Methods of forming a substrate opening

Patent metadata

Field	Value
Publication number	US-9443756-B2
Application number	US-201514674447-A
Country	US
Kind code	B2
Filing date	Mar 31, 2015
Priority date	May 29, 2013
Publication date	Sep 13, 2016
Grant date	Sep 13, 2016

Abstract

A method of forming a substrate opening includes forming a plurality of side-by-side openings in a substrate. At least some of immediately adjacent side-by-side openings are formed in the substrate to different depths relative one another. Walls that are laterally between the side-by-side openings are removed to form a larger opening having a non-vertical sidewall surface where the walls were removed in at least one straight-line vertical cross-section that passes through the sidewall surface orthogonally to the removed walls.

First claim

The invention claimed is:

1. A method of forming a substrate opening, comprising:
forming a plurality of side-by-side openings in a substrate, at least some of immediately adjacent side-by-side openings being formed in the substrate to different depths relative one another; and
removing walls that are laterally between the side-by-side openings to form a larger opening having a non-vertical sidewall surface where the walls were removed in at least one straight-line vertical cross-section that passes through the sidewall surface orthogonally to the removed walls, the non-vertical sidewall surface being formed to be straight-linear along substantially all of its length along the at least one straight-line vertical cross-section to an elevationally outermost surface of the substrate.

2. The method of claim 1 wherein each immediately adjacent side-by-side opening having the walls there-between is of different depth in the substrate relative each other.

3. The method of claim 2 wherein all side-by-side openings having the walls there-between are of different depths relative one another.

4. A method of forming a substrate opening, comprising:
forming a plurality of side-by-side openings in a substrate, at least some of immediately adjacent side-by-side openings being formed in the substrate to different depths relative one another; and
removing walls that are laterally between the side-by-side openings to form a larger opening having a laterally-outermost non-vertical sidewall surface where the walls were removed in at least one straight-line vertical cross-section that passes through the laterally-outermost sidewall surface orthogonally to the removed walls, the laterally-outermost non-vertical sidewall surface being formed to extend from a deepest point of the larger opening to have a combination of at least two differently angled non-vertical straight-linear sections.

5. A method of forming a substrate opening, comprising:
forming a plurality of side-by-side openings in a substrate using masking material that is directly against the substrate, at least some of immediately adjacent side-by-side openings being formed in the substrate to different depths relative one another; and
removing walls below the masking material that are laterally between the side-by-side openings to form a larger opening having a non-vertical sidewall surface where the walls were removed in at least one straight-line vertical cross-section that passes through the sidewall surface orthogonally to the removed walls, the larger opening being larger below the masking material than it was before removing the walls, the non-vertical sidewall surface extending to an elevationally outermost surface of the substrate that is immediately below the masking material.

6. A method of forming a substrate opening, comprising:
forming a plurality of side-by-side openings in a substrate, at least some of immediately adjacent side-by-side openings being formed in the substrate to different depths relative one another; and
removing walls that are laterally between the side-by-side openings to form a larger opening having a non-vertical sidewall surface where the walls were removed in at least one straight-line vertical cross-section that passes through the sidewall surface orthogonally to the removed walls, the substrate openings having the walls there-between being formed to individually have multiple different maximum outermost open dimensions, and the larger opening is formed to have a non-horizontal base surface orthogonal to the one straight-line vertical cross-section.

7. The method of claim 6 wherein the substrate openings having the walls there-between that individually have multiple different maximum outermost open dimensions are individual trapezoidal in shape.

8. A method of forming a substrate opening, comprising:
forming a plurality of side-by-side openings in a substrate, at least some of immediately adjacent side-by-side openings being formed in the substrate to different depths relative one another; and
removing walls that are laterally between the side-by-side openings to form a larger opening having a non-vertical sidewall surface where the walls were removed in at least one straight-line vertical cross-section that passes through the sidewall surface orthogonally to the removed walls, the forming comprising etching and the removing comprising etching, the etching of the forming and the etching of the removing comprising a single continuous etching step from the forming through the removing, the non-vertical sidewall surface being formed to be curved along substantially all of its length along the at least one straight-line vertical cross-section, the non-vertical sidewall surface being formed to be convex.

9. A method of forming a substrate opening, comprising:
forming a plurality of side-by-side openings in a substrate, at least some of immediately adjacent side-by-side openings being formed in the substrate to different depths relative one another; and
removing walls that are laterally between the side-by-side openings to form a larger opening having a non-vertical sidewall surface where the walls were removed in at least one straight-line vertical cross-section that passes through the sidewall surface orthogonally to the removed walls, the non-vertical sidewall surface being formed to be entirely convex.

10. The method of claim 9 wherein each immediately adjacent side-by-side opening having the walls there-between is of different depth in the substrate relative each other.

11. The method of claim 10 wherein all side-by-side openings having the walls there-between are of different depths relative one another.

12. The method of claim 9 wherein the plurality of side-by-side openings having walls there-between are sub-micron, and the larger opening is sub-micron.

13. The method of claim 9 wherein all of the substrate openings having the walls there-between are formed to be longitudinally elongated orthogonal to the straight-line vertical cross section.

14. The method of claim 9 wherein at least one of the substrate openings having the walls there-between is formed to not be longitudinally elongated.

15. A method of forming a substrate opening, comprising:
forming a plurality of side-by-side openings in a substrate, at least some of immediately adjacent side-by-side openings being formed in the substrate to different depths relative one another; and
removing walls that are laterally between the side-by-side openings to form a larger opening having a non-vertical sidewall surface where the walls were removed in at least one straight-line vertical cross-section that passes through the sidewall surface orthogonally to the removed walls, the non-vertical sidewall surface being formed to be convex and extend to an elevationally outermost surface of the substrate.

Assignees

• Micron Technology Inc

Inventors

• Kiehlbauch Mark

Classifications

• H10P50/693

  characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane · CPC title

• H10P50/691

  for Group V materials or Group III-V materials · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/268

  of silicon-containing layers · CPC title

• H10P50/267

  using plasmas · CPC title