Solid-state image sensor and camera system

Patent metadata

Field	Value
Publication number	US-9445024-B2
Application number	US-201414579378-A
Country	US
Kind code	B2
Filing date	Dec 22, 2014
Priority date	Jan 31, 2012
Publication date	Sep 13, 2016
Grant date	Sep 13, 2016

Abstract

Provided is a solid-state image sensor including a pixel array portion formed from a two-dimensional array of ordinary imaging pixels each having a photoelectric conversion unit and configured to output an electric signal obtained through photoelectric conversion as a pixel signal, and focus detection pixels for detecting focus. The focus detection pixels include at least a first focus detection pixel and a second focus detection pixel each having a photoelectric conversion unit and configured to transfer and output an electric signal obtained through photoelectric conversion to an output node. The first focus detection pixel and the second focus detection pixel share the output node. The first focus detection pixel includes a first photoelectric conversion unit, and a first transfer gate for reading out an electron generated through photoelectric conversion in the first photoelectric conversion unit to the shared output node.

First claim

What is claimed is:

1. An image sensor comprising:
a plurality of focus detection pixels for detecting focus, wherein the focus detection pixels include at least a first focus detection pixel and a second focus detection pixel each having a photoelectric conversion unit, wherein an output node of the first focus detection pixel is connected to an output node of the second focus detection pixel; and
a plurality of imaging pixels each having a photoelectric conversion unit,
wherein,
the first focus detection pixel includes (a) a first photoelectric conversion unit, and (b) a first transfer transistor connected between the first photoelectric conversion unit and the output node of the first focus detection pixel,
the second focus detection pixel includes (a) a second photoelectric conversion unit, and (b) a second transfer transistor connected between the second photoelectric conversion unit and the output node of the second focus detection pixel,
a gate of the first transfer transistor and a gate of the second transfer transistor are electrically connected through a connection electrode,
the imaging pixels share, with at least two pixels, an output node to which an electron generated through photoelectric conversion is transferred,
the imaging pixels each have transfer gates such that the two pixels transfer to the shared output node,
each of the transfer gates is subjected to conduction control by an individual transfer control signal, and
the first transfer gate of the first focus detection pixel and the second transfer gate of the second focus detection pixel are subjected to conduction control concurrently and in parallel by the transfer control signal.

2. The image sensor according to claim 1 , wherein the first focus detection pixel and the second focus detection pixel have parts of light incident areas shielded at which light is incident on the photoelectric conversion units.

3. The image sensor according to claim 1 , wherein the connection electrode has an “[” shape in planar view.

4. The image sensor according to claim 1 , wherein the imaging pixels have a larger aperture size than an aperture size of the focus detection pixels.

5. The image sensor according to claim 1 , wherein the focus detection pixels include a pixel for which a color filter is not provided.

6. The image sensor according to claim 1 , wherein:
a color filter is provided for the plurality of the image pixels, and
a color filter is not provided for one of the first focus detection pixel or the second focus detection pixel.

7. The image sensor according to claim 1 , wherein:
a color filter is provided for the plurality of the image pixels, and
color filters having a same color are provided for the first focus detection pixel and the second focus detection pixel.

8. A camera system comprising the image sensor according to claim 1 .

9. An image sensor comprising:
a plurality of focus detection pixels for detecting focus, wherein the focus detection pixels include at least a first focus detection pixel and a second focus detection pixel; and
a plurality of imaging pixels each having a photoelectric conversion unit,
wherein,
the first focus detection pixel includes (a) a first photoelectric conversion unit, and (b) a first transfer transistor connected between the first photoelectric conversion unit and an output node,
the second focus detection pixel includes (a) a second photoelectric conversion unit, and (b) a second transfer transistor connected between the second photoelectric conversion unit and the output node,
a gate of the first transfer transistor and a gate of the second transfer transistor are electrically connected through a connection electrode,
the imaging pixels share, with at least two pixels, an output node to which an electron generated through photoelectric conversion is transferred,
the imaging pixels each have transfer gates such that the two pixels transfer to the shared output node,
each of the transfer gates is subjected to conduction control by an individual transfer control signal, and
the first transfer gate of the first focus detection pixel and the second transfer gate of the second focus detection pixel are subjected to conduction control concurrently and in parallel by the transfer control signal.

10. The image sensor according to claim 9 , wherein the first focus detection pixel and the second focus detection pixel have parts of light incident areas shielded at which light is incident on the photoelectric conversion units.

11. The image sensor according to claim 9 , wherein the connection electrode has an “[” shape in planar view.

12. The image sensor according to claim 9 , wherein the imaging pixels have a larger aperture size than an aperture size of the focus detection pixels.

13. The image sensor according to claim 9 , wherein the focus detection pixels include a pixel for which a color filter is not provided.

14. The image sensor according to claim 9 , wherein:
a color filter is provided for the plurality of the image pixels, and
a color filter is not provided for one of the first focus detection pixel or the second focus detection pixel.

15. The image sensor according to claim 9 , wherein:
a color filter is provided for the plurality of the image pixels, and
color filters having a same color are provided for the first focus detection pixel and the second focus detection pixel.

16. A camera system comprising the image sensor according to claim 9 .

Assignees

• Sony Corp

Inventors

• Yamashita Kazuyoshi

Classifications

• H04N25/134

  based on three different wavelength filter elements · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H04N25/778

  comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself · CPC title

• H04N25/704 Primary

  Pixels specially adapted for focusing, e.g. phase difference pixel sets · CPC title

• H04N23/672

  based on the phase difference signals · CPC title