Semiconductor integrated circuit device
US-9142578-B2 · Sep 22, 2015 · US
Semiconductor integrated circuit device
US9437643B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9437643-B2 |
| Application number | US-201514840707-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 31, 2015 |
| Priority date | Jun 26, 2013 |
| Publication date | Sep 6, 2016 |
| Grant date | Sep 6, 2016 |
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Abstract
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Provided is a semiconductor integrated circuit device having pixel regions in a photodiode array region and having, in each of the pixel regions, a waveguide holding hole having a substantially perpendicular sidewall above the photodiode and embedded with a silicon oxide-based sidewall insulating film reaching the bottom surface of the hole and two or more silicon nitride-based insulating films having a higher refractive index on the inner side of the hole. This structure makes it possible to prevent deterioration of pixel characteristics of an imaging device, such as CMOS sensor, which is rapidly decreasing in size.
First claim
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What is claimed is: 1. A semiconductor integrated circuit device including a CMOS image sensor, comprising: a photodiode formed in a semiconductor substrate and configuring a part of the CMOS image sensor; an interlayer insulating film formed over the photodiode; a waveguide holding hole formed in the interlayer insulating film above the photodiode; a first silicon nitride-based insulating film formed over a side surface and a bottom surface of the waveguide holding hole;…
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Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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- What does patent US9437643B2 cover?
- Provided is a semiconductor integrated circuit device having pixel regions in a photodiode array region and having, in each of the pixel regions, a waveguide holding hole having a substantially perpendicular sidewall above the photodiode and embedded with a silicon oxide-based sidewall insulating film reaching the bottom surface of the hole and two or more silicon nitride-based insulating films…
- Who is the assignee on this patent?
- Renesas Electronics Corp
- What technology area does this patent fall under?
- Primary CPC classification H10F39/806. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 06 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).