Methods and devices for fabricating and assembling printable semiconductor elements

Patent metadata

Field	Value
Publication number	US-9450043-B2
Application number	US-201414155010-A
Country	US
Kind code	B2
Filing date	Jan 14, 2014
Priority date	Jun 4, 2004
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

First claim

We claim:

1. A stretchable semiconductor element comprising:
an elastic substrate having a supporting surface; and
a stretchable semiconductor structure having a curved internal surface, wherein said stretchable semiconductor structure is a single crystalline semiconductor material, wherein said curved internal surface is continuously bonded to said supporting surface while said elastic substrate is in an expanded state, wherein said curved internal surface has at least one convex region and at least one concave region, and wherein said stretchable semiconductor structure comprises a bent structure under strain resulting from application of a force arising from allowing said elastic substrate to relax from the expanded state.

2. The stretchable semiconductor element of claim 1 wherein said stretchable semiconductor structure is in a bent conformation.

3. The stretchable semiconductor element of claim 1 wherein said curved internal surface has a contour profile characterized by a periodic wave.

4. The stretchable semiconductor element of claim 1 wherein said curved internal surface has a contour profile characterized by an aperiodic wave.

5. The stretchable semiconductor element of claim 1 wherein said stretchable semiconductor structure comprises a ribbon in a bent configuration having a contour profile characterized by a periodic wave extending the length of said ribbon.

6. The stretchable semiconductor element of claim 5 wherein said bent ribbon has a width selected over the range of about 5 microns to about 50 microns and a thickness selected over the range of about 50 nanometers to about 500 nanometers.

7. The stretchable semiconductor element of claim 1 wherein said elastic substrate comprises poly(dimethylsiloxane).

8. The stretchable semiconductor element of claim 1 wherein said elastic substrate has a thickness equal to about 1 millimeter.

9. The stretchable semiconductor element of claim 1 wherein said stretchable semiconductor structure is an inorganic semiconductor material.

10. The stretchable semiconductor element of claim 1 wherein said stretchable semiconductor structure comprises single crystalline silicon.

11. A stretchable electrical circuit comprising:
an elastic substrate having a supporting surface; and
an electrical circuit having a curved internal surface, wherein the electrical circuit comprises at least one stretchable semiconductor structure, wherein said at least one stretchable semiconductor structure is a single crystalline semiconductor material, wherein said curved internal surface of said electrical circuit is continuously bonded to said supporting surface of said elastic substrate while said elastic substrate is in an expanded state, wherein said electrical circuit is in a bent conformation, and wherein said electrical circuit having said curved internal surface is under strain resulting from application of a force arising from allowing said elastic substrate to relax from the expanded state.

12. The stretchable electrical circuit of claim 11 wherein said electrical circuit comprises a plurality of integrated device components.

13. The stretchable electrical circuit of claim 11 wherein said integrated device components are selected from the group consisting of: a semiconductor element; a dielectric element; an electrode; a conductor element; and a doped semiconductor element.

14. The stretchable electrical circuit of claim 11 wherein said curved internal surface has a contour profile characterized by a periodic wave.

15. The stretchable electrical circuit of claim 11 wherein said curved internal surface has a contour profile characterized by an aperiodic wave.

Assignees

• Univ Illinois

Inventors

• Nuzzo Ralph G
• Rogers John A
• Menard Etienne
• Lee Keon Jae
• Khang Dahl-Young
• Sun Yugang
• Meitl Matthew
• Zhu Zhengtao

Classifications

• H10W99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W72/932

  Plan-view shape, i.e. in top view · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/923

  Bond pads having multiple stacked layers · CPC title