Piezoelectric thin film element

Patent metadata

Field	Value
Publication number	US-9437805-B2
Application number	US-201314053902-A
Country	US
Kind code	B2
Filing date	Oct 15, 2013
Priority date	Apr 15, 2011
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

A piezoelectric thin film element that includes a substrate, a lower electrode on the substrate, a piezoelectric film on the lower electrode, and an upper electrode on the piezoelectric film. The piezoelectric film is a potassium sodium niobate film represented, as its main constituent, by the general formula (1−n)(K 1-x Na x )Nb y O 3 -nM1M2O 3 in which M1 is any one of Ca, Sr, and Ba, and M2 is Zr, and x, y, and n respectively are within the ranges of: 0.25≦x≦1.00; 0.85≦y≦1.10; and 0.01≦n≦0.10. Alternatively, M2 is any one of Sn and Hf, and x, y, and n respectively are within the ranges of: 0.25≦x≦1.00; 0.90≦y≦1.05; and 0.01≦n≦0.10.

First claim

The invention claimed is:

1. A piezoelectric thin film element comprising:
an electrode; and
a piezoelectric film adjacent the electrode,
wherein the piezoelectric film is a potassium sodium niobate film containing the general formula (1−n)(K 1-x Na x )Nb y O 3 -nBaZrO 3 as its main constituent, and x, y, and n respectively are within the ranges of: 0.25≦x≦0.75; 0.85≦y≦1.10; and 0.01≦n≦0.10.

2. The piezoelectric thin film element according to claim 1 , further comprising a substrate adjacent the electrode.

3. The piezoelectric thin film element according to claim 2 , wherein the substrate is one of a silicon substrate, a glass substrate, a quartz glass substrate, a GaAs substrate, a GaN substrate, a CaF 2 substrate, a sapphire substrate, an MgO substrate, an SrTiO 3 substrate, an LaAlO 3 substrate, and a stainless-steel substrate.

4. The piezoelectric thin film element according to claim 1 , wherein the piezoelectric film has a thickness of 300 nm.

5. A piezoelectric thin film element comprising:
an electrode; and
a piezoelectric film adjacent the electrode,
wherein the piezoelectric film is a potassium sodium niobate film containing the general formula (1−n)(K 1-x Na x )Nb y O 3 -nBaSnO 3 as its main constituent, and x, y, and n respectively are within the ranges of: 0.25≦x≦0.75; 0.90≦y≦1.05; and 0.01≦n≦0.10.

6. The piezoelectric thin film element according to claim 5 , further comprising a substrate adjacent the electrode.

7. The piezoelectric thin film element according to claim 6 , wherein the substrate is one of a silicon substrate, a glass substrate, a quartz glass substrate, a GaAs substrate, a GaN substrate, a CaF 2 substrate, a sapphire substrate, an MgO substrate, an SrTiO 3 substrate, an LaAlO 3 substrate, and a stainless-steel substrate.

8. The piezoelectric thin film element according to claim 5 , wherein the piezoelectric film has a thickness of 300 nm.

9. A piezoelectric thin film element comprising:
an electrode; and
a piezoelectric film adjacent the electrode,
wherein the piezoelectric film is a potassium sodium niobate film represented, as its main constituent, by the general formula (1−n)(K 1-x Na x ) Nb y O 3 -nM1M2O 3 in which M1 is any one of Ca, Sr, and Ba, M2 is Zr, and x, y, and n respectively are within the ranges of: 0.25≦x≦1.00; 0.85≦y≦1.10; and 0.01≦n≦0.10.

10. The piezoelectric thin film element according to claim 9 , wherein x is within the range of 0.80≦x≦1.00.

11. The piezoelectric thin film element according to claim 9 , further comprising a substrate adjacent the electrode.

12. The piezoelectric thin film element according to claim 11 , wherein the substrate is one of a silicon substrate, a glass substrate, a quartz glass substrate, a GaAs substrate, a GaN substrate, a CaF 2 substrate, a sapphire substrate, an MgO substrate, an SrTiO 3 substrate, an LaAlO 3 substrate, and a stainless-steel substrate.

13. The piezoelectric thin film element according to claim 9 , wherein the piezoelectric film has a thickness of 300 nm.

14. A piezoelectric thin film element comprising:
an electrode; and
a piezoelectric film adjacent the electrode,
wherein the piezoelectric film is a potassium sodium niobate film represented, as its main constituent, by the general formula (1−n)(K 1-x Na x ) Nb y O 3 -nM1M2O 3 in which M1 is any one of Ca, Sr, and Ba, M2 is any one of Sn and Hf, and x, y, and n respectively are within the ranges of: 0.25≦x≦1.00; 0.90≦y≦1.05; and 0.01≦n≦0.10.

15. The piezoelectric thin film element according to claim 14 , wherein x is within the range of 0.80≦x≦1.00.

16. The piezoelectric thin film element according to claim 14 , further comprising a substrate adjacent the electrode.

17. The piezoelectric thin film element according to claim 16 , wherein the substrate is one of a silicon substrate, a glass substrate, a quartz glass substrate, a GaAs substrate, a GaN substrate, a CaF 2 substrate, a sapphire substrate, an MgO substrate, an SrTiO 3 substrate, an LaAlO 3 substrate, and a stainless-steel substrate.

18. The piezoelectric thin film element according to claim 14 , wherein the piezoelectric film has a thickness of 300 nm.

Assignees

• Murata Manufacturing Co

Inventors

• Shiraki Hiroshi

Classifications

• H01L41/317

  Electricity · mapped topic

• C04B2235/3215

  Barium oxides or oxide-forming salts thereof · CPC title

• C04B2235/3251

  Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof · CPC title

• C04B2235/6562

  Heating rate · CPC title

• C04B2235/3293

  Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO] · CPC title