Memory chip package having optically and electrically connected chips, memory system having the same and driving method thereof

Patent metadata

Field	Value
Publication number	US-9449653-B2
Application number	US-201314094813-A
Country	US
Kind code	B2
Filing date	Dec 3, 2013
Priority date	Mar 14, 2013
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

A memory chip package includes memory chips stacked, electrically connected one another, and configured to input and output an optical signal through an optical line formed by a via penetrating the memory chips. The memory chips input and output optical signals with different wavelengths, and each of the memory chips has an optical-electrical converter configured to convert an optical signal with a corresponding wavelength into an electrical signal and to convert an electrical signal into an optical signal with the corresponding wavelength.

First claim

What is claimed is:

1. A memory chip package comprising:
a stack of memory chips electrically connected one another, the stack of the memory chips having a through-via extending therethrough, and the through-via constituting an optical path extending to and from each of the memory chips and the outside of the stack;
a logic chip atop which the memory chips are stacked and configured to drive the memory chip package, and
wherein each of the memory chips includes an optical-electrical converter which is operative to convert optical and electrical signals input thereto to corresponding electrical and optical signals, respectively, and a register programmable by an electrical signal input from an external device,
the register is configured to store at least one value corresponding to one or more respective wavelengths of an optical signal,
the memory chips are configured in such a way that an optical signal of the one or more respective wavelengths only can be transmitted from the optical path to each optical-electrical converter and such that among the memory chips the one or more respective wavelengths are different from each other, and
the logic chip is configured to receive and output an optical signal only of a wavelength different from each of those that can be transmitted from the optical path to the optical-electrical converters of the memory chips.

2. The memory chip package of claim 1 , wherein the optical path is constituted by free spaces extending through substrates of each of the memory chips.

3. The memory chip package of claim 1 , wherein the optical path is constituted by an optical substance buried in the through-via.

4. The memory chip package of claim 3 , wherein the optical path is constituted by an optical fiber.

5. The memory chip package of claim 1 , wherein the memory chips comprise optical couplings, respectively, that optically couple the optical-electrical converters of the memory chips to the optical path and configure the memory chips such that optical signals of different wavelengths only can be transmitted from the optical path to the optical-electrical converters, respectively.

6. The memory chip package of claim 1 , wherein the memory chips comprise semitransparent mirrors, respectively, that optically couple the optical-electrical converters of the memory chips to the optical path and configure the memory chips such that optical signals of different wavelengths only can be transmitted from the optical path to the optical-electrical converters, respectively.

7. The memory chip package of claim 1 , further comprising:
an interposer optically or electrically interconnecting the memory chips and the logic chip.

8. The memory chip package of claim 5 , wherein the register of each of the memory chips is operatively connected to the optical coupling of the memory chip to configure the optical coupling based on the at least one value.

9. The memory chip package of claim 8 , wherein the optical coupling of each of the memory chips is a wavelength division demultiplexer/multiplexer.

10. The memory chip package of claim 1 , wherein a wavelength of an optical signal used at a read operation of each memory chip is different from a wavelength of an optical signal used at a write operation of each memory chip.

11. The memory chip package of claim 1 , wherein a wavelength of an optical signal used as data of each memory chip is different from a wavelength of an optical signal used as a command/address of each memory chip.

12. The memory chip package of claim 1 , wherein at least one of the memory chips comprises a volatile memory device.

13. The memory chip package of claim 1 , wherein at least one of the memory chips comprises a nonvolatile memory device.

14. The memory chip package of claim 8 , wherein each of the memory chips has an electrically conductive via therethrough electrically connected to the register of the memory chip, whereby the register of each of the memory chips is programmable by an electrical signal input from an external device to the electrically conductive vias.

15. The memory chip package of claim 14 , wherein the logic chip has an electrically conductive via extending between the first and second sides of the logic chip and electrically connected to the electrically conductive vias of the memory chips.

16. A memory chip package comprising:
a stack of memory chips electrically connected one another, the stack of the memory chips having a through-via extending therethrough, and the through-via constituting an optical path extending to and from each of the memory chips and the outside of the stack; and
a logic chip atop which the memory chips are stacked and configured to drive the memory chip package,
wherein each of the memory chips has an optical-electrical converter which is operative to convert optical and electrical signals input thereto to corresponding electrical and optical signals, respectively,
the memory chips are configured in such a way that an optical signal of one or more respective wavelengths only can be transmitted from the optical path to each optical-electrical converter and such that among the memory chips the one or more respective wavelengths are different from each other, and
wherein the logic chip is configured to receive and output an optical signal only of a wavelength different from each of those that can be transmitted from the optical path to the optical-electrical converters of the memory chips.

Assignees

• Kim Jeong-Kyoum
• Song Indal
• Choi Junghwan
• Samsung Electronics Co Ltd

Inventors

• Kim Jeong-Kyoum
• Song Indal
• Choi Junghwan

Classifications

• H10W90/293

  characterised by non-galvanic coupling between the chips, e.g. capacitive coupling · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/722

  between stacked chips · CPC title

• H10W90/297

  characterised by the through-semiconductor vias [TSVs] in the stacked chips · CPC title

• H10W90/295

  optical coupling · CPC title