Silicon wafer processing solution and silicon wafer processing method

Patent metadata

Field	Value
Publication number	US-9441179-B2
Application number	US-201414523494-A
Country	US
Kind code	B2
Filing date	Oct 24, 2014
Priority date	Aug 24, 2010
Publication date	Sep 13, 2016
Grant date	Sep 13, 2016

Abstract

A silicon-wafer processing fluid used for processing a silicon wafer contains a friction modifier containing a nitrogen-containing compound, pH of the nitrogen-containing compound being in a range from 2 to 8 when a mass ratio with water (i.e. nitrogen-containing compound/water) is 1/99. The nitrogen-containing compound is preferably a heterocyclic compound. The silicon-wafer processing fluid restrains an abrasion of abrasive grains rigidly attached to a wire and generation of hydrogen.

First claim

The invention claimed is:

1. A silicon-wafer processing method comprising:
slicing a silicon ingot with a wire on which abrasive grains are rigidly attached while supplying a silicon-wafer processing fluid comprising a nitrogen-containing compound to the wire,
wherein a pH of the nitrogen-containing compound in water is from 2 to 8 when a mass ratio of the nitrogen-containing compound/water is 1/99.

2. The silicon-wafer processing method according to claim 1 , wherein the nitrogen-containing compound is a heterocyclic compound.

3. The silicon-wafer processing method according to claim 2 , wherein the heterocyclic compound is at least one selected from the group consisting of benzotriazole, 3,4-dihydro-3-hydroxy-4-oxo-1,2,3-benzotriazine, indazole, benzimidazole and derivatives thereof.

4. The silicon-wafer processing method according to claim 1 , wherein a pH of the silicon-wafer processing fluid is from 3 to 9.

5. The silicon-wafer processing method according to claim 1 , wherein a content of the nitrogen-containing compound in the processing fluid from 0.05 mass % to 10 mass % based on a total amount of the processing fluid.

6. The silicon-wafer processing method according to claim 1 , wherein the silicon-wafer processing fluid comprises water from 50 mass % to 99.95 mass % based on a total amount of the processing fluid.

7. The silicon-wafer processing method according to claim 1 , wherein the silicon-wafer processing fluid comprises water from 60 mass % to 99.95 mass % based on a total amount of the processing fluid.

8. The silicon-wafer processing method according to claim 1 , wherein the nitrogen-containing compound is benzotriazole.

9. The silicon-wafer processing method according to claim 1 , wherein the nitrogen-containing compound is 3,4-dihydro-3-hydroxy-4-oxo-1,2,3-benzotriazine.

10. The silicon-wafer processing method according to claim 1 , wherein the nitrogen-containing compound is indazole.

11. The silicon-wafer processing method according to claim 1 , wherein the nitrogen-containing compound is benzimidazole.

Assignees

• Idemitsu Kosan Co

Inventors

• Kitamura Tomohiko

Classifications

• H10P90/129

  by polishing · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• C10N2030/06

  Oiliness; Film-strength; Anti-wear; Resistance to extreme pressure · CPC title

• C10N2040/00

  Specified use or application for which the lubricating composition is intended · CPC title