Electronic component and method

Patent metadata

Field	Value
Publication number	US-9443787-B2
Application number	US-201313963461-A
Country	US
Kind code	B2
Filing date	Aug 9, 2013
Priority date	Aug 9, 2013
Publication date	Sep 13, 2016
Grant date	Sep 13, 2016

Abstract

An electronic component includes a high-voltage depletion-mode transistor, a low-voltage enhancement-mode transistor arranged adjacent and spaced apart from the high-voltage depletion-mode transistor, and an electrically conductive member electrically coupling a first current electrode of the high-voltage depletion-mode transistor to a first current electrode of the low-voltage enhancement-mode transistor. The electrically conductive member has a sheet-like form.

First claim

What is claimed is:

1. An electronic component, comprising:
a high-voltage depletion-mode transistor;
a low-voltage enhancement-mode transistor arranged laterally adjacent and spaced apart from the high-voltage depletion-mode transistor; and
an electrically conductive member electrically coupling a first current electrode of the high-voltage depletion-mode transistor to a first current electrode of the low-voltage enhancement-mode transistor, the electrically conductive member having a sheet-like form,
wherein the high-voltage depletion-mode transistor comprises a first side comprising the first current electrode, a second current electrode and a control electrode,
wherein the low-voltage enhancement-mode transistor comprises a first side comprising a second current electrode and a control electrode and a second side opposing the first side, the second side comprising the first current electrode of the low-voltage enhancement-mode transistor,
wherein the electrically conductive member extends between the first current electrode of the high-voltage depletion-node transistor and the first current electrode of the low-voltage enhancement-mode transistor, and
wherein the second current electrode of the low-voltage enhancement-mode transistor is mounted on a die pad and the control electrode of the low-voltage enhancement-mode transistor is mounted on a lead spaced at a distance from the die pad.

2. The electronic component of claim 1 , wherein the electrically conductive member bridges a gap between the first current electrode of the high-voltage depletion-mode transistor and the first current electrode of the low-voltage enhancement-mode transistor.

3. The electronic component of claim 1 , wherein the electrically conductive member is a contact clip.

4. The electronic component of claim 1 , wherein the electrically conductive member is the die pad.

5. The electronic component of claim 1 , wherein the electrically conductive member provides a node of one of a cascode circuit and a half-bridge circuit.

6. The electronic component of claim 1 , further comprising a package enclosing both the high-voltage depletion-mode transistor and the low-voltage enhancement-mode transistor.

7. The electronic component of claim 6 , wherein the package further comprises a plurality of leads spaced apart from the die pad.

8. The electronic component of claim 7 , wherein the high-voltage depletion-mode transistor is mounted on the die pad and the low-voltage enhancement-mode transistor is mounted at least partially on the die pad.

9. The electronic component of claim 7 , wherein the second current electrode of the high-voltage depletion-mode transistor is electrically connected to one of the plurality of leads spaced apart from the die pad by a contact clip.

10. The electronic component of claim 1 , wherein the control electrode of the high-voltage depletion-mode transistor is connected to the die pad by a bond wire.

11. The electronic component of claim 1 , wherein the high-voltage depletion-mode transistor further comprises a least one via electrically connected to the first current electrode and to a third electrode at a rear side of the high-voltage depletion-mode transistor, the third electrode being mounted on and electrically connected to the die pad, the first current electrode of the low-voltage enhancement-mode transistor being mounted on, and electrically connected to the die pad.

12. The electronic component of claim 1 , wherein the high-voltage depletion-mode transistor is one of a Group III-N transistor, a Group III-N HEMT and a SiC transistor.

13. The electronic component of claim 1 , wherein the low-voltage enhancement-mode transistor is afield effect transistor.

14. The electronic component of claim 1 , wherein the low-voltage enhancement-mode transistor comprises a vertical drift path.

15. An electronic component, comprising:
a high-voltage depletion-mode transistor;
a low-voltage enhancement-mode transistor arranged adjacent and spaced apart from the high-voltage depletion-mode transistor; and
an electrically conductive member electrically coupling a first current electrode of the high-voltage depletion-mode transistor to a first current electrode of the low-voltage enhancement-mode transistor, the electrically conductive member having a sheet-like form,
wherein the high-voltage depletion-mode transistor comprises a first side comprising the first current electrode, a second current electrode and a control electrode, wherein the low-voltage enhancement-mode transistor comprises a first side comprising a second current electrode and a control electrode and a second side opposing the first side, the second side comprising the first current electrode of the low-voltage enhancement-mode transistor, and
wherein the second current electrode of the low-voltage enhancement-mode transistor is mounted on a die pad and the control electrode of the low-voltage enhancement-mode transistor is mounted on a lead spaced at a distance from the die pad.

16. An electronic component, comprising:
a high-voltage depletion-mode transistor;
a low-voltage enhancement-mode transistor arranged laterally adjacent and spaced apart from the high-voltage depletion-mode transistor; and
an electrically conductive member electrically coupling a first current electrode of the high-voltage depletion-mode transistor to a first current electrode of the low-voltage enhancement-mode transistor, the electrically conductive member having a sheet-like form,
wherein the high-voltage depletion-mode transistor comprises a first side comprising the first current electrode, a second current electrode and a control electrode,
wherein the low-voltage enhancement-mode transistor comprises a first side comprising the first current electrode of the low-voltage enhancement-mode transistor and a control electrode and a second side comprising a second current electrode, the second side opposing the first side,
wherein the low-voltage enhancement-mode transistor is a p-MOSFET, and
wherein the second current electrode of the low-voltage enhancement-mode transistor is mounted on a die pad.

Assignees

• Infineon Technologies Austria Ag

Inventors

• Otremba Ralf
• Schiess Klaus
• Häberlen Oliver

Classifications

• H10W72/637

  Multiple strap connectors having different shapes · CPC title

• H10W72/07652

  changes in structures or sizes · CPC title

• H10W72/627

  Multiple strap connectors having different structures or shapes · CPC title

• H10W72/07653

  changes in shapes · CPC title

• H10W90/763

  between laterally-adjacent chips · CPC title