Semiconductor device

Patent metadata

Field	Value
Publication number	US-9438032-B2
Application number	US-201414470223-A
Country	US
Kind code	B2
Filing date	Aug 27, 2014
Priority date	Oct 17, 2013
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

The semiconductor device includes a power chip including a switching element that switches a supply of power from a power supply to a load between an on-state and an off-state, a control chip in which is incorporated a control circuit that controls the switching element of the power chip, and a reverse connection protection circuit, provided in the control chip, that controls the switching element of the power chip into an on-state when the power supply is reverse-connected, wherein the reverse connection protection circuit has protective resistors, interposed between the control circuit and the positive electrode side of the power supply, and a control voltage formation circuit into which is input an intermediate voltage of the protective resistors and which forms a control voltage that controls the switching element of the power chip into an on-state when the power supply is reverse-connected.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a power chip including a switching element that switches a supply of power from a power supply to a load between an on-state and an off-state;
a control chip in which is incorporated a control circuit that controls the switching element of the power chip; and
a reverse connection protection circuit, provided in the control chip, that controls the switching element of the power chip into an on-state when the power supply is reverse-connected, wherein
the reverse connection protection circuit has protective resistors, interposed between the control circuit and the positive electrode side of the power supply, and a control voltage formation circuit into which is input an intermediate voltage of the protective resistors and which forms a control voltage that controls the switching element of the power chip into an on-state when the power supply is reverse-connected, and
the protective resistors are of a configuration wherein the control circuit side is connected to the control chip substrate, and a substrate potential is provided.

2. The semiconductor device according to claim 1 , wherein the control voltage formation circuit having a voltage control semiconductor element into the input side terminal of which is the substrate potential formed by the protective resistors, and intermediate voltage of the voltage divider resistors is supplied to the gate terminal of the voltage control semiconductor element.

3. The semiconductor device according to claim 2 , wherein the control voltage formation circuit is such that a reverse blocking diode is connected in series with the voltage control semiconductor element.

4. The semiconductor device according to claim 2 , wherein the control voltage formation circuit is such that a second voltage control semiconductor element of a channel differing from that of the voltage control semiconductor element is connected in series with the voltage control semiconductor element.

5. The semiconductor device according to claim 4 , wherein the second voltage control semiconductor element is such that the gate terminal and input side terminal are short-circuited, and the back gate terminal is connected to the output terminal side of a third voltage control semiconductor element whose switching is controlled by a control signal.

6. The semiconductor device according to claim 2 , wherein the reverse connection protection circuit has a charge pump circuit into which is input control voltage output from the voltage control semiconductor element of the control voltage formation circuit, and the output of the charge pump circuit is supplied to the power chip.

Assignees

• Fuji Electric Co Ltd

Inventors

• Iwamizu Morio

Classifications

• H02H11/002

  in case of inverted polarity or connection; with switching for obtaining correct connection · CPC title

• H02H9/025 Primary

  Current limitation using field effect transistors · CPC title

• H02H7/205 Primary

  for controlled semi-conductors which are not included in a specific circuit arrangement · CPC title