Semiconductor device

Patent metadata

Field	Value
Publication number	US-9449996-B2
Application number	US-201313957819-A
Country	US
Kind code	B2
Filing date	Aug 2, 2013
Priority date	Aug 3, 2012
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a substrate;
a gate electrode and a line over the substrate, in non-overlapping regions;
a first insulating film over the substrate, the gate electrode, and the line;
a second insulating film over the first insulating film;
a third insulating film over the second insulating film;
a light-transmitting pixel electrode over the third insulating film;
a transistor comprising:
the gate electrode;
the first insulating film over the gate electrode; and
a semiconductor film over the first insulating film and overlapping the gate electrode, the semiconductor film being electrically connected to the pixel electrode; and

a capacitor comprising:
a light-transmitting film able to conduct electricity as a first capacitor electrode over the first insulating film;
the third insulating film as a capacitor dielectric film over the first capacitor electrode; and
the pixel electrode as a second capacitor electrode over the capacitor dielectric film,

wherein the first, the second, and the third insulating films overlap with the semiconductor film,
wherein a stack comprising the first insulating film, the second insulating film, and the third insulating film is interposed between the line and the pixel electrode, and
wherein the second insulating film is not provided in a region entirely overlapping with the first and the second capacitor electrodes, and the third insulating film is on and in direct contact with the first capacitor electrode.

2. The semiconductor device according to claim 1 , wherein the semiconductor film and the first capacitor electrode are on and in direct contact with the first insulating film.

3. The semiconductor device according to claim 1 , wherein the first capacitor electrode and the semiconductor film are formed from a same film.

4. The semiconductor device according to claim 1 , wherein the first capacitor electrode and the semiconductor film are formed from a same oxide semiconductor film.

5. The semiconductor device according to claim 1 ,
wherein the first capacitor electrode and the semiconductor film are formed from an oxide semiconductor film, and
wherein the first capacitor electrode further contains a dopant at a concentration greater than 1×10 19 atoms/cm 3 and less than or equal to 1×10 22 atoms/cm 3 .

6. The semiconductor device according to claim 1 , further comprising an organic insulating film interposed between the third insulating film and the pixel electrode,
wherein the pixel electrode is in direct contact with the third insulating film through an opening in the organic insulating film.

7. The semiconductor device according to claim 1 , further comprising a capacitor line formed from a same film as the gate electrode,
wherein the first capacitor electrode is connected to the capacitor line through a film formed from a same film as a source electrode or a drain electrode of the transistor.

8. The semiconductor device according to claim 1 , further comprising a capacitor line,
wherein the light-transmitting film able to conduct electricity contains a semiconductor material, and
wherein the semiconductor device is configured so that, when used, a potential applied to the capacitor line is constantly lower than a potential to be supplied to the pixel electrode by a threshold voltage of the capacitor or more.

9. A display device comprising the semiconductor device according to claim 1 .

10. An electronic device comprising the semiconductor device according to claim 1 .

11. A semiconductor device comprising:
a substrate;
a gate electrode and a line over the substrate, in non-overlapping regions;
a first insulating film over the substrate, the gate electrode, and the line;
a second insulating film over the first insulating film;
a third insulating film over the second insulating film;
a light-transmitting pixel electrode over the third insulating film;
a transistor comprising:
the gate electrode;
the first insulating film over the gate electrode; and
a metal oxide semiconductor film over the first insulating film and overlapping the gate electrode, the metal oxide semiconductor film being electrically connected to the pixel electrode; and

a capacitor comprising:
a light-transmitting film able to conduct electricity as a first capacitor electrode over the first insulating film;
the third insulating film as a capacitor dielectric film over the first capacitor electrode; and
the pixel electrode as a second capacitor electrode over the capacitor dielectric film,

wherein the first capacitor electrode and the metal oxide semiconductor film are formed from a same film,
wherein a stack comprising the first insulating film, the second insulating film, and the third insulating film is interposed between the line and the pixel electrode,
wherein the first insulating film and the second insulating film sandwich the metal oxide semiconductor film, are respectively a first oxide insulating film and a second oxide insulating film, and are each in direct contact with the metal oxide semiconductor film,
wherein the third insulating film is a nitride insulating film and overlaps with the metal oxide semiconductor film,
wherein the second oxide insulating film is not provided in a region entirely overlapping with the first and the second capacitor electrodes,
wherein the nitride insulating film is on and in direct contact with the first capacitor electrode, and
wherein the second capacitor electrode is on and in direct contact with the nitride insulating film.

12. The semiconductor device according to claim 11 , wherein the first capacitor electrode contains a dopant at a concentration greater than 1×10 19 atoms/cm 3 and less than or equal to 1×10 22 atoms/cm 3 .

13. The semiconductor device according to claim 11 , further comprising an organic insulating film interposed between the second insulating film and the pixel electrode,
wherein the pixel electrode is in direct contact with the second insulating film through an opening in the organic insulating film.

14. The semiconductor device according to claim 11 , further comprising a capacitor line formed from a same film as the gate electrode,
wherein the first capacitor electrode is connected to the capacitor line through a film formed from a same film as a source electrode or a drain electrode of the transistor.

15. The semiconductor device according to claim 11 , further comprising a capacitor line,
wherein the semiconductor device is configured so that, when used, a potential applied to the capacitor line is constantly lower than a potential to be supplied to the pixel electrode by a threshold voltage of the capacitor or more.

16. A display device comprising the semiconductor device according to claim 11 .

17. An electronic device comprising the semiconductor device according to claim 11 .

18. A semiconductor device comprising:
a substrate;
a gate electrode and a line over the substrate, in non-overlapping regions;
a first insulating film over the substrate, the gate electrode, and the line;
a second insulating film over the first insulating film;
a third insulating film over the second insulating film;
a light-transmitting pixel electrode over the third insulating film;
a transistor comprising:
the gate electrode;
the first and the second insulating films over the gate electrode; and
a semiconductor film over the first and the second insulating films and overlapping the gate electrode, the semiconductor film being electrically connected to th

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Miyake Hiroyuki
• Shishido Hideaki
• Koyama Jun
• Matsubayashi Daisuke
• Murayama Keisuke

Classifications

• H10D86/481 Primary

  integrated with passive devices, e.g. auxiliary capacitors · CPC title

• H10D86/60 Primary

  wherein the TFTs are in active matrices · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title