Radio frequency power amplifier circuit

Patent metadata

Field	Value
Publication number	US-9438191-B2
Application number	US-201414514556-A
Country	US
Kind code	B2
Filing date	Oct 15, 2014
Priority date	May 15, 2014
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

An RF power amplifier circuit has an input terminal for receiving an input signal having an input power, and an output terminal for outputting an output signal. The RF power amplifier circuit comprises three amplifier stages and an input power splitter for providing respective power fraction signals to respective inputs of each amplifier stage. The input power splitter comprises a first input transmission line arranged between a first node and a second node, a second input transmission line arranged between a third node and a fourth node, and an electrical reactive element having a first terminal electrically connected to both the first and the second nodes, and a second terminal electrically coupled to a third one of the respective three inputs.

First claim

The invention claimed is:

1. A radio frequency power amplifier circuit having an input terminal for receiving an input signal having an input power, and an output terminal for outputting an output signal having an output power larger than the input power, the radio frequency power amplifier circuit comprising:
a first amplifier stage having a first input and a first output, a second amplifier stage having a second input and a second output, and a third amplifier stage having a third input and a third output, the respective first input, second input and third input being arranged to receive respective power fraction signals having respective power fractions of the input power, and the respective first output, second output and third output being electrically coupled to the output terminal for outputting respective output signals, and,
an input power splitter for providing the respective power fraction signals having the respective power fractions of the input power to the first, second and third inputs, the input power splitter comprising:
a splitter input terminal electrically connected to the input terminal for receiving the input signal from the input terminal,
a first input transmission line arranged between a first node and a second node and a second input transmission line arranged between a third node and a fourth node, and
an electrical reactive element having a first terminal electrically connected to both the second node and to the third node, and having a second terminal electrically coupled to the third input,

the first node and the fourth node being electrically coupled to the first input and the second input, respectively, and the splitter input terminal being electrically coupled to the first terminal.

2. A radio frequency amplifier circuit as claimed in claim 1 , the first amplifier stage, the second amplifier stage and the third amplifier stage being arranged in respective areas of a supporting means, and the third amplifier stage being located between the first amplifier stage and the second amplifier stage.

3. A radio frequency amplifier circuit as claimed in claim 1 , the first amplifier stage, the second amplifier stage and the third amplifier stage being integrated in a power amplifier package having at least a first input lead electrically coupled to the first input, a second input lead electrically coupled to the second input and a third input lead electrically coupled to the third input, and the input power splitter being arranged outside the power amplifier package.

4. A radio frequency power amplifier circuit as claimed in claim 1 , the first amplifier stage comprising a first power transistor having a first area, the second amplifier stage comprising a second power transistor having a second area substantially equal to the first area.

5. A radio frequency power amplifier circuit as claimed in claim 4 , the first power transistor being one of the group of transistors consisting of: a field effect transistor, a high electron mobility transistor, a bipolar transistor, and a heterojunction bipolar transistor being manufactured in one of the group of semiconductor technologies consisting of: silicon, gallium arsenide, gallium nitride, lateral diffused metal oxide semiconductor, metal oxide semiconductor, silicon on carbide and silicon on insulator and a combination thereof.

6. A radio frequency power amplifier circuit as claimed in claim 1 , the first input transmission line has a first input electrical length and the second input transmission line having a second input electrical length substantially equivalent to the first input electrical length.

7. A radio frequency power amplifier circuit as claimed in claim 1 , further comprising an output power combiner for combining said respective output signals into the output signal at the output terminal, the output power combiner comprising:
a first output transmission line arranged between a first output node and a second output node, and
a second output transmission line arranged between a third output node and a fourth output node,
the first output node being electrically coupled to the respective first output, the fourth output node being electrically coupled to the respective second output, and both second output node and third output node being both electrically coupled to the third output.

8. A radio frequency power amplifier circuit as claimed in claim 7 , the first output transmission line having a first output electrical length and the second output transmission line having a second output electrical length substantially equivalent to the first output electrical length.

9. A radio frequency power amplifier circuit as claimed in claim 7 , wherein the output power combiner further comprising a third output transmission line arranged between the third output and a fifth output node, the fifth output node being electrically connected to both the second output node and the third output node, and to the output terminal.

10. A radio frequency power amplifier circuit according to claim 7 , the first output transmission line being formed by a first network comprising a first series inductor, a first shunt capacitor and a second series inductor, and the second output transmission line being formed by a second network comprising a third series inductor, a second shunt capacitor, and a fourth series inductor, the first network and the second network being electrically connected in series at both the second output node and third output node.

11. A radio frequency power amplifier circuit as claimed in claim 1 , the electrical reactive element having a predetermined value for:
inputting a first power fraction signal to the first input of the first amplifier stage, the first power fraction signal having a first power fraction of the input power, and a second power fraction signal to the second input of the second amplifier stage, the second power fraction signal having a second power fraction equal to the first power fraction, and
inputting a third power fraction signal to the third input of the third amplifier stage, the third power fraction signal having a third power fraction of the input power.

12. A radio frequency power amplifier circuit as claimed in claim 11 , and capable for being operated as a radio frequency Doherty amplifier, the first amplifier stage and the second amplifier stage being a peak amplifier stage, the third amplifier stage being a main amplifier stage, and the first power fraction being higher than the third power fraction.

13. A radio frequency power amplifier circuit as claimed in claim 11 , and capable for being operated as a class AB radio frequency power amplifier, the first power fraction being equivalent to the third power fraction.

14. A radio frequency base station for mobile communications, comprising:
a transmitter comprising the radio frequency power amplifier circuit as claimed in claim 1 , and
an antenna electrically coupled to the output terminal of the radio frequency amplifier circuit for transmitting the output signal through a communication channel.

15. A communications system comprising a radio frequency base station according to claim 14 and one or more mobile devices, the radio frequency base station being arranged to provide wireless transmission to one or more of the mobile devices.

16. The radio frequency power amplifier circuit as claimed in claim 1 , wherein the electrical reactive element has an electrical reactive element value configured to provide a third respective power fraction of the respective power fractions to the third input, wherein the third respective power fraction

Assignees

• Blednov Igor Ivanovich
• Freescale Semiconductor Inc

Inventors

• Blednov Igor Ivanovich

Classifications

• H10W72/5475

  multiple bond wires connected to common bond pads at both ends of the wires · CPC title

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title

• H03F3/19

  with semiconductor devices only · CPC title

• H03F1/0288

  using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers · CPC title

• H04B1/04

  Circuits · CPC title