Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices

Patent metadata

Field	Value
Publication number	US-9450143-B2
Application number	US-201213357578-A
Country	US
Kind code	B2
Filing date	Jan 24, 2012
Priority date	Jun 18, 2010
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

A gallium and nitrogen containing optical device has a base region and no more than three major planar side regions configured in a triangular arrangement provided from the base region.

First claim

What is claimed is:

1. A lamp comprising:
an light emitting diode (LED) device comprising at least:
a gallium and nitrogen containing substrate having first, second, and third a-planes forming an equilateral triangle;
a light-emitting epitaxial structure overlying said substrate;
p-type metallized contact; and
an n-type metallized contact;

wherein said LED device comprises no more than five sides, wherein three sides of said five sides are along said first, second and third a-planes; and the remaining two sides of said five sides have a triangular shape and are configured from equivalent crystal planes.

2. The lamp of claim 1 , wherein the two sides are in parallel to each other.

3. The lamp of claim 1 , wherein at least one of the three surfaces is roughened.

4. The lamp of claim 1 , wherein said substrate comprises bulk GaN.

5. The lamp of claim 1 , wherein said equivalent crystal planes are c-planes.

6. The lamp of claim 1 , wherein said first, second and third sides are cleaved sides.

7. The lamp of claim 6 , wherein said first, second and third sides have striations along said a-planes.

8. The lamp of claim 7 , wherein said striations are perpendicular to said fourth and fifth sides.

9. The lamp of claim 1 , wherein said optical device has only five sides.

10. A light emitting diode (LED) device comprising:
a gallium and nitrogen containing substrate having first, second, and third a-planes forming a triangle; and
a light-emitting epitaxial structure overlying said substrate;
a p-type metallized contact; and
n-type metallized contact;
wherein said LED device comprises no more than five sides, wherein three of said five sides are along said first, second, and third a-planes, and the remaining two sides of said five sides have a triangular shape and are configured from equivalent crystal planes.

11. The LED device of claim 10 , wherein the equivalent crystal planes are c-planes.

12. The LED device of claim 10 , wherein the three surface regions are configured from respective scribes provided within a vicinity of respective a-planes.

13. The LED device of claim 10 , wherein the two surfaces are parallel to each other.

14. The LED of claim 10 , wherein at least one of the three surfaces is roughened.

15. The LED device of claim 10 , wherein said substrate comprises bulk GaN.

16. The LED device of claim 15 , wherein said light-emitting epitaxial structure comprises GaN.

17. The LED device of claim 10 , wherein said first, second and third sides are cleaved sides.

18. The LED device of claim 17 , wherein said first, second and third sides have striations along said a-planes.

19. The LED device of claim 18 , wherein said striations are perpendicular to said fourth and fifth sides.

20. The LED device of claim 10 , wherein said optical device has only five sides.

21. A lamp comprising:
an optical device comprising at least:
a gallium and nitrogen containing substrate having first, second, and third a-planes forming an equilateral triangle; and
a light-emitting epitaxial structure overlying said substrate;

wherein said optical device comprises no more than five sides, wherein three sides of said five sides are along said first, second and third a-planes; and the remaining two sides of said five sides have a triangular shape and are configured from equivalent crystal planes, wherein said first, second and third sides are sufficiently rough to achieve a light extraction efficiency of over 80%.

22. An optical device comprising:
a gallium and nitrogen containing substrate having first, second and third a-planes forming a triangle; and
a light-emitting epitaxial structure overlying said substrate;
wherein said optical device comprises no more than five sides, wherein three of said five sides are along said first, second, and third a-planes, and the remaining two sides of said five sides have a triangular shape and are configured from equivalent crystal planes, wherein said first, second and third sides are sufficiently rough to achieve a light extraction efficiency of over 80%.

Assignees

• Sharma Rajat
• Felker Andrew
• David Aurelien J F
• Soraa Inc

Inventors

• Sharma Rajat
• Felker Andrew
• David Aurelien J F

Classifications

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/819 Primary

  characterised by their shape, e.g. curved or truncated substrates · CPC title

• H10H20/817

  characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous · CPC title

• H10H20/01

  Manufacture or treatment · CPC title

• H10H20/815 Primary

  having stress relaxation structures, e.g. buffer layers · CPC title