Martin F
• Odnoblyudov Vladimir
• Micron Technology Inc

Inventors

• Schubert Martin F
• Odnoblyudov Vladimir

Classifications

• H10H20/8312

  extending at least partially through the bodies · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/8512

  Wavelength conversion materials · CPC title

• H10H20/855

  Optical field-shaping means, e.g. lenses · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title