Rare earth-doped materials with enhanced thermoelectric figure of merit

Patent metadata

Field	Value
Publication number	US-9437796-B2
Application number	US-201213725156-A
Country	US
Kind code	B2
Filing date	Dec 21, 2012
Priority date	Sep 16, 2010
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

A thermoelectric material and a thermoelectric converter using this material. The thermoelectric material has a first component including a semiconductor material and a second component including a rare earth material included in the first component to thereby increase a figure of merit of a composite of the semiconductor material and the rare earth material relative to a figure of merit of the semiconductor material. The thermoelectric converter has a p-type thermoelectric material and a n-type thermoelectric material. At least one of the p-type thermoelectric material and the n-type thermoelectric material includes a rare earth material in at least one of the p-type thermoelectric material or the n-type thermoelectric material.

First claim

The invention claimed is:

1. A thermoelectric material comprising:
a first component including a semiconductor material; and
a second component including rare earth material magnetic precipitates included in the first component; and
said first component and said second component having respectively diamagnetic and paramagnetic magnetic susceptibilities to thereby increase a figure of merit of a composite of the semiconductor thermoelectric material and the rare earth material precipitates elative to a figure of merit of the semiconductor material.

2. The thermoelectric material of claim 1 , wherein
the semiconductor material comprises a GeTe alloy, and
said GeTe alloy includes the rare earth material precipitates.

3. The thermoelectric material of claim 2 , where the rare earth material precipitates includes at least one of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or an alloy thereof.

4. The thermoelectric material of claim 2 , where the rare earth material precipitates comprises a concentration of 0.1% to 25%.

5. The thermoelectric material of claim 2 , where the GeTe alloy includes at least one of Ag and Sb.

6. The thermoelectric material of Claim 2 , where the GeTe alloy comprises (GeTe) y (AgSbTe 2 ) 1-y .

7. The thermoelectric material of claim 2 , where the GeTe alloy comprises Ag 6.52 Sb 6.52 Ge 36.96 Te 49.00 Ce 1.00 .

8. The thermoelectric material of claim 2 , where the GeTe alloy comprises Ag 6.52 Sb 6.52 Ge 36.96 Te 49.00 Yb 1.00 .

9. The thermoelectric material of claim 2 , where the GeTe alloy comprises Ag 6.52 Sb 6.52 Ge 36.96 Te 49.00 Gd 1.00 .

10. The thermoelectric material of claim 1 , wherein
the semiconductor material comprises a PbTe alloy, and
said PbTe alloy includes the rare earth material precipitates.

11. The thermoelectric material of claim 10 , where the rare earth material precipitates includes at least one of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or an alloy thereof.

12. The thermoelectric material of claim 10 , where the rare earth material precipitates comprises a concentration of 0.1% to 25%.

13. The thermoelectric material of claim 10 , where the PbTe alloy includes at least one of Ag and Sb.

14. The thermoelectric material of claim 10 , where the PbTe alloy comprises (PbTe) y (AgSbTe 2 ) 1-y .

15. The thermoelectric material of claim 10 , where the PbTe alloy comprises Ag 6.52 Sb 6.52 Pb 36.96 Te 49.00 Ce 1.00 .

16. The thermoelectric material of claim 10 , where the PbTe alloy comprises Ag 6.52 Sb 6.52 Pb 36.96 Te 49.00 Yb 1.00 .

17. The thermoelectric material of claim 10 , where the PbTe alloy comprises Ag 6.52 Sb 6.52 Pb 36.96 Te 49.00 Gd 1.00 .

18. A thermoelectric converter comprising the thermoelectric material of claim 1 including:
a p-type thermoelectric material and a n-type thermoelectric material,
at least one of the p-type thermoelectric material and the n-type thermoelectric material including a rare earth material in at least one of the p-type thermoelectric material or the n-type thermoelectric material.

19. The converter of claim 18 , wherein the rare earth material scatters electrical carriers in at least one of the p-type thermoelectric material or the n-type thermoelectric material.

20. The converter of claim 18 , wherein at least one of the p-type thermoelectric material and the n-type thermoelectric material comprises a GeTe alloy.

21. The converter of claim 18 , wherein at least one of the p-type thermoelectric material and the n-type thermoelectric material comprises a PbTe alloy.

22. The converter of claim 18 , wherein the p-type thermoelectric material and the n-type thermoelectric material operate as thermoelectrics in a temperature range of 300K to 1300K.

23. The converter of claim 18 , wherein the p-type thermoelectric material and the n-type thermoelectric material operate as thermoelectrics in a temperature range of 100K to 300K.

24. The converter of claim 18 , wherein the rare earth material and nanostructured elements in at least one of the p-type thermoelectric material or the n-type thermoelectric material reduce a lattice thermal conductivity of at least one of the p-type thermoelectric material or the n-type thermoelectric material by phonon scattering in the p-type thermoelectric material or the n-type thermoelectric material.

25. The converter of claim 18 , wherein the rare earth material produces scattering of electrical carriers in at least one of the p-type thermoelectric material or the n-type thermoelectric material and increases a density of states for the carriers by quantum confinement.

26. The converter of claim 18 , wherein the rare earth material produces scattering of electrical carriers in at least one of the p-type thermoelectric material or the n-type thermoelectric material to provide resonant states for the carriers in the p-type thermoelectric material or the n-type thermoelectric material to increase a Seebeck coefficient of the p-type thermoelectric material or the n-type thermoelectric material.

27. The converter of claim 18 , wherein the rare earth material and nanostructured elements in at least one of the p-type thermoelectric material or the n-type thermoelectric material reduce to reduce at least one of lattice thermal conductivity, quantum confinement, and resonant states in the p-type thermoelectric material or the n-type thermoelectric material.

28. A method for enhancing a ZT figure of merit in a semiconductor material, comprising:
providing in the semiconductor material rare earth material precipitates which scatters electrical carriers in the semiconductor material, said semiconductor material with the rare earth material precipitates having diamagnetic and paramagnetic magnetic susceptibilities.

29. The method of claim 28 , wherein providing comprises:
providing at least one of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or an alloy thereof as the rare earth material precipitates.

Assignees

• Res Triangle Inst
• Us Dept Energy

Inventors

• Venkatasubramanian Rama
• Cook Bruce Allen
• Levin Evgenii M
• Harringa Joel Lee

Classifications

• C22C28/00

  Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00 · CPC title

• H01L35/16 Primary

  Electricity · mapped topic

• C22C1/02 Primary

  by melting {(C22C1/1036 takes precedence)} · CPC title

• H01F1/401

  diluted · CPC title

• H10N10/852 Primary

  comprising tellurium, selenium or sulfur · CPC title