Non-volatile memory device including charge trapping layer and method for fabricating the same

US9437751B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9437751-B2
Application numberUS-201414555040-A
CountryUS
Kind codeB2
Filing dateNov 26, 2014
Priority dateDec 19, 2013
Publication dateSep 6, 2016
Grant dateSep 6, 2016

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Abstract

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A non-volatile memory device includes a charge trapping layer for trapping charges. The charge trapping layer includes a linker layer formed over a substrate and including linkers to be bonded to metal ions metallic nanoparticles formed out of the metal ions over the linker layer and a nitride filling gaps between the metallic nanoparticles.

First claim

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What is claimed is: 1. A method for fabricating a non-volatile memory device, comprising: forming a tunneling layer over a substrate; and forming a charge trapping layer over the tunneling layer, wherein the forming of the charge trapping layer comprises: forming a linker layer, which includes linkers, over the tunneling layer; forming metal ions over the linker layer; forming metallic nanoparticles by growing from the metal ions; and forming a nitride over the metallic…

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What does patent US9437751B2 cover?
A non-volatile memory device includes a charge trapping layer for trapping charges. The charge trapping layer includes a linker layer formed over a substrate and including linkers to be bonded to metal ions metallic nanoparticles formed out of the metal ions over the linker layer and a nitride filling gaps between the metallic nanoparticles.
Who is the assignee on this patent?
Sk Innovation Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10D30/6891. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 06 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).