Oxidation process for interconnects and end plates

US9437879B1 · US · B1

Patent metadata
FieldValue
Publication numberUS-9437879-B1
Application numberUS-201313969787-A
CountryUS
Kind codeB1
Filing dateAug 19, 2013
Priority dateSep 12, 2012
Publication dateSep 6, 2016
Grant dateSep 6, 2016

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Abstract

Official abstract text for this publication.

Methods and systems for oxidizing an interconnect for a fuel cell stack include introducing at least one interconnect to an oxidizing gas containing water vapor, the oxidizing gas being at least substantially free of nitrogen, and oxidizing the at least one interconnect in the presence of the oxidizing gas at an elevated temperature. The oxidation may be performed at a sub-atmospheric pressure. The oxidation of the interconnect may be a controlled oxidation that is performed prior to incorporating the interconnect into a fuel cell stack.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for oxidizing metal interconnect for a fuel cell stack, comprising: introducing at least one metal interconnect to an oxidizing gas comprising water vapor, the oxidizing gas being at least substantially free of nitrogen; and oxidizing the at least one metal interconnect in the presence of the oxidizing gas at elevated temperature, wherein the oxidation is performed at a sub-atmospheric pressure that is between about 100 and about 700 Torr, and incorporating the at least one metal interconnect into a solid oxide fuel cell stack following the step of oxidizing. 2. The method of claim 1 , wherein the oxidizing gas comprises water vapor and a carrier gas for conveying the water vapor to the at least one metal interconnect. 3. The method of claim 2 , wherein the carrier gas comprises at least one of argon, helium, neon, an inert gas and a non-nitrogen containing gas. 4. The method of claim 2 , further comprising: bubbling the carrier gas through a water source to produce the oxidizing gas comprising water vapor. 5. The method of claim 1 , wherein the oxidation is performed at a peak temperature of between about 800° C. and about 1300° C. 6. The method of claim 5 , wherein the oxidation is performed at a peak temperature of between about 850° C. and about 1200° C. 7. The method of claim 1 , wherein the oxidation is performed for between about 12 and about 72 hours. 8. The method of claim 1 , wherein the oxidation is performed in a nitrogen-free environment to inhibit nitride formation on the at least one metal interconnect. 9. The method of claim 1 , wherein a plurality of metal interconnects are simultaneously oxidized. 10. The method of claim 9 , further comprising: stacking the plurality of metal interconnects into at least one column; positioning the at least one column into a container; and providing the oxidizing gas into the interior of the container to introduce the oxidizing gas to the metal interconnects. 11. The method of claim 10 , wherein the oxidizing gas is provided into the interior of the container using a gas distribution manifold. 12. The method of claim 10 , further comprising: loading the container into a vacuum furnace after the step of positioning; and raising a temperature in the vacuum furnace above 800° C. to oxidize the at least one metal interconnect during or after the step of providing. 13. The method of claim 9 , further comprising: hanging the interconnects in a processing chamber such that the metal interconnects are exposed to the oxidizing gas. 14. A method for oxidizing metal for a fuel cell stack, comprising: introducing at least one metal interconnect to an oxidizing gas comprising water vapor, the oxidizing gas being at least substantially free of nitrogen; and oxidizing the at least one metal interconnect in the presence of the oxidizing gas at elevated temperature at a sub-atmospheric pressure that is between about 100 and about 700 Torr, wherein the oxidation is performed in a processing chamber, the method further comprising: evacuating the processing chamber to remove nitrogen from the chamber prior to oxidizing the at least one interconnect, and incorporating the at least one metal interconnect into a solid oxide fuel cell stack following the step of oxidizing. 15. The method of claim 14 , wherein the processing chamber is evacuated to a pressure that is less than about 0.1 Torr. 16. The method of claim 14 , further comprising: performing at least one pump purge cycle to remove trace nitrogen. 17. The method of claim 14 , further comprising: following the evacuation, filling the processing chamber with the oxidizing gas to introduce the at least one metal interconnect to the oxidizing gas. 18. A method for oxidizing metal interconnect for a fuel cell stack, comprising: introducing at least one metal interconnect to an oxidizing gas comprising water vapor, the oxidizing gas being at least substantially free of nitrogen; and oxidizing the at least one metal interconnect in the presence of the oxidizing gas at elevated temperature at a sub-atmospheric pressure that is between about 100 and about 700 Torr, and incorporating the at least one metal interconnect into a solid oxide fuel cell stack following the step of oxidizing, wherein: the at least one metal interconnect comprises a chromium-iron alloy comprising 4-6 wt % iron and 94-96 wt % chromium; the at least one metal interconnect is made by powder metallurgy and sintering; and the step of oxidizing is performed for a period sufficient to at least partially fill pores in the at least one metal interconnect with oxide material.

Assignees

Inventors

Classifications

  • H01M8/0202Primary

    Collectors; Separators, e.g. bipolar separators; Interconnectors · CPC title

  • Fuel cells · CPC title

  • Glass; Ceramic materials · CPC title

  • H01M8/021Primary

    Alloys based on iron · CPC title

  • Composites · CPC title

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What does patent US9437879B1 cover?
Methods and systems for oxidizing an interconnect for a fuel cell stack include introducing at least one interconnect to an oxidizing gas containing water vapor, the oxidizing gas being at least substantially free of nitrogen, and oxidizing the at least one interconnect in the presence of the oxidizing gas at an elevated temperature. The oxidation may be performed at a sub-atmospheric pressure.…
Who is the assignee on this patent?
Bloom Energy Corp
What technology area does this patent fall under?
Primary CPC classification H01M8/0202. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 06 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).