Microelectromechanical pressure sensor with robust diaphragm

Patent metadata

Field	Value
Publication number	US-9442032-B2
Application number	US-201414270813-A
Country	US
Kind code	B2
Filing date	May 6, 2014
Priority date	May 10, 2013
Publication date	Sep 13, 2016
Grant date	Sep 13, 2016

Abstract

A microelectromechanical pressure sensor structure wherein the length of the diaphragm is at least three times the width of the diaphragm. The oblong diaphragm experiences a minimized difference between lateral bending of the wafer and of the diaphragm along the width of the diaphragm. In a perpendicular direction, the diaphragm is at least three times longer due to which it accurately aligns with the bending form of the wafer. Due to this, the total error caused by bending of the structure is significantly reduced and a more robust structure is achieved. At the same time, the longer diaphragm provides mode deflected area for detection and thus significantly improves sensitivity of the device.

First claim

The invention claimed is:

1. A microelectromechanical pressure sensor structure that comprises a body structure and a diaphragm plate, wherein
the body structure comprises a planar base and side walls;
a first surface extends along the planar base;
the side walls extend as a circumference away from the planar base;
the diaphragm plate extends on the side walls along a second surface;
the planar base, the side walls and the diaphragm plate are attached to each other such that the first surface, the second surface and inner surfaces of the side walls form a hermetically closed gap in a reference pressure;
a top edge of the inner surfaces of the side walls forms a circumference of a diaphragm that has a length and a width in the direction of the second surface, wherein the length is in a direction of the longest extent of the diaphragm, and the width is in a direction perpendicular the direction of the length in the direction of the second surface; and
the length of the diaphragm is at least three times the width of the diaphragm.

2. A pressure sensor structure of claim 1 , wherein the side walls extend circumferentially away from the planar base to a direction perpendicular to the first surface.

3. A pressure sensor structure of claim 1 , wherein at operation the diaphragm is configured to deflect such that a point in a position in the second surface is moved towards the first surface in a direction perpendicular to the first surface.

4. A pressure sensor structure of claim 1 , wherein the length of the diaphragm is at least five times the width of the diaphragm.

5. A pressure sensor structure of claim 1 , wherein one or more cavities that extend from the first surface into the planar base.

6. A pressure sensor structure of claim 5 , wherein the one or more cavities form a string.

7. A pressure sensor structure of claim 6 , wherein the string is parallel to at least a part of an inner surface of the side walls.

8. A pressure sensor structure of claim 6 , wherein the string comprises at least one elongate cavity, the length of the cavity being at least two times the mean width of the cavity.

9. A pressure sensor structure of claim 8 , wherein the elongate cavity is linear, forming a line cavity.

10. A pressure sensor structure of claim 9 , wherein part of the circumference of the cavity is aligned with at least a part of an inner surface of the side walls.

11. A pressure sensor structure of claim 7 , wherein the string extends in an end of the longest extent of the diaphragm.

12. A pressure sensor structure of claim 9 , wherein the pressure sensor comprises two line cavities, each of which extends in an opposite end of the longest extent of the diaphragm.

13. A pressure sensor structure of claim 5 , wherein
the string exists in one or more cavity areas on the first surface;
a position in the cavity area corresponds with a position in the second surface when a line connecting the positions is perpendicular to the plane of the first surface;
the diaphragm is configured to have a maximum deflection that corresponds to a largest allowed displacement of the diaphragm at operation;
cavity areas exist in positions where deflection of the diaphragm in a corresponding position is less than the maximum deflection.

14. A pressure sensor structure of claim 13 , wherein cavity areas exist in positions where deflection of the diaphragm in a corresponding position is less than two thirds of the maximum deflection.

15. A pressure sensor structure of claim 1 , wherein
the planar base, the side walls and the diaphragm plate are attached to each other such that the first surface, the second surface and inner surfaces of the side walls form two or more hermetically closed gaps;
top edges of inner surfaces of the side walls form in the second surface circumferences of two or more diaphragms that have a length and a width in the direction of the second surface, wherein the length of a diaphragm is in a direction of the longest extent of the diaphragm, and the width is in a direction perpendicular the direction of the length in the second surface;
the length of each of the diaphragms is at least three times the width of the diaphragm.

16. A pressure sensor structure of claim 1 , wherein the pressure sensor structure comprises a fixed electrode on the first surface and a diaphragm electrode on the second surface for detecting changes in capacitance over the gap.

17. A pressure sensor structure of claim 1 , wherein the planar base and/or the diaphragm are made of electrically conducting material and provide a capacitor structure for detecting changes in capacitance over the gap.

18. A pressure sensor structure of claim 1 , wherein:
the sensor structure has a thickness in a direction perpendicular to the first surface;
outer surface of the sensor structure extends along the direction perpendicular to the first surface of the sensor structure;
width of the side walls corresponds to a shortest distance from the top edge of the inner surfaces of the side walls to the outer surface of the sensor structure;
the thickness of the sensor structure is less than two times the width of the side walls.

19. A pressure sensor, comprising:
a microelectromechanical pressure sensor structure that comprises a body structure and a diaphragm plate, wherein
the body structure comprises a planar base and side wall;
a first surface extends along the planar base;
the side walls extend as a circumference away from the planar base;
the diaphragm plate extends on the side walls along a second surface;
the planar base, the side walls and the diaphragm plate are attached to each other such that the first surface, the second surface and inner surfaces of the side walls form a hermetically closed gap in a reference pressure;
a top edge of the inner surfaces of the side walls forms a circumference of a diaphragm that has a length and a width in the direction of the second surface, wherein the length is in a direction of the longest extent of the diaphragm, and the width is in a direction perpendicular the direction of the length in the direction of the first plane; and
the length of the diaphragm is at least three times the width of the diaphragm.

Assignees

• Murata Manufacturing Co

Inventors

• Kuisma Heikki

Classifications

• B81B2203/0127

  Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function · CPC title

• B81B7/02

  containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] (B81B7/04 takes precedence) · CPC title

• G01L7/082 Primary

  construction or mounting of diaphragms (of semiconductive diaphragms G01L9/0042) · CPC title

• G01L9/0073

  using a semiconductive diaphragm · CPC title

• G01L9/0042

  Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms (details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively) · CPC title