EUV-mirror arrangement, optical system with EUV-mirror arrangement and associated operating method

Patent metadata

Field	Value
Publication number	US-9442383-B2
Application number	US-201314034069-A
Country	US
Kind code	B2
Filing date	Sep 23, 2013
Priority date	Mar 23, 2011
Publication date	Sep 13, 2016
Grant date	Sep 13, 2016

Abstract

An EUV mirror arrangement ( 100 ) has a multiplicity of mirror elements ( 110, 111, 112 ) which are arranged alongside one another and jointly form a mirror surface of the mirror arrangement. Each mirror element has a substrate ( 120 ) and a multilayer arrangement ( 130 ) applied on the substrate and having a reflective effect with respect to radiation from the extreme ultraviolet range (EUV), said multilayer arrangement comprising a multiplicity of layer pairs ( 135 ) having alternate layers composed of a high refractive index layer material and a low refractive index layer material. The multilayer arrangement has an active layer ( 140 ) arranged between a radiation entrance surface and the substrate and consisting of a piezoelectrically active layer material, the layer thickness (z) of which active layer can be altered by the action of an electric field. For each active layer provision is made of an electrode arrangement for generating an electric field acting on the active layer.

First claim

The invention claimed is:

1. A mirror arrangement for extreme ultraviolet (EUV) radiation comprising a multiplicity of mirror elements which are arranged alongside one another and jointly form a mirror surface of the mirror arrangement, wherein each mirror element comprises:
a substrate,
a multilayer arrangement applied on the substrate and having a reflective effect with respect to the EUV radiation, said multilayer arrangement comprising:
a multiplicity of layer pairs having alternate layers composed of a high refractive index layer material and a low refractive index layer material, and
an active layer arranged between a radiation entrance surface and the substrate and consisting of a piezoelectrically active layer material, the layer thickness of which active layer alters by action of an electric field; and

for each active layer, a respective electrode arrangement configured to generate an electric field acting on the active layer,

wherein the multilayer arrangement has a first layer group arranged between the radiation entrance surface and the active layer and having a first number N1 of layer pairs, and a second layer group arranged between the active layer and the substrate and having a second number N2 of layer pairs, wherein the numbers N1 and N2 of layer pairs of the first layer group and of the second layer group are configured such that, for at least one angle of incidence of the radiation impinging on the radiation entrance surface, the first layer group transmits a portion of the incident radiation through the active layer to the second layer group and the radiation reflected by the multilayer arrangement contains a first portion reflected by the first layer group and a second portion reflected by the second layer group.

2. The EUV mirror arrangement according to claim 1 , wherein the active layer, in the absence of an electric field, has a layer thickness configured such that for a reference angle of incidence of the incident radiation a reflectivity of the multilayer arrangement is altered by a maximum of 20% by applying an electric field.

3. The EUV mirror arrangement according to claim 1 , wherein the piezoelectrically active layer material substantially consists of barium titanate (BaTiO 3 ).

4. The EUV mirror arrangement according to claim 1 , wherein at least one of the following conditions holds true:
10< N 1<30  (1)

15< N 2<50  (2)

30<( N 1+ N 2)<70 and N 1>10 and N 2>10  (3)

N 1≦ N 2  (4)

z≧ 2 nm  (5)

z≦ 35 nm  (6)

Δ z≧ 0.1 nm  (7)

0.15 nm≦Δ z≦ 2 nm,  (8)

where z is the layer thickness of the active layer and Δz is a change in layer thickness produced by the generated electric field.

5. The EUV mirror arrangement according to claim 1 , wherein the electrode arrangement has a first electrode layer and a second electrode layer, and the active layer is arranged between the electrode layers.

6. The EUV mirror arrangement according to claim 1 , wherein the electrode arrangement, for driving the active layer has an electrode layer, wherein the electrode layer is a structured layer electrode and is subdivided into a plurality of electrode segments which lie alongside one another and are electrically insulated from one another, and wherein each of the electrode segments covers only a fraction of a total cross-sectional area of the mirror element.

