Method of manufacturing semiconductor device for forming film including at least two different elements

Patent metadata

Field	Value
Publication number	US-9443719-B2
Application number	US-201615082156-A
Country	US
Kind code	B2
Filing date	Mar 28, 2016
Priority date	Nov 26, 2008
Publication date	Sep 13, 2016
Grant date	Sep 13, 2016

Abstract

Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes the first element by supplying a first gas that includes the first element to the substrate in a process vessel; and
(b) forming a second layer that includes the first element and the second element by supplying a second gas that includes the second element to the substrate in the process vessel to modify the first layer,
wherein pressure in the process vessel in one process of (a) and (b) is controlled to be higher than pressure in the process vessel in the one process when the film having a stoichiometric composition is formed, or pressure in the process vessel in the other process of (a) and (b) is controlled to be lower than pressure in the process vessel in the other process when the film having the stoichiometric composition is formed, so as to form the film having a composition where one of the first and second elements is excessive as compared with the other in terms of the stoichiometric composition, and
wherein the first layer includes a discontinuous layer.

2. The method of claim 1 , wherein a time of supplying the gas in one process of (a) and (b) is controlled to be longer than a time of supplying the gas in the one process when the film having a stoichiometric composition is formed, or a time of supplying the gas in the other process of (a) and (b) is controlled to be shorter than a time of supplying the gas in the other process when the film having the stoichiometric composition is formed, so as to form the film having a composition where one of the first and second elements is excessive as compared with the other in terms of the stoichiometric composition.

3. The method of claim 1 , wherein the second gas is plasma-excited or thermally-excited and supplied to the substrate in (b).

4. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate, the film including a first element, a second element different from the first element, and a third element different from the first and the second elements, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes the first element by supplying a first gas that includes the first element to the substrate in a process vessel;
(b) forming a second layer that includes the first element and the second element by supplying a second gas that includes the second element to the substrate in the process vessel to form a layer that includes the second element on the first layer or to modify the first layer; and
(c) forming a third layer that includes the first element, the second element, and the third element by supplying a third gas that includes the third element to the substrate in the process vessel to modify the second layer,
wherein pressure in the process vessel in one process of (a), (b), and (c) is controlled to be higher than pressure in the process vessel in the one process when the film having a stoichiometric composition is formed, or pressure in the process vessel in the other process of (a), (b), and (c) is controlled to be lower than pressure in the process vessel in the other process when the film having the stoichiometric composition is formed, so as to form the film having a composition where one of the first to third elements is excessive as compared with the others in terms of the stoichiometric composition, and
wherein the first layer includes a discontinuous layer.

5. The method of claim 4 , wherein a time of supplying the gas in one process of (a), (b), and (c) is controlled to be longer than a time of supplying the gas in the one process when the film having a stoichiometric composition is formed, or a time of supplying the gas in the other process of (a), (b), and (c) is controlled to be shorter than a time of supplying the gas in the other process when the film having the stoichiometric composition is formed, so as to form the film having a composition where one of the first to third elements is excessive as compared with the others in terms of the stoichiometric composition.

6. The method of claim 4 , wherein the second gas and the third gas are plasma-excited or thermally-excited and supplied to the substrate in (b) and (c), respectively.

7. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate, the film including a first element, a second element different from the first element, a third element different from the second element, and a fourth element different from the first and the third elements, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes the first element by supplying a first gas that includes the first element to the substrate in a process vessel;
(b) forming a second layer that includes the first element and the second element by supplying a second gas that includes the second element to the substrate in the process vessel to form a layer that includes the second element on the first layer or to modify the first layer;
(c) forming a third layer that includes the first element, the second element, and the third element by supplying a third gas that includes the third element to the substrate in the process vessel to form a layer that includes the third element on the second layer or to modify the second layer; and
(d) forming a fourth layer that includes the first element, the second element, the third element, and the fourth element by supplying a fourth gas that includes the fourth element to the substrate in the process vessel to modify the third layer,
wherein pressure in the process vessel in one process of (a), (b), (c), and (d) is controlled to be higher than pressure in the process vessel in the one process when the film having a stoichiometric composition is formed, or pressure in the process vessel in the other process of (a), (b), (c), and (d) is controlled to be lower than pressure in the process vessel in the other process when the film having the stoichiometric composition is formed, so as to form the film having a composition where one of the first to fourth elements is excessive as compared with the others in terms of the stoichiometric composition, and
wherein the first layer includes a discontinuous layer.

8. The method of claim 7 , wherein a time of supplying the gas in one process of (a), (b), (c), and (d) is controlled to be longer than a time of supplying the gas in the one process when the film having a stoichiometric composition is formed, or a time of supplying the gas in the other process of (a), (b), (c), and (d) is controlled to be shorter than a time of supplying the gas in the other process when the film having the stoichiometric composition is formed, so as to form the film having a composition where one of the first to fourth elements is excessive as compared with the others in terms of the stoichiometric composition.

9. The method of claim 7 , wherein the second gas, the third gas, and the fourth gas are plasma-excited or thermally-excited and supplied to the substrate in (b), (c), and (d), respectively.

Assignees

• Hitachi-Kokusai Electric Inc
• Hitachi Int Electric Inc

Inventors

• Takasawa Yushin
• Karasawa Hajime
• Hirose Yoshiro

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title