Method for manufacturing semiconductor device, method for processing substrate, substrate processing apparatus and recording medium
US-2015364318-A1 · Dec 17, 2015 · US
Interface adhesion improvement method
US9449809B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9449809-B2 |
| Application number | US-201313947032-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 20, 2013 |
| Priority date | Jul 20, 2012 |
| Publication date | Sep 20, 2016 |
| Grant date | Sep 20, 2016 |
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Abstract
Official abstract text for this publication.
The present disclosure describes methods of an interface adhesion improvement methods used on a transparent substrate for OLED or thin film transistor applications. In one embodiment, a method of forming a buffer layer on a surface of a substrate includes providing a substrate having an planarization material disposed thereon in a processing chamber, supplying a buffer layer gas mixture including a silicon containing gas into the processing chamber, controlling a substrate temperature less than about 100 degrees Celsius, forming a buffer layer on the planarization material, supplying an encapsulating barrier layer deposition gas mixture including a silicon containing gas and a nitrogen containing gas into the processing chamber, and forming an encapsulating barrier layer on the buffer layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a buffer layer on a surface of a substrate, comprising: providing a substrate having a planarization material disposed on an OLED device formed on the substrate in a processing chamber, wherein the planarization material is a polymer material substantially encapsulating entire structures of the OLED device; supplying a buffer layer gas mixture including a silicon containing gas into the processing chamber; controlling a substrate temp…
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Electricity · mapped topic
- C23C16/308Primary
Chemistry & Metallurgy · mapped topic
Cross-Sectional Technologies · mapped topic
Electricity · mapped topic
- H01L21/02107Primary
Electricity · mapped topic
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- What does patent US9449809B2 cover?
- The present disclosure describes methods of an interface adhesion improvement methods used on a transparent substrate for OLED or thin film transistor applications. In one embodiment, a method of forming a buffer layer on a surface of a substrate includes providing a substrate having an planarization material disposed thereon in a processing chamber, supplying a buffer layer gas mixture includi…
- Who is the assignee on this patent?
- Choi Young Jin, Chen Jrjyan Jerry, Park Beom Soo, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification C23C16/308. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Sep 20 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).