Power module

Patent metadata

Field	Value
Publication number	US-9439332-B2
Application number	US-201214237975-A
Country	US
Kind code	B2
Filing date	Aug 9, 2012
Priority date	Sep 26, 2011
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

A power module includes a sealed body in which a semiconductor chip-mounted conductor plate is sealed by a resin in such a manner that a heat dissipating surface of the conductor plate is exposed, a heat dissipating member that is arranged to face the heat dissipating surface, and an insulation layer that is arranged between the sealed body and the heat dissipating member. The insulation layer has a laminated body that is made by laminating an impregnation resin-impregnated ceramic thermal spray film and a bonding resin layer in which a filler having good thermal conductivity is mixed, and that is provided to be in contact with the heat dissipating member and at least the entirety of the heat dissipating surface, and a stress relief resin portion that is provided in a gap between the heat dissipating member and the sealed body to cover an entire circumferential end portion of the laminated body.

First claim

The invention claimed is:

1. A power module comprising:
a sealed body in which a semiconductor chip-mounted conductor plate is sealed by a resin in such a manner that a heat dissipating surface of the conductor plate is exposed;
a heat dissipating member that is arranged to face the heat dissipating surface; and
an insulation layer that is arranged between the sealed body and the heat dissipating member,
wherein the insulation layer has
a laminated body that is made by laminating a ceramic thermal spray film, which is impregnated with an impregnation resin, and a bonding resin layer in which a filler having good thermal conductivity is mixed, and that is provided to be in contact with the heat dissipating member and at least the entirety of the heat dissipating surface, and
a stress relief resin portion that is provided in a gap between the heat dissipating member and the sealed body to cover an entire circumferential end portion of the laminated body.

2. The power module according to claim 1 , wherein
a concave portion is formed in a surface that is positioned on an outer circumferential side of the laminated body in at least one of the sealed body and the heat dissipating member, and
the concave portion is filled with a part of a resin that configures the stress relief resin portion.

3. The power module according to claim 1 ,
wherein an annular convex portion that surrounds the stress relief resin portion is formed in a surface of the sealed body or the heat dissipating member which the ceramic thermal spray film faces.

4. The power module according to claim 1 ,
wherein a circumferential edge of the ceramic thermal spray film is set to have a thickness smaller than a thickness in an area farther inside than the circumferential edge in such a manner that a clearance between the heat dissipating member and the sealed body in a circumferential edge position of the ceramic thermal spray film is greater than a clearance in the area farther inside than the circumferential edge of the ceramic thermal spray film.

5. The power module according to claim 1 ,
wherein a step is formed in a surface of the sealed body or the heat dissipating member, with which the circumferential edge of the ceramic thermal spray film is in contact, in such a manner that the clearance between the heat dissipating member and the sealed body in the circumferential edge position of the ceramic thermal spray film is greater than the clearance in the area farther inside than the circumferential edge of the ceramic thermal spray film.

6. The power module according to claim 1 ,
wherein an elastic modulus of a resin used in the stress relief resin portion is smaller than an elastic modulus of a resin used in the bonding resin layer.

7. The power module according to claim 1 ,
wherein a filler is mixed in the stress relief resin portion at a fill factor lower than the fill factor of the bonding resin layer.

8. The power module according to claim 1 ,
wherein the resin used in the bonding resin layer has a glass transition temperature greater than a glass transition temperature of the resin used in the stress relief resin portion.

9. The power module according to claim 1 ,
wherein the resin used in the bonding resin layer is a thermoplastic resin, and the resin used in the stress relief resin portion is a thermosetting resin.

10. The power module according to claim 1 , wherein
a void formed in the ceramic thermal spray film has a size greater than the size of a front-surface concave portion thereof, and
the filler mixed in the bonding resin layer has a size smaller than the size of the front-surface concave portion, and greater than the size of the void.

11. The power module according to claim 1 ,
wherein when the heat dissipating member has a coefficient of thermal expansion greater than a coefficient of thermal expansion of the conductor plate, the laminated body is configured in such a manner that the heat dissipating member has a coefficient of thermal expansion greater than the coefficient of thermal expansion of the conductor plate, and in contrast, when the conductor plate has a coefficient of thermal expansion greater than the coefficient of thermal expansion of the heat dissipating member, the laminated body is configured in such a manner that the conductor plate has a coefficient of thermal expansion greater than the coefficient of thermal expansion of the heat dissipating member.

12. The power module according to claim 1 , wherein
the semiconductor chip has electrodes on both front and back surfaces thereof,
the conductor plate includes a front surface-side conductor plate that is joined to a side of the front surface of the chip, and a back surface-side conductor plate that is joined to a side of the back surface of the chip,
the heat dissipation member is a module case that accommodates the sealed body in which the semiconductor chip, the front surface-side conductor plate, and the back surface-side conductor plate are sealed by a resin, and the heat dissipation member has a first heat dissipating wall that faces the front surface-side conductor plate, a second heat dissipating wall that faces the back surface-side conductor plate and a thin-walled plastically deformable portion that is formed in the circumference of the first and the second heat dissipating walls, and
the insulation layer includes a first insulation layer that is arranged between the front surface-side conductor plate and the first heat dissipating wall, and a second insulation layer that is arranged between the back surface-side conductor plate and the second heat dissipating wall.

13. The power module according to claim 1 , wherein
the semiconductor chip has electrodes on both front and back surfaces thereof,
the conductor plate includes a front surface-side conductor plate that is joined to a side of the front surface of the chip, and a back surface-side conductor plate that is joined to a side of the back surface of the chip,
the heat dissipation member has a first heat dissipating wall that faces the front surface-side conductor plate, and a second heat dissipating wall that faces the back surface-side conductor plate, and
the insulation layer includes a first insulation layer that is arranged between the front surface-side conductor plate and the first heat dissipating wall, and a second insulation layer that is arranged between the back surface-side conductor plate and the second heat dissipating wall.

Assignees

• Ide Eiichi
• Nishioka Eiji
• Ishii Toshiaki
• Kusukawa Junpei
• Nakatsu Kinya
• Suwa Tokihito
• Hitachi Automotive Systems Ltd

Inventors

• Ide Eiichi
• Nishioka Eiji
• Ishii Toshiaki
• Kusukawa Junpei
• Nakatsu Kinya
• Suwa Tokihito

Classifications

• H10W90/763

  between laterally-adjacent chips · CPC title

• H10W90/759

  between a chip and a laterally-adjacent discrete passive device · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/753

  between laterally-adjacent chips · CPC title