Organic light emitting display

US9449553B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9449553-B2
Application numberUS-201414221092-A
CountryUS
Kind codeB2
Filing dateMar 20, 2014
Priority dateMay 12, 2005
Publication dateSep 20, 2016
Grant dateSep 20, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An organic light emitting display (OLED) is disclosed. The OLED includes a storage capacitor formed in a first region of the substrate, a thin film transistor formed in a second region of the substrate, a first data line capacitor formed in a third region of the substrate, an organic light emitting diode formed on the storage capacitor and the thin film transistor, and a second data line capacitor formed on the data line capacitor.

First claim

Opening claim text (preview).

What is claimed is: 1. An organic light emitting display (OLED) comprising: a substrate; a storage capacitor region, a thin film transistor region, and a data line capacitor region each formed on the substrate; a storage capacitor formed in the storage capacitor region, the storage capacitor comprising: a first semiconductor layer formed on the substrate; a gate insulating layer formed on the first semiconductor layer; a first electrode formed on the gate insulating layer; an interlayer insulating layer formed on the first electrode; and a second electrode formed on the interlayer insulating layer, wherein the second electrode is electrically connected to the first semiconductor layer; a thin film transistor formed in the thin film transistor region, the thin film transistor comprising: a second semiconductor layer formed on the substrate; a gate insulating layer formed on the second semiconductor layer; a gate electrode formed on the gate insulating layer; a source electrode formed on the gate insulating layer; and a drain electrode formed on the gate insulating layer; a first data line capacitor formed in the data line capacitor region, the first data line capacitor comprising: a third semiconductor layer formed on the substrate; a gate insulating layer formed on the third semiconductor layer; an interlayer insulating layer formed on the gate insulating layer; and a data line formed on the interlayer insulating layer not electrically coupled to the third semiconductor layer; an organic light emitting diode formed on the storage capacitor and the thin film transistor and comprising: a pixel electrode connected to one of the source and drain electrodes; an organic emission layer formed on the pixel electrode; and an opposite electrode formed on the storage capacitor, the thin film transistor, and the first data line capacitor; and a second data line capacitor formed on the first data line capacitor, the second data line capacitor comprising: the data line; an insulating layer formed over the data line; and the pixel electrode not electrically coupled to the data line. 2. The OLED according to claim 1 , wherein the insulating layer of the second data line capacitor comprises a passivation layer comprising at least one of a silicon oxide (SiO 2 ) layer, a silicon nitride (SiN X ) layer, and a multi-layer thereof. 3. The OLED according to claim 1 , wherein a third data line capacitor comprises the first and second data line capacitors. 4. The OLED according to claim 1 , wherein the insulating layer of the second data line capacitor comprises a planarization layer, comprising at least one of a benzocyclobutene (BCB) layer, a polyimide layer, and a polyacryl layer. 5. The OLED according to claim 4 , wherein a third data line capacitor comprises the first and second data line capacitors. 6. The OLED according to claim 5 , wherein the third data line capacitor has a larger capacitance than the storage capacitor. 7. The OLED according to claim 6 , wherein the third data line capacitor has a capacitance of about 20 pF to about 50 pF. 8. The OLED according to claim 7 , wherein the capacitance of the third data line capacitor depends at least in part on at least one of the size of a contact hole, the size of a via hole, and the thickness of at least one of the passivation layer, the planarization layer, and the pixel defining layer.

Assignees

Inventors

Classifications

  • Active-matrix OLED [AMOLED] displays · CPC title

  • used for counteracting undesired variations, e.g. feedback or autozeroing · CPC title

  • being a dynamic memory with more than one capacitor · CPC title

  • Electricity · mapped topic

  • forming a memory circuit, e.g. a dynamic memory with one capacitor · CPC title

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What does patent US9449553B2 cover?
An organic light emitting display (OLED) is disclosed. The OLED includes a storage capacitor formed in a first region of the substrate, a thin film transistor formed in a second region of the substrate, a first data line capacitor formed in a third region of the substrate, an organic light emitting diode formed on the storage capacitor and the thin film transistor, and a second data line capaci…
Who is the assignee on this patent?
Samsung Display Co Ltd
What technology area does this patent fall under?
Primary CPC classification G09G3/3233. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Sep 20 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).