7. The EUV mirror arrangement according to claim 6 , wherein the electrode arrangement comprises a common electrode opposite to the structured layer electrode, the common electrode extending over at least a plurality of mirror elements.

8. The EUV mirror arrangement according to claim 7 , wherein the common electrode is formed on a radiation incidence side of the active layer, opposite to the substrate side of the active layer, and wherein the common electrode arranged on the radiation incidence side comprises a plurality of single layers stacked on top of each other to form a multilayer.

9. The EUV mirror arrangement according to claim 6 , wherein at least one of:
at least one electrode layer is a PLD layer applied by pulsed laser deposition (PLD), and
an electrode layer consists of an electrically conductive ceramic material.

10. The EUV mirror arrangement according to claim 1 , wherein the active layer is a PLD layer applied by pulsed laser deposition (PLD).

11. The EUV mirror arrangement according to claim 1 , wherein the piezoelectrically active layer material is selected from the group consisting of: Ba(Sr,Zr)TiO 3 , Bi(Al,Fe)O 3 , (Bi,Ga)O 3 , (Bi,Sc)O 3 , CdS, (Li,Na, K) (Nb,Ta)O 3 , Pb(Cd,Co,Fe,In,Mg,Ni,Sc,Yb,Zn,Zr) (Nb,W,Ta,Ti)O 3 , ZnO, ZnS or contains at least one material of this group in combination with at least one other material.

12. An optical system comprising at least one EUV mirror arrangement as claimed in claim 1 .

13. The optical system according to claim 12 , wherein the optical system is an illumination system or a projection lens of a micrography projection exposure apparatus.

14. The optical system according to claim 13 , wherein the EUV mirror arrangement is arranged in a beam path of the illumination system between a light source and an illumination field to be illuminated in or near a field plane situated optically conjugate with respect to a plane of the illumination field.

15. The optical system according to claim 14 , wherein, the layer thickness of the active layer is altered, for at least a plurality of the mirror elements of the mirror arrangement, in a location-dependent manner such that the reflectivity of a mirror element is set and varied in a location-dependent manner.

16. The optical system according to claim 12 , wherein the EUV mirror arrangement is arranged in the region of a pupil plane of the illumination system, wherein the pupil plane is situated Fourier-transformed with respect to the plane of the illumination field.

17. A method for operating an optical system comprising at least one EUV mirror arrangement as claimed in claim 1 , comprising varying a local reflectivity distribution over the mirror surface of the EUV mirror arrangement in a location-dependent manner by selectively driving at least individual ones of the active layers of the mirror elements.

18. The method according to claim 17 , further comprising detuning the layer period by changing the layer thickness of the active layer.

19. The method according to claim 18 , wherein the layer period is detuned for at least one of:
adapting the reflectivity to a central wavelength of the radiation from deviating from a desired value, and
adapting the reflectivity to an altered angle-of-incidence distribution at the mirror arrangement.

20. A mirror arrangement for extreme ultraviolet (EUV) radiation comprising a multiplicity of mirror elements which are arranged alongside one another and jointly form a mirror surface of the mirror arrangement, wherein each mirror element comprises:
a substrate,
a multilayer arrangement applied on the substrate and having a reflective effect with respect to the EUV radiation, said multilayer arrangement comprising:
a multiplicity of layer pairs having alternate layers composed of a high refractive index layer material and a low refractive index layer material, and
an active layer arranged between a radiation entrance surface and the substrate and consisting of a piezoelectrically active layer material, the layer thickness of which active layer alters by action of an electric field; and

for each active layer, a respective electrode arrangement configured to

Assignees

• Zeiss Carl Smt Gmbh

Inventors

• Dinger Udo
• Bijkerk Frederik
• Bayraktar Muharrem
• Dier Oliver

Classifications

• G21K1/062 Primary

  Devices having a multilayer structure · CPC title

• G03F7/70075

  Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection · CPC title

• G03F7/70166 Primary

  Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides · CPC title

• G21K2201/067

  Construction details · CPC title

• G02B5/0891

  Ultraviolet [UV] mirrors (apparatus for microlithography exposure G03F7/70; X-ray multilayer structures G21K1/06) · CPC title