Electrode mesh galvanic cells

Patent metadata

Field	Value
Publication number	US-9437906-B2
Application number	US-201414245611-A
Country	US
Kind code	B2
Filing date	Apr 4, 2014
Priority date	Aug 29, 2005
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

The present invention is directed to the fabrication of thin aluminum anode batteries using a highly reproducible process that enables high volume manufacturing of the galvanic cells. A thin aluminum anode galvanic cell having a meshed structure is provided which includes a catalytic metal layer positioned on a patterned silicon substrate, an etched dielectric layer positioned to cover the catalytic metal layer, the catalytic metal layer serving as an etch stop for the etched dielectric layer and an etched aluminum layer positioned to cover the dielectric layer, the dielectric layer serving as an etch stop for the etched aluminum layer.

First claim

What is claimed is:

1. A thin aluminum anode galvanic cell on a silicon wafer, the cell comprising:
a catalytic metal layer positioned on a patterned silicon substrate;
an etched dielectric layer positioned to cover the catalytic metal layer, the catalytic metal layer serving as an etch stop for the etched dielectric layer; and
an etched aluminum layer positioned to cover the dielectric layer, the dielectric layer serving as an etch stop for the etched aluminum layer.

2. The galvanic cell of claim 1 , further comprising an adhesive layer positioned between the patterned silicon substrate and the catalytic metal layer.

3. The galvanic cell of claim 2 , wherein the adhesive layer is selected from the group consisting of titanium nitride, silicon nitride and aluminum nitride.

4. The galvanic cell of claim 2 , wherein the adhesive layer is a layer of titanium nitride that is about 10 nm thick.

5. The galvanic cell of claim 1 , wherein the catalytic metal layer is selected from the group consisting of silver, platinum, nickel and copper.

6. The galvanic cell of claim 1 , wherein the catalytic metal layer is layer of platinum that is about 100 nm thick.

7. The galvanic cell of claim 1 , wherein the dielectric layer is a silicon dioxide layer.

8. The galvanic cell of claim 1 , wherein the dielectric layer is a silicon nitride layer.

9. The galvanic cell of claim 1 , wherein the aluminum layer is about 300 nm thick.

Assignees

• Cardenas-Valencia Andres M
• Dlutowski Jay
• Calves Melynda C
• Bumgarner John
• Langebrake Larry
• Univ South Florida

Inventors

• Cardenas-Valencia Andres M
• Dlutowski Jay
• Calves Melynda C
• Bumgarner John
• Langebrake Larry

Classifications

• H01M4/0426 Primary

  Sputtering · CPC title

• H01M12/065

  with plate-like electrodes or stacks of plate-like electrodes · CPC title

• H01M4/134

  Electrodes based on metals, Si or alloys · CPC title

• H01M6/40

  Printed batteries {, e.g. thin film batteries} · CPC title

• H01M4/0492

  Chemical attack of the support material · CPC title