Method for manufacturing magnetic recording medium, and magnetic recording/reproducing apparatus

Patent metadata

Field	Value
Publication number	US-9449632-B2
Application number	US-201213432931-A
Country	US
Kind code	B2
Filing date	Mar 28, 2012
Priority date	Mar 30, 2011
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

A method for manufacturing a magnetic recording medium including at least a non-magnetic substrate, a soft magnetic underlayer, an orientation control layer that controls an orientation of an immediate upper layer, and a perpendicular magnetic layer in which a magnetization easy axis is mainly perpendicularly oriented with respect to the non-magnetic substrate so as to be laminated one another on the non-magnetic substrate. The perpendicular magnetic layer includes two or more magnetic layers, and each layer is subjected to a crystal growth such that each crystal grain composing each magnetic layer forms a columnar crystal continuous in a thickness direction together with the crystal grains composing the orientation control layer. The orientation control layer, formed of a Co—Cr alloy, is formed by the reactive sputtering using a mixture of a sputtering gas and nitrogen.

First claim

What is claimed is:

1. A method for manufacturing a magnetic recording medium comprising at least a non-magnetic substrate, a soft magnetic underlayer, an orientation control layer that controls an orientation of an immediate upper layer, and a perpendicular magnetic layer in which a magnetization easy axis is mainly perpendicularly oriented with respect to the non-magnetic substrate so as to be laminated one another on the non-magnetic substrate, characterized in that:
the perpendicular magnetic layer includes two or more magnetic layers, and each layer is subjected to a crystal growth such that each crystal grain composing each magnetic layer forms a columnar crystal continuous in a thickness direction together with the crystal grains composing the orientation control layer, wherein
the orientation control layer, formed of a Co—Cr alloy, is formed by reactive sputtering using a mixture of a sputtering gas and nitrogen, thereby causing the nitrogen to be doped in the crystal grains of the Co—Cr alloy within a range from 3 atomic % to 15 atomic %, and
wherein, in a corrugated surface in which a top part of each columnar crystal composing the orientation control layer is formed into a convex, a height from the topmost part of each columnar crystal to a boundary with the next columnar crystal is set to a value of an outer diameter or less of the columnar crystal.

2. The method for manufacturing the magnetic recording medium according to claim 1 , wherein the Co—Cr alloy contains Co within a range from 50 atomic % to 80 atomic % and Cr within a range from 20 atomic % to 50 atomic %.

3. The method for manufacturing the magnetic recording medium according to claim 1 , wherein the Co—Cr alloy contains at least one or more elements selected from Pt, B, Ta, Mo, Cu, Nd, W, Nb, Sm, Tb, Ru, and Re within a range from 1 atomic % to 10 atomic %.

4. The method for manufacturing the magnetic recording medium according to claim 1 , wherein the crystal grains composing the orientation control layer are set to have a grain diameter of 5 nm or less.

5. The method for manufacturing the magnetic recording medium according to claim 1 , wherein a Ru layer or a second orientation control layer containing Ru as a main component is formed on the orientation control layer.

6. The method for manufacturing the magnetic recording medium according to claim 1 , wherein the magnetic layer or the non-magnetic layer has a granular structure.

7. A magnetic recording/reproducing apparatus, comprising:
a magnetic recording medium manufactured by the manufacturing method according to claim 1 , and
a magnetic head for performing recording and reproducing of information with respect to the magnetic recording medium.

Assignees

• Irisawa Toshikazu
• Hashimoto Atsushi
• Showa Denko Kk

Inventors

• Irisawa Toshikazu
• Hashimoto Atsushi

Classifications

• C23C14/165

  by cathodic sputtering · CPC title

• G11B5/656

  containing Co (containing inorganic, non-oxide compounds of Si, N, P, B, H or C G11B5/657; containing oxygen G11B5/658) · CPC title

• C23C14/0036 Primary

  Reactive sputtering · CPC title

• G11B5/7325 Primary

  Physics · mapped topic

• C23C14/0042

  Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements · CPC title