Semiconductor module

Patent metadata

Field	Value
Publication number	US-9449893-B2
Application number	US-201213607872-A
Country	US
Kind code	B2
Filing date	Sep 10, 2012
Priority date	Jul 14, 2009
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

A semiconductor module includes a semiconductor chip having a switching function, a resin portion that covers the chip, terminals, and a heat dissipation portion. The resin portion includes first and second surfaces, which are opposed to each other and expand generally parallel to an imaginary plane; and a substrate is located on a first surface-side of the resin portion. The terminals project from the resin portion in a direction of the imaginary plane and are soldered onto the substrate. The heat dissipation portion is disposed on a second surface-side of the resin portion to release heat generated in the chip. One of the terminals is connected to the heat dissipation portion such that heat is transmitted from the one of the terminals to the heat dissipation portion.

First claim

What is claimed is:

1. A semiconductor module adapted to be packaged on a substrate, the semiconductor module comprising:
a semiconductor chip that has a switching function;
a resin portion that is formed to cover the semiconductor chip, wherein:
the resin portion includes a first surface side and a second surface side, which are opposed to each other and extend generally in parallel to an imaginary plane; and
the substrate is located on the first surface side of the resin portion;
a gate terminal, a source terminal, and a drain terminal that are bonded to the semiconductor chip and project from the resin portion in a direction of the imaginary plane and that are soldered onto the substrate; and
a heat dissipation portion that is disposed on the second surface side of the resin portion to release heat generated in the semiconductor chip, wherein:
both the source terminal and the drain terminal are physically directly connected to the heat dissipation portion; and
at least one particular terminal of the source terminal and the drain terminal is electrically connected directly to the heat dissipation portion,
wherein the heat dissipation portion parallel to the imaginary plane has a cross-sectional area, and the resin portion parallel to the imaginary plane has a cross-sectional area, and
wherein the cross-sectional area of the entire heat dissipation portion parallel to the imaginary plane is larger than the cross-sectional area of the entire resin portion parallel to the imaginary plane.

2. The semiconductor module according to claim 1 , wherein a thickness of the heat dissipation portion in a direction perpendicular to the imaginary plane is equal to or larger than a thickness of the resin portion in the direction perpendicular to the imaginary plane.

3. The semiconductor module according to claim 1 , wherein the heat dissipation portion includes an elongated groove on a surface of the heat dissipation portion, which is on an opposite side of the heat dissipation portion from the second surface side.

4. The semiconductor module according to claim 1 , wherein the heat dissipation portion is formed from a metallic material.

5. The semiconductor module according to claim 1 , wherein the gate terminal, the source terminal and the drain terminal are bonded to the semiconductor chip and project from a lateral side of the resin portion, and wherein the source terminal and the drain terminal are directly connected to the heat dissipation portion.

6. A semiconductor module adapted to be packaged on a substrate, the semiconductor module comprising:
a semiconductor chip that has a switching function;
a resin portion that is formed to cover the semiconductor chip, wherein:
the resin portion includes a first surface side and a second surface side, which are opposed to each other and extend generally in parallel to an imaginary plane; and
the substrate is located on the first surface side of the resin portion;
a gate terminal, a source terminal, and a drain terminal that are bonded to the semiconductor chip and project from the resin portion in a direction of the imaginary plane and that are soldered onto the substrate; and
a heat dissipation portion that is disposed on the second surface side of the resin portion to release heat generated in the semiconductor chip, wherein:
at least one of the source terminal and the drain terminal is connectable to the heat dissipation portion; and
at least one particular terminal of the source terminal and the drain terminal is electrically connected directly to the heat dissipation portion, wherein:
the heat dissipation portion includes two heat dissipation portions that are formed to be insulated from each other corresponding to the source terminal and the drain terminal respectively; and
the source terminal and the drain terminal are both physically directly connected to their corresponding heat dissipation portions,
wherein the heat dissipation portion parallel to the imaginary plane has a cross-sectional area, and the resin portion parallel to the imaginary plane has a cross-sectional area, and
wherein the cross-sectional area of the entire heat dissipation portion parallel to the imaginary plane is larger than the cross-sectional area of the entire resin portion parallel to the imaginary plane.

Assignees

• Oota Shinsuke
• Denso Corp

Inventors

• Oota Shinsuke

Classifications

• H10W90/00

  Package configurations · CPC title

• H10W76/134

  having other interconnections parallel to the conductive base · CPC title

• H10W70/481

  for devices being provided for in groups H10D8/00 - H10D48/00 · CPC title

• H10W40/778

  in encapsulations · CPC title

• H10W40/10 Primary

  Arrangements for heating · CPC title