Method of manufacturing a Ti:sapphire crystal fiber by laser-heated pedestal growth

US9444216B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9444216-B2
Application numberUS-201314073077-A
CountryUS
Kind codeB2
Filing dateNov 6, 2013
Priority dateAug 27, 2010
Publication dateSep 13, 2016
Grant dateSep 13, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present invention relates to a crystal fiber, and more particularly to a Ti: sapphire crystal fiber, a manufacturing method thereof, and a wide band light source with the same. The Ti: sapphire single crystal is grown by means of laser-heated pedestal growth (LHPG) method into a crystal fiber of a predetermined diameter. The as-grown crystal fiber is annealed for enhancing its fluorescence and reducing the infra-red residual absorption. The annealed crystal fiber is inserted into a glass capillary and is grown into a single-clad crystal fiber. The wide band light source comprises: a pumping source for providing a pumping light; a single-clad Ti: sapphire crystal fiber for absorbing the pumping light and emitting the wide band light.

First claim

Opening claim text (preview).

The invention claimed is: 1. A manufacturing method of a Ti: sapphire crystal fiber, comprising: providing a Ti: sapphire single crystal rod; growing said single crystal rod into a crystal fiber having a predetermined diameter by means of LHPG method; annealing said crystal fiber; providing a glass capillary into which said crystal fiber is placed; and growing said crystal fiber covered inside said glass capillary into a single cladding Ti: sapphire crystal fiber by means of LHPG method. 2. The manufacturing method according to claim 1 , wherein said step of growing the single crystal rod into the crystal fiber having the predetermined diameter comprises growing with diameter reduction several times. 3. The manufacturing method according to claim 1 , wherein said predetermined diameter is less than 50 μm. 4. The manufacturing method according to claim 1 , wherein said step of annealing is performed selectively by furnace annealing or laser annealing. 5. The manufacturing method according to claim 4 , wherein said laser annealing comprises: providing a capillary with a predetermined softening point, and placing said crystal fiber into said capillary with high softening point; sealing one end of said capillary with a predetermined softening point, and filling the vacuum at the other end thereof; focusing a laser beam onto said crystal fiber, so as to heat it until a predetermined temperature is reached; and moving said capillary with a predetermined softening point together with said crystal fiber so as to allow each part of said crystal fiber to pass through the focal point of said laser beam. 6. The manufacturing method according to claim 5 , wherein said capillary with a predetermined softening point is refilled with hydrogen and inert gas after the vacuum is filled at the other end thereof, so as to be laser annealed in a controlled reducing atmosphere. 7. The manufacturing method according to claim 5 , wherein said capillary with a predetermined softening point is selected from a quartz glass capillary or a quartz capillary. 8. The manufacturing method according to claim 1 , wherein said glass capillary is a borosilicate capillary. 9. The manufacturing method according to claim 1 , wherein said glass capillary is made of optical glass having a softening point lower than 1000° C.

Assignees

Inventors

Classifications

  • Fibre compositions (per se C03C13/04)or doping with active elements (lasing materials in general H01S3/14) · CPC title

  • by irradiation or electric discharge · CPC title

  • Heating of the molten zone · CPC title

  • Optical fibres with cladding {with or without a coating} · CPC title

  • Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal · CPC title

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What does patent US9444216B2 cover?
The present invention relates to a crystal fiber, and more particularly to a Ti: sapphire crystal fiber, a manufacturing method thereof, and a wide band light source with the same. The Ti: sapphire single crystal is grown by means of laser-heated pedestal growth (LHPG) method into a crystal fiber of a predetermined diameter. The as-grown crystal fiber is annealed for enhancing its fluorescence …
Who is the assignee on this patent?
Univ Nat Taiwan
What technology area does this patent fall under?
Primary CPC classification H01S3/1636. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 13 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).