Lateral type photodiode, image sensor including the same, and method of manufacturing the photodiode and the image sensor

Patent metadata

Field	Value
Publication number	US-9450122-B2
Application number	US-201514711420-A
Country	US
Kind code	B2
Filing date	May 13, 2015
Priority date	May 14, 2014
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

Example embodiments relate to a lateral type photodiode including a substrate, an insulation mask layer formed on the substrate, and a first type semiconductor layer, an active layer, and a second type semiconductor layer that contact a surface of the insulation mask layer and that are sequentially disposed in a direction substantially parallel to the surface of the insulation mask layer. The insulation mask layer includes a through hole, and the first type semiconductor layer, the active layer, and the second type semiconductor layer are sequentially formed from the through hole by using a lateral overgrowth method.

First claim

What is claimed is:

1. An image sensor comprising:
a silicon substrate;
a read out integrated circuit (ROIC) on the silicon substrate;
an insulation mask layer covering the ROIC and including at least one through hole, the through hole not exposing the ROIC;
a first type semiconductor layer extending from the through hole along a topmost surface of the insulation mask layer;
an active layer contacting the first type semiconductor layer; and
a second type semiconductor layer contacting the active layer.

2. The image sensor of claim 1 , wherein the first type semiconductor layer, the active layer, and the second type semiconductor layer contact the topmost surface of the insulation mask layer and are arranged along a direction substantially parallel to the topmost surface of the insulation mask layer.

3. The image sensor of claim 2 , wherein the active layer is configured to substantially surround a lateral surface of the first type semiconductor layer, and
wherein the second type semiconductor layer is configured to substantially surround a lateral surface of the active layer.

4. The image sensor of claim 2 , wherein the active layer comprises two areas along two opposite lateral surfaces of the first type semiconductor layer, and
wherein the second type semiconductor layer comprises two areas at opposite ends of the two areas of the active layer from the first type semiconductor layer.

5. The image sensor of claim 1 , wherein the first type semiconductor layer, the active layer and the second type semiconductor layer are on the topmost surface of the insulation mask layer and arranged along a direction substantially perpendicular to the topmost surface of the insulation mask layer.

6. The image sensor of claim 1 , wherein the insulation mask layer comprises an oxide or a nitride.

7. The image sensor of claim 1 , wherein the through hole comprises a seed layer.

8. The image sensor of claim 1 , wherein projected areas of the ROIC and the active layer are overlapped.

9. The image sensor of claim 1 , wherein at least one of the first type semiconductor layer, the active layer, and the second type semiconductor layer comprise a group III-V compound semiconductor material.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Ahn Jihoon
• Jeon Yongwoo
• Kim Jungwoo
• Park Haeseok
• Ahn Seungeon
• Lee Seunghyup
• Jung Myounghoon
• Choi Hyuksoon

Classifications

• H10F77/148

  Shapes of potential barriers · CPC title

• H10F77/147

  Shapes of bodies · CPC title

• H10F77/14

  Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies · CPC title

• H10F71/1276

  comprising growth substrates not made of Group III-V materials · CPC title

• H10F71/127

  The active layers comprising only Group III-V materials, e.g. GaAs or InP · CPC title