Multi-gas centrally cooled showerhead design

US9449859B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9449859-B2
Application numberUS-201013500948-A
CountryUS
Kind codeB2
Filing dateOct 8, 2010
Priority dateOct 9, 2009
Publication dateSep 20, 2016
Grant dateSep 20, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method and apparatus for chemical vapor deposition and/or hydride vapor phase epitaxial deposition are provided. The apparatus generally include a lower bottom plate and an upper bottom plate defining a first plenum. The upper bottom plate and a mid-plate positioned above the upper bottom plate define a heat exchanging channel. The mid-plate and a top plate positioned above the mid-plate define a second plenum. A plurality of gas conduits extend from the second plenum through the heat exchanging channel and the first plenum. The method generally includes flowing a first gas through a first plenum into a processing region, and flowing a second gas through a second plenum into a processing region. A heat exchanging fluid is introduced to a heat exchanging channel disposed between the first plenum and the second plenum. The first gas and the second gas are then reacted to form a film on a substrate.

First claim

Opening claim text (preview).

I claim: 1. An apparatus, comprising: a lower bottom plate; an upper bottom plate positioned above the lower bottom plate, the upper bottom plate and the lower bottom plate defining a first plenum; a plurality of first gas conduits in fluid communication with the first plenum and a processing region of a process chamber; a mid-plate positioned above the upper bottom plate, the mid-plate and the upper bottom plate defining a heat exchanging channel for containing a heat exchanging fluid; a top plate positioned above the mid-plate, the top plate and the mid-plate defining a second plenum; and a plurality of second gas conduits in fluid communication with the second plenum and the processing region, the plurality of second gas conduits extending through the first plenum and the heat exchanging channel, and each of the first gas conduits enclosing one of the second gas conduits. 2. The apparatus of claim 1 , wherein each of the first gas conduits encloses one of the second gas conduits that is concentrically arranged therewith. 3. The apparatus of claim 1 , wherein the plurality of first and second gas conduits have a cylindrical configuration. 4. The apparatus of claim 1 , wherein the top plate includes a blocker plate positioned above the second plenum. 5. The apparatus of claim 4 , wherein the mid-plate and the upper bottom plate both have holes disposed therethrough, and wherein the plurality of second gas conduits are positioned within the holes of the mid-plate and the upper bottom plate. 6. The apparatus of claim 5 , wherein the top plate, the mid-plate, the upper bottom plate and the lower bottom plate comprise stainless steel, aluminum or nickel. 7. The apparatus of claim 6 , wherein the second gas conduits comprise aluminum. 8. An apparatus, comprising: a lower bottom plate; an upper bottom plate positioned above the lower bottom plate, the upper bottom plate and the lower bottom plate defining a first plenum; a mid-plate positioned above the upper bottom plate, the mid-plate and the upper bottom plate defining a heat exchanging channel for containing a heat exchanging fluid; a top plate positioned above the mid-plate, the top plate and the mid-plate defining a second plenum; and a plurality of first gas conduits in fluid communication with the second plenum and the processing region, the plurality of first gas conduits extending through the first plenum and the heat exchanging channel. 9. The apparatus of claim 8 , wherein the top plate, the mid-plate, the upper bottom plate, the lower bottom plate and the plurality of first gas conduits comprise stainless steel. 10. The apparatus of claim 9 , wherein the mid-plate and the upper bottom plate both have holes disposed therethrough, and wherein the plurality of first gas conduits are positioned within the holes of the mid-plate and the upper bottom plate. 11. The apparatus of claim 10 , further comprising a plurality of second gas conduits, wherein the first gas conduits and the second gas conduits are positioned in a hexagonal close pack orientation on a surface of the lower bottom plate. 12. The apparatus of claim 10 , further comprising a plurality of second gas conduits, wherein the first gas conduits and the second gas conduits form concentric circular arrays on a surface of the lower bottom plate.

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What does patent US9449859B2 cover?
A method and apparatus for chemical vapor deposition and/or hydride vapor phase epitaxial deposition are provided. The apparatus generally include a lower bottom plate and an upper bottom plate defining a first plenum. The upper bottom plate and a mid-plate positioned above the upper bottom plate define a heat exchanging channel. The mid-plate and a top plate positioned above the mid-plate defi…
Who is the assignee on this patent?
Song Eddy J, Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification H10P72/0436. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 20 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).