Light-emitting device
US-9006761-B2 · Apr 14, 2015 · US
US9437787B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9437787-B2 |
| Application number | US-201314361216-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 29, 2013 |
| Priority date | Jun 18, 2012 |
| Publication date | Sep 6, 2016 |
| Grant date | Sep 6, 2016 |
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A semiconductor light emitting device includes: a semiconductor light emitting element including a transparent substrate; a reflective substrate on which the semiconductor light emitting element is mounted; an adhesive layer containing a fluorescent substance, for fixing the semiconductor light emitting element on the reflective substrate; and a sealing member containing a fluorescent substance, for sealing the semiconductor light emitting element. In the semiconductor light emitting device, the adhesive layer has a thickness equal to or smaller than average particle size of the fluorescent substance contained in the sealing member.
Opening claim text (preview).
The invention claimed is: 1. A semiconductor light emitting device, comprising: a semiconductor light emitting element including a transparent substrate; a substrate on which said semiconductor light emitting element is mounted; an adhesive layer containing a fluorescent substance, for fixing said semiconductor light emitting element on said substrate; and a sealing member containing a fluorescent substance, for sealing said semiconductor light emitting element; wherein the fluorescent substance contained in the adhesive layer has an average particle diameter smaller than an average particle diameter of the fluorescent substance contained in the sealing member; and said adhesive layer has a thickness equal to or smaller than an average particle diameter of said fluorescent substance contained in said sealing member. 2. The semiconductor light emitting device according to claim 1 , wherein average particle diameter of the fluorescent substance contained in said adhesive layer is at most 200 nm. 3. The semiconductor light emitting device according to claim 2 , wherein average particle diameter of the fluorescent substance contained in said adhesive layer is at most 100 nm. 4. The semiconductor light emitting device according to claim 1 , wherein said substrate has a light reflecting surface; and said semiconductor light emitting element is mounted on said light reflecting surface. 5. The semiconductor light emitting device according to claim 1 , wherein the fluorescent substance contained in said adhesive layer emits fluorescent light having longer emission wavelength than the fluorescent substance contained in said sealing member. 6. The semiconductor light emitting device according to claim 1 , wherein said transparent substrate is any of a sapphire substrate, a nitride-based semiconductor substrate and an SiC substrate. 7. The semiconductor light emitting device according to claim 1 wherein said adhesive layer is formed of silicone resin.
Encapsulations, e.g. protective coatings · CPC title
changes in dispositions · CPC title
comprising gold [Au] · CPC title
the connected ends being wedge-shaped · CPC title
Die-attach connectors and bond wires · CPC title
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