Silicone resin, resin composition, resin film, semiconductor device, and making method

Patent metadata

Field	Value
Publication number	US-9447305-B2
Application number	US-201514918080-A
Country	US
Kind code	B2
Filing date	Oct 20, 2015
Priority date	Oct 30, 2014
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

A silicone resin comprising constitutional units represented by formula (1) and having a Mw of 3,000-500,000 contains 10-50 wt % of (A-1) a first silicone resin having a silicone content of 10-40 wt % and (A-2) a second silicone resin having a silicone content of 50-80 wt %. A resin composition comprising the silicone resin can be formed in film form, and it possesses satisfactory covering or encapsulating performance to large size/thin wafers. The resin composition or resin film ensures satisfactory adhesion, low warpage, and wafer protection. The resin film is useful in wafer-level packages.

First claim

The invention claimed is:

1. A silicone resin comprising constitutional units represented by the compositional formula (1) and having a weight average molecular weight of 3,000 to 500,000, containing (A-1) a first silicone resin having a silicone content of 10 to 40% by weight of the first silicone resin, and (A-2) a second silicone resin having a silicone content of 50 to 80% by weight of the second silicone resin, the weight content of first silicone resin (A-1) being 10 to 50% by weight of the total weight of the silicone resin,

wherein R 1 to R 4 are each independently a monovalent C 1 -C 8 hydrocarbon group, excluding that R 3 and R 4 are methyl at the same time, m and n each are an integer of 0 to 300, a and b are positive numbers, a+b=1, X is a divalent linking group having the general formula (2) or (3),
c indicative of moles of the group of formula (2) and d indicative of moles of the group of formula (3) are in the range of 0/1≦d/c≦1/1,

wherein V is a divalent organic group selected from the following:

p is 0 or 1, R 5 is hydrogen or methyl, f is an integer of 0 to 7, R 6 and R 7 are each independently C 1 -C 4 alkyl or alkoxy, h is 0, 1 or 2,

wherein R 3 and R 4 are each independently a monovalent C 1 -C 8 hydrocarbon group, excluding that R 3 and R 4 are methyl at the same time, q and r each are an integer of 0 to 300, R 8 is hydrogen or methyl, and k is an integer of 0 to 7.

2. A resin composition comprising
(A) the silicone resin of claim 1 ,
(B) an epoxy resin curing agent, and
(C) a filler.

3. The resin composition of claim 2 wherein component (B) is an amine, phenol or acid anhydride based curing agent.

4. The resin composition of claim 2 wherein 5 to 50 parts by weight of component (B) is present per 100 parts by weight of component (A), and component (C) is present in a weight fraction of 30 to 90% by weight of the total weight of the composition.

5. The resin composition of claim 2 , further comprising an epoxy resin cure accelerator.

6. The resin composition of claim 2 , further comprising an epoxy resin.

7. The resin composition of claim 2 wherein component (C) is silica.

8. A resin film comprising the resin composition of claim 2 .

9. A method for preparing a resin film, comprising the steps of:
coating the resin composition of claim 2 onto a release or protective film to form a precursor including a resin layer,
optionally applying another release or protective film to the resin layer,
providing at least two such precursors,
stripping the release or protective film from each precursor to bare the resin layer, and
joining the bare resin layers to each other.

10. A method for manufacturing semiconductor devices, comprising the steps of:
attaching the resin film of claim 8 to a semiconductor wafer to cover the wafer with the resin film, and
singulating the covered wafer into discrete devices.

11. A semiconductor device obtained from singulation of a semiconductor wafer which is covered with a film which is prepared by heat curing the resin film of claim 8 .

Assignees

• Shinetsu Chemical Co

Inventors

• Kondo Kazunori
• ICHIOKA Yoichiro
• Kato Hideto

Classifications

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10W74/476 Primary

  Organic materials comprising silicon · CPC title

• B29L2031/34

  Electrical apparatus, e.g. sparking plugs or parts thereof · CPC title

• C09D183/14

  in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms (C09D183/10 takes precedence) · CPC title

• B29C66/45

  Joining of substantially the whole surface of the articles (methods or apparatus for laminating B32B37/00) · CPC title