Program verify word line ramping delay for lower current consumption mode
US-2024395343-A1 · Nov 28, 2024 · US
US9449664B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9449664-B2 |
| Application number | US-201615074759-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 18, 2016 |
| Priority date | Jun 15, 2007 |
| Publication date | Sep 20, 2016 |
| Grant date | Sep 20, 2016 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A system including a processor and a memory device. The memory device includes a memory array having a plurality of memory elements connected to a bit-line and a quantizing circuit. The quantizing circuit includes a combination circuit configured to combine an analog input signal with an analog feedback signal to produce a delta signal. The quantizing circuit also includes an integrator configured to receive and integrate the delta signal to produce a sigma signal. The quantizing circuit also includes an analog-to-digital converter configured to receive the sigma signal and compare the sigma signal with a reference signal to produce a digital output signal.
Opening claim text (preview).
What is claimed is: 1. A system, comprising: a processor; and a memory device configured to receive command signals from the processor, wherein the memory device comprises: a memory array; and a quantizing circuit, wherein the quantizing circuit comprises: a combination circuit configured to combine an analog input signal with an analog feedback signal to produce a delta signal; an integrator configured to receive and integrate the delta signal to produce a sigma signal; and an analog-to-digital converter configured to receive the sigma signal and compare the sigma signal with a reference signal to produce a digital output signal. 2. The system of claim 1 , wherein the memory device comprises control circuitry configured to receive the command signals from the processor and to assert a clock signal within the memory device. 3. The system of claim 1 , wherein the quantizing circuit comprises a digital-to-analog converter configured to convert the digital output signal to the analog feedback signal. 4. The system of claim 3 , wherein the digital-to-analog converter comprises a current source and a switch. 5. The system of claim 1 , wherein the integrator comprises a capacitor. 6. The system of claim 1 , wherein the analog-to-digital converter comprises a comparator. 7. The system of claim 1 , wherein the combination circuit comprises a first voltage to current converter configured to convert the analog input signal to an analog input current. 8. The system of claim 7 , wherein the combination circuit comprises a second voltage to current converter configured to convert the analog feedback signal to an analog feedback current. 9. The system of claim 7 , wherein the first voltage to current converter comprises a transistor in series with a resistor. 10. The system of claim 1 , wherein the memory array comprises an internal data storage location coupled to the combination circuit, wherein the analog input signal is related to a value stored in the data storage location. 11. A system, comprising: a processor; and a memory device configured to receive command signals from the processor, wherein the memory device comprises: a memory array comprising a plurality of storage locations; and a quantizing circuit, wherein the quantizing circuit comprises: a combination circuit configured to combine an analog input signal related to a value stored in a data storage location of the plurality of storage locations, with an analog feedback signal to produce a delta signal; an integrator configured to receive and integrate the delta signal to produce a sigma signal; an analog-to-digital converter configured to receive the sigma signal and compare the sigma signal with a reference signal to produce a digital output signal; and a digital-to-analog converter configured to convert the digital output signal to the analog feedback signal. 12. The system of claim 11 , wherein the memory device comprises control circuitry configured to receive the command signals from the processor and to assert a clock signal within the memory device. 13. The system of claim 11 , wherein the digital-to-analog converter comprises a switch configured to selectively route a reference current to ground or to conductor coupled to the data storage location based on the digital output signal to generate the analog feedback signal. 14. The system of claim 11 , wherein the digital-to-analog converter comprises a switch coupled to a capacitor, wherein the switch is configured to selectively supplement a reference current with current from the capacitor based on the digital output signal to generate the analog feedback signal. 15. The system of claim 11 , wherein the data storage location comprises a floating gate transistor, a resistive memory element, a photo-diode, or a combination thereof. 16. The system of claim 11 , comprising a power supply configured to provide power to the processor and the memory device. 17. A method of sensing a memory element in a system, the method comprising: providing, from a processor, a read command signal to a memory device; determining, in a quantizing circuit of the memory device, a difference between a reference voltage and a voltage of an electrical conductor connected to a memory element of the memory device, wherein determining the difference comprises converting a voltage signal into a current signal; integrating, with an integrator of the quantizing circuit, the difference over time to determine a sum; and controlling the voltage of the electrical conductor by selectively conducting a reference current through the electrical conductor based on the sum. 18. The method of claim 17 , wherein determining the difference comprises generating the reference voltage by mirroring a current onto the electrical conductor. 19. The method of claim 17 , wherein controlling comprises processing the reference current with a low-pass filter. 20. The method of claim 17 , wherein determining a difference between a reference voltage and a voltage of an electrical conductor comprises determining a difference between the reference voltage and a bit-line voltage.
Differential amplifiers of latching type · CPC title
Multilevel memory comprising counting devices · CPC title
comprising amorphous/crystalline phase transition cells · CPC title
the quantiser being a single bit one · CPC title
Sensing or reading circuits; Data output circuits · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.