Low temperature high strength metal stack for die attachment

Patent metadata

Field	Value
Publication number	US-9443903-B2
Application number	US-201213361569-A
Country	US
Kind code	B2
Filing date	Jan 30, 2012
Priority date	Jun 30, 2006
Publication date	Sep 13, 2016
Grant date	Sep 13, 2016

Abstract

A light emitting diode structure includes a diode region and a metal stack on the diode region. The metal stack includes a barrier layer on the diode region and a bonding layer on the barrier layer. The barrier layer is between the bonding layer and the diode region. The bonding layer includes gold, tin and nickel. A weight percentage of tin in the bonding layer is greater than 20 percent and a weight percentage of gold in the bonding layer is less than about 75 percent. A weight percentage of nickel in the bonding layer may be greater than 10 percent.

First claim

What is claimed is:

1. A packaged light emitting diode, comprising:
a package surface;
a semiconductor light emitting diode mounted on the package surface; and
a metal stack on the light emitting diode, the metal stack comprising a bonding layer on the light emitting diode that contacts the package surface and provides mechanical attachment of the light emitting diode to the package surface;
wherein the bonding layer includes gold, tin and nickel, and wherein a weight percentage of tin in the bonding layer is greater than 40 percent, a weight percentage of nickel in the bonding layer is greater than 10 percent, and a weight percentage of gold in the bonding layer is less than 10 percent.

2. The packaged light emitting diode of claim 1 , wherein a thickness of the bonding layer is at least 2.5 microns.

3. The packaged light emitting diode of claim 2 , wherein the entire metal stack is less than 6 microns thick.

4. The packaged light emitting diode of claim 1 , wherein the weight percentage of tin in the bonding layer is between 75 and 80 percent.

5. The packaged light emitting diode of claim 1 , wherein the weight percentage of nickel in the bonding layer is greater than 15 percent.

6. The packaged light emitting diode of Claim 1 , wherein the weight percentage of nickel in the bonding layer is greater than 20 percent.

7. The packaged light emitting diode of Claim 1 , wherein the weight percentage of tin in the bonding layer is less than 80 percent.

8. The packaged light emitting diode of claim 1 , wherein the weight percentage of gold the bonding layer is less than 5 percent.

9. The packaged light emitting diode of claim 1 , wherein the weight percentage of gold the bonding layer is less than 2 percent.

10. The packaged light emitting diode of claim 1 , wherein the metal stack further comprises a barrier layer, and wherein the entire metal stack contains gold in an amount of less than 5 percent by weight.

11. The packaged light emitting diode of claim 1 , wherein the bonding layer comprises a metal alloy that is more than 90 percent nickel and tin by weight.

12. The packaged light emitting diode of claim 1 , wherein the bonding layer comprises a metal alloy that is more than 95 percent nickel and tin by weight.

13. The packaged light emitting diode of claim 1 , wherein the bonding layer comprises a metal alloy that is more than 97 percent nickel and tin by weight.

14. The packaged light emitting diode of claim 1 , wherein the bonding layer comprises an alloy that is thermally stable at temperatures up to 260 degrees centigrade.

15. The packaged light emitting diode of claim 1 , wherein the bonding layer comprises an alloy that is thermally stable at temperatures up to 290 degrees centigrade.

16. The packaged light emitting diode of claim 1 , wherein the bonding layer comprises an alloy that is thermally stable at temperatures up to 310 degrees centigrade.

17. The packaged light emitting diode of claim 1 , wherein the light emitting diode further comprising a substrate and a diode region on the substrate, wherein the metal stack is on the diode region opposite the substrate and bonds the diode region to the package surface.

18. The packaged light emitting diode of claim 1 , wherein the light emitting diode further comprising a substrate and a diode region on the substrate, wherein the metal stack is on the substrate opposite the diode region and bonds the substrate to the package surface.

19. A light emitting diode structure comprising:
a light emitting active portion formed of epitaxial layers; a carrier substrate for supporting the active portion;
a bonding layer that predominates in nickel and tin joining the active portion to the carrier substrate; and
a barrier layer between the bonding layer and the epitaxial layers, the barrier layer being formed of a material and having a thickness sufficient to reduce the formation or migration of free metals or alloys that have melting points lower than 300 degrees centigrade;
wherein the bonding layer includes gold, tin and nickel, and wherein a weight percentage of tin in the bonding layer is at least 70 percent, a weight percentage of gold in the bonding layer is less than 10 percent, and a weight percentage of nickel in the bonding layer is at least 10 percent.

20. A light emitting diode structure comprising:
a diode region; and
a metal stack on the diode region, the metal stack comprising a barrier layer on the diode region and a bonding layer on the barrier layer, wherein the barrier layer is between the bonding layer and the diode region;
wherein the bonding layer includes gold, tin and nickel, and wherein a weight percentage of tin in the bonding layer is between 70 percent and 80 percent, a weight percentage of gold in the bonding layer is less than 5 percent, and a weight percentage of nickel in the bonding layer is at least 15 percent.

21. A light emitting diode structure comprising:
a diode region; and
a metal stack on the diode region, the metal stack comprising a barrier layer on the diode region and a bonding layer on the barrier layer, wherein the barrier layer is between the bonding layer and the diode region;
wherein the bonding layer includes gold, tin and nickel, and wherein a weight percentage of tin in the bonding layer is at least 70 percent, a weight percentage of gold in the bonding layer is less than 10 percent, and a weight percentage of nickel in the bonding layer is at least 10 percent.

22. A light emitting diode structure comprising;
a diode region; and
a metal stack on the diode region, the metal stack comprising a bonding layer including a layer of nickel and a layer of tin,
wherein an initial melt temperature of the bonding layer is less than 230 degrees centigrade; and
wherein the layer of tin has a thickness of at least 2000 nm.

23. The light emitting diode structure of claim 22 , wherein the bonding layer further comprises a layer of gold.

24. The light emitting diode structure of claim 22 ,
wherein the metal stack further comprises a barrier layer and an adhesion layer that comprise metals other than gold, tin and nickel.

25. The light emitting diode of claim 24 , wherein the adhesion layer comprises titanium and the barrier layer comprises platinum, and wherein the bonding layer further comprises gold.

26. The light emitting diode of claim 25 , wherein the titanium adhesion layer is on the diode region, the platinum barrier layer is on the titanium adhesion layer, and the layer of nickel is on the platinum barrier layer.

27. The light emitting diode of claim 22 ,
wherein metals in the bonding layer form an alloy that is thermally stable at temperatures up to 260 degrees centigrade.

28. The light emitting diode of claim 22 , wherein metals in the bonding layer form an alloy that is thermally stable at temperatures up to 290 degrees centigrade.

29. The light emitting diode of claim 22 , wherein metals in the bonding layer form an alloy that is thermally stable at temperatures up to 310 degrees centigrade.

30. The packaged light emitting diode of claim 1 , wherein the weight percentage of tin in the bonding layer is greater than 60 percent.

31. The light emitting diode structure of claim 19 , wherein a thickness of the bonding layer is at least 2500 nm.

32. The light emitting di

Assignees

• Bergmann Michael John
• Williams Christopher D
• Schneider Kevin Shawne
• Haberern Kevin
• Donofrio Matthew
• Cree Inc

Inventors

• Bergmann Michael John
• Williams Christopher D
• Schneider Kevin Shawne
• Haberern Kevin
• Donofrio Matthew

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/753

  between laterally-adjacent chips · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title