High bandwidth amplifier

Patent metadata

Field	Value
Publication number	US-9444413-B2
Application number	US-201514432759-A
Country	US
Kind code	B2
Filing date	Feb 4, 2015
Priority date	Feb 4, 2015
Publication date	Sep 13, 2016
Grant date	Sep 13, 2016

Abstract

An amplifier ( 100 ) comprising:
first, second, third and fourth transistors (M 1 , M 2 , M 3 , M 4 ), an input ( 10 ) for an input signal, and a first output ( 22 ) for a first amplified signal; a first terminal (T 11 ) of the first transistor (M 1 ) coupled to a first voltage rail ( 12 ), a second terminal (T 12 ) of the first transistor (M 1 ) coupled to a first terminal (T 31 ) of the third transistor (M 3 ), and a gate (G 1 ) of the first transistor (M 1 ) coupled to the input ( 10 ); a first terminal (T 21 ) of the second transistor (M 2 ) coupled to a second voltage rail ( 14 ), a second terminal (T 22 ) of the second transistor (M 2 ) coupled to the first output ( 22 ), and a gate (G 2 ) of the second transistor (M 2 ) coupled to the input ( 10 ); a load ( 40 ) coupled between a second terminal (T 32 ) of the third transistor (M 3 ) and a third voltage rail ( 20 ), and a gate (G 3 ) of the third transistor (M 3 ) coupled to a bias node ( 16 ) for applying a bias voltage to the gate (G 3 ) of the third transistor (M 3 ); a first terminal (T 41 ) of the fourth transistor (M 4 ) coupled to the first output ( 22 ), a second terminal (T 42 ) of the fourth transistor (M 4 ) coupled to a fourth voltage rail ( 24 ), and a gate (G 4 ) of the fourth transistor (M 4 ) coupled to the second terminal (T 32 ) of the third transistor (M 3 ); and a first capacitive element (C 1 ) coupled between the second terminal (T 32 ) of the third transistor (M 3 ) and the first output ( 22 ).

First claim

The invention claimed is:

1. An amplifier, comprising:
a first transistor, a second transistor, a third transistor, and a fourth transistor;
an input for an input signal, and a first output for a first amplified signal;
a first terminal of the first transistor coupled to a first voltage rail, a second terminal of the first transistor coupled to a first terminal of the third transistor, and a gate of the first transistor coupled to the input;
a first terminal of the second transistor coupled to a second voltage rail, a second terminal of the second transistor coupled to the first output, and a gate of the second transistor coupled to the input;
a load coupled between a second terminal of the third transistor and a third voltage rail, and a gate of the third transistor coupled to a bias node for applying a bias voltage to the gate of the third transistor;
a first terminal of the fourth transistor coupled to the first output, a second terminal of the fourth transistor coupled to a fourth voltage rail, and a gate of the fourth transistor coupled to the second terminal of the third transistor; and
a first capacitive element coupled between the second terminal of the third transistor and the first output.

2. The amplifier of claim 1 , wherein the load comprises a first resistive element.

3. The amplifier of claim 1 , wherein the load comprises an active bias circuit.

4. The amplifier of claim 1 , wherein the second transistor is a duplicate of the first transistor.

5. The amplifier of claim 1 , wherein the load has an impedance exceeding the reciprocal of a transconductance of the fourth transistor.

6. The amplifier of claim 1 , wherein the first capacitive element has a first capacitance that is variable.

7. The amplifier of claim 1 , comprising an output stage coupled to the first output.

8. The amplifier of claim 7 :
wherein the output stage presents a load capacitance between the first output and a fifth voltage rail; and
wherein the first capacitive element has a first capacitance arranged such that the sum of the first capacitance and an input capacitance of the fourth transistor between the gate of the fourth transistor and the first output is equal, within plus or minus twenty percent, to the load capacitance.

9. The amplifier of claim 7 :
wherein the amplifier further comprises a second output; and
wherein the output stage comprises:
a second resistive element coupled between a first terminal of a fifth transistor and the fifth voltage rail;
a second terminal of the fifth transistor coupled to the second output;
a gate of the fifth transistor coupled to the first output;
a second capacitive element coupled between the input and the first terminal of the fifth transistor; and
a third resistive element coupled between the input and the first terminal of the fifth transistor.

10. The amplifier of claim 9 , wherein the first, second, third, fourth, and fifth transistors are each one of a bipolar junction transistor (BJT) and a field effect transistor (FET).

11. The amplifier of claim 1 , wherein the first, second, third, and fourth transistors are each one of a bipolar junction transistor (BJT) and a field effect transistor (FET).

12. A receiver, comprising:
an amplifier, wherein the amplifier comprises:
a first transistor, a second transistor, a third transistor, and a fourth transistor;
an input for an input signal, and a first output for a first amplified signal;
a first terminal of the first transistor coupled to a first voltage rail, a second terminal of the first transistor coupled to a first terminal of the third transistor, and a gate of the first transistor coupled to the input;
a first terminal of the second transistor coupled to a second voltage rail, a second terminal of the second transistor coupled to the first output, and a gate of the second transistor coupled to the input;
a load coupled between a second terminal of the third transistor and a third voltage rail, and a gate of the third transistor coupled to a bias node for applying a bias voltage to the gate of the third transistor;
a first terminal of the fourth transistor coupled to the first output, a second terminal of the fourth transistor coupled to a fourth voltage rail, and a gate of the fourth transistor coupled to the second terminal of the third transistor; and
a first capacitive element coupled between the second terminal of the third transistor and the first output.

13. The receiver of claim 12 :
wherein the amplifier has an output stage coupled to the first output;
wherein the output stage presents a load capacitance between the first output and a fifth voltage rail; and
wherein the first capacitive element has a first capacitance arranged such that the sum of the first capacitance and an input capacitance of the fourth transistor between the gate of the fourth transistor and the first output is equal, within plus or minus twenty percent, to the load capacitance.

14. The receiver of claim 12 :
wherein the amplifier has an output stage coupled to the first output;
wherein the amplifier further comprises a second output; and
wherein the output stage comprises:
a second resistive element coupled between a first terminal of a fifth transistor and the fifth voltage rail;
a second terminal of the fifth transistor coupled to the second output;
a gate of the fifth transistor coupled to the first output;
a second capacitive element coupled between the input and the first terminal of the fifth transistor; and
a third resistive element coupled between the input and the first terminal of the fifth transistor.

15. A mobile communication device, comprising:
a receiver having an amplifier, wherein the amplifier comprises:
a first transistor, a second transistor, a third transistor, and a fourth transistor;
an input for an input signal, and a first output for a first amplified signal;
a first terminal of the first transistor coupled to a first voltage rail, a second terminal of the first transistor coupled to a first terminal of the third transistor, and a gate of the first transistor coupled to the input;
a first terminal of the second transistor coupled to a second voltage rail, a second terminal of the second transistor coupled to the first output, and a gate of the second transistor coupled to the input;
a load coupled between a second terminal of the third transistor and a third voltage rail, and a gate of the third transistor coupled to a bias node for applying a bias voltage to the gate of the third transistor;
a first terminal of the fourth transistor coupled to the first output, a second terminal of the fourth transistor coupled to a fourth voltage rail, and a gate of the fourth transistor coupled to the second terminal of the third transistor; and
a first capacitive element coupled between the second terminal of the third transistor and the first output.

16. The mobile communication device of claim 15 :
wherein the amplifier has an output stage coupled to the first output;
wherein the output stage presents a load capacitance between the first output and a fifth voltage rail; and
wherein the first capacitive element has a first capacitance arranged such that the sum of the first capacitance and an input capacitance of the fourth transistor between the gate of the fourth transistor and the first output is equal, within plus or minus twenty percent, to the load capacitance.

17. The mobile communication device of claim 15 :
wherein the amplifier has an output stage coupled to the first output;
wherein the amplifier further comprises

Assignees

• Ericsson Telefon Ab L M
• ERICSSON TELEFON AB L M (publ)

Inventors

• Mastantuono Daniele
• Mattisson Sven

Classifications

• H03F2200/36

  the amplifier comprising means for increasing the bandwidth · CPC title

• H03F1/42 Primary

  Modifications of amplifiers to extend the bandwidth · CPC title

• H03F2200/451

  the amplifier being a radio frequency amplifier · CPC title

• H03F3/605

  Distributed amplifiers · CPC title

• H03F3/68

  Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics {(power amplifiers using a combination of several semiconductor amplifiers H03F3/211; combinations of amplifiers using coupling networks with distributed constants H03F3/602)} · CPC title