Single diaphragm transducer structure

Patent metadata

Field	Value
Publication number	US-9448126-B2
Application number	US-201414198609-A
Country	US
Kind code	B2
Filing date	Mar 6, 2014
Priority date	Mar 6, 2014
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

A transducer structure including a carrier with an opening and a suspended structure mounted on the carrier which extends at least partially over the opening in the carrier is disclosed. The transducer structure may further include configuring the suspended structure to provide an electrostatic field between the suspended structure and the carrier by changing a distance between the suspended structure and the carrier. Alternatively, the suspended structure may be configured to change the distance between the suspended structure and the carrier in response to an electrostatic force provided between the suspended structure and the carrier.

First claim

What is claimed is:

1. A transducer structure, comprising:
a carrier comprising a non-suspended electrode;
a suspended structure mounted on the carrier and extending at least partially over the non-suspended electrode, the suspended structure comprising at least a suspended electrode;
at least one void formed through a portion of the suspended structure;
wherein the non-suspended electrode and the suspended electrode are configured to provide an electrostatic force between the non-suspended electrode and the suspended electrode to change the distance between the suspended structure and the carrier; or wherein the non-suspended electrode and the suspended electrode are configured to change the distance between the non-suspended electrode and the suspended electrode in response to a change in an electrostatic force provided between the non-suspended electrode and the suspended electrode, and
a tensioning structure, wherein the tensioning structure is configured to cause a portion of the suspended structure containing the at least one void to deflect such that the suspended structure forms an arch-like structure over the carrier.

2. The transducer structure of claim 1 , further comprising: an opening formed through a portion of the carrier.

3. The transducer structure of claim 2 , wherein at least a portion of the suspended structure extends over the opening in the carrier.

4. The transducer structure of claim 1 , further comprising: a tensioning structure disposed over a surface of the suspended structure and configured to cause a deflection of the suspended structure in at least a first direction.

5. The transducer structure of claim 1 , further comprising: a spacer structure configured to mount the suspended structure to the carrier.

6. The transducer structure of claim 1 , further comprising: a conductive layer disposed over a surface of the carrier and arranged to detect the electrostatic field or to generate the electrostatic force.

7. The transducer structure of claim 1 , wherein the suspended structure comprises a diaphragm structure.

8. The transducer structure of claim 1 , wherein the carrier comprises a micro-electro-mechanical system.

9. The transducer structure of claim 1 , wherein the at least one void is arranged at an edge region of the suspended structure.

10. The transducer structure of claim 1 , wherein the at least one void does not extend through a central portion of the suspended structure.

11. The transducer structure of claim 10 , wherein the central portion of the suspended structure is disposed over and substantially parallel to an opening formed through a portion of the carrier.

12. A transducer structure, comprising:
a carrier;
a suspended structure mounted on the carrier;
at least one void formed through a portion of the suspended structure; and
a tensioning structure disposed over a surface of the suspended structure and configured to cause a deflection of the suspended structure in at least a first direction;
wherein the suspended structure is configured to provide an electrostatic field between at least a portion of the suspended structure and the carrier by changing a distance between the suspended structure and the carrier; or wherein the suspended structure is configured to change the distance between the suspended structure and the carrier in response to an electrostatic force provided between a portion of the suspended structure and the carrier, and
wherein the tensioning structure is configured to cause a portion of the suspended structure containing the at least one void to deflect such that the suspended structure forms an arch-like structure over the carrier.

13. The transducer structure of claim 12 , further comprising:
an opening formed through a portion of the carrier.

14. The transducer structure of claim 13 ,
wherein at least a portion of the suspended structure extends over the opening in the carrier.

15. The transducer structure of claim 12 , further comprising:
a conductive layer disposed over a surface of the carrier and arranged to detect the electrostatic field or to generate the electrostatic force.

16. A transducer structure, comprising:
a carrier comprising a non-suspended electrode;
a suspended structure mounted on the carrier and extending at least partially over the non-suspended electrode, the suspended structure comprising at least a suspended electrode;
at least one void formed through a portion of the suspended structure;
a tensioning structure, wherein the tensioning structure is configured to cause a portion of the suspended structure containing the at least one void to cause the portion of the suspended structure to deflect in a substantially sine-wave shape;
wherein the non-suspended electrode and the suspended electrode are configured to provide an electrostatic force between the non-suspended electrode and the suspended electrode to change the distance between the suspended structure and the carrier; or wherein the non-suspended electrode and the suspended electrode are configured to change the distance between the non-suspended electrode and the suspended electrode in response to a change in an electrostatic force provided between the non-suspended electrode and the suspended electrode.

17. A transducer structure, comprising:
a carrier;
a suspended structure mounted on the carrier;
at least one void formed through a portion of the suspended structure; and
a tensioning structure disposed over a surface of the suspended structure and configured to cause a deflection of the suspended structure in at least a first direction;
wherein the suspended structure is configured to provide an electrostatic field between at least a portion of the suspended structure and the carrier by changing a distance between the suspended structure and the carrier; or wherein the suspended structure is configured to change the distance between the suspended structure and the carrier in response to an electrostatic force provided between a portion of the suspended structure and the carrier, and
wherein the tensioning structure is configured to cause a portion of the suspended structure containing the at least one void to cause the portion of the suspended structure to deflect in a substantially sine-wave shape.

Assignees

• Infineon Technologies Ag

Inventors

• Dehe Alfons
• Glacer Christoph

Classifications

• G01L9/0042 Primary

  Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms (details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively) · CPC title

• G01R29/12

  Measuring electrostatic fields {or voltage-potential} · CPC title

• G01L9/0073

  using a semiconductive diaphragm · CPC title

• G01L1/14 Primary

  by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators · CPC title

• H04R19/005 Primary

  using semiconductor materials · CPC